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    1K X 4 RAM Search Results

    1K X 4 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NSC810AD/B Rochester Electronics LLC NSC810A - RAM I/O TIMER Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - 16-Word by 4-Bit 2-Port RAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - 16-Word by 4-Bit 2-Port RAM Visit Rochester Electronics LLC Buy
    29705ADM/B Rochester Electronics LLC 29705A - 16-Word by 4-Bit 2-Port RAM Visit Rochester Electronics LLC Buy

    1K X 4 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SH67P33CX

    Abstract: No abstract text available
    Text: SH67P33C OTP 1K 4-bit Micro-controller Features SH6610C-Based Single-Chip 4-bit Micro-Controller ROM: 1K X 16 bits RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory Operation Voltage: 1.8V - 3.6V Typically 3.0V 16 CMOS Bi-directional I/O pins and 1 CMOS input pin


    Original     		SH67P33C SH6610C-Based 400kHz 16/fOSC) SH67P33CX PDF

    SH66K33A

    Abstract: No abstract text available
    Text: SH66K33A MASK 1K 4-bit Micro-controller Features SH6610C-Based Single-Chip 4-bit Micro-Controller ROM: 1K X 16 bits RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory Operation Voltage: 1.8V - 3.6V Typically 3.0V 16 CMOS Bi-directional I/O pins and 1 COMS input pin


    Original     		SH66K33A SH6610C-Based 400kHz SH67P33A) 16/fOSC) SH66K33A PDF

    256K x 8 SRAM CY7C128A SRAM

    Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
    Text: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25


    Original     		CY7C122 CY7C150 CY7C130/31 CY7C128A CY6116A MIL-PRF-38535. MIL-STD-883D 22-pin 300-mil 256K x 8 SRAM CY7C128A SRAM 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SH67P33C OTP 1K 4-bit Micro-controller Features „ SH6610C-Based Single-Chip 4-bit Micro-Controller „ ROM: 1K X 16 bits „ RAM: 80 X 4 bits - 32 System Control Register - 48 Data memory „ Operation Voltage: 1.8V - 3.6V Typically 3.0V „ 16 CMOS Bi-directional I/O pins and 1 CMOS input pin


    Original     		SH67P33C SH6610C-Based 400kHz 16/fOSC) PDF

    Untitled

    Abstract: No abstract text available
    Text: SH67P847 OTP 1K 4-bit micro-controller with 10-bit SAR ADC Features „ SH6610C-Based Single-Chip 4-bit Micro-Controller With 10-bit SAR ADC „ OTP ROM: 1K X 16bits „ RAM: 124 X 4bits - 28 System Control Registers - 96 Data Memory „ Operation Voltage: - fOSC =16MHz, VDD = 3.3V - 5.5V


    Original     		SH67P847 10-bit SH6610C-Based 16bits 16MHz, 16MHz 16/fOSC) PDF

    Untitled

    Abstract: No abstract text available
    Text: TM58P11 1. Feature ROM: 1k 1K x 14 bits RAM: 41 (41 x 8 bits) Internal multi-band RC oscillator with programmable calibration, the band ranges include 6M, 4M, 910K and 32K. STACK: 4 Levels Support On-chip programming circuit I/O ports: 9 I/O Pads and 1 input Pad


    Original     		TM58P11 910Khz, 32Khz 100pf 300pf PDF

    CY7C4801

    Abstract: CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 IDT72801 QA08 IDT728X1
    Text: 4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)


    Original     		CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K CY7C4801) CY7C4811) CY7C4821) CY7C4831) CY7C4841) CY7C4851) CY7C4201/4211/4221/ CY7C4801 CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 IDT72801 QA08 IDT728X1 PDF

    CY7C4801

    Abstract: CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851
    Text: CY7C4831/4 1 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)


    Original     		CY7C4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K CY7C4801) CY7C4811) CY7C4821) CY7C4831) CY7C4841) CY7C4851) CY7C4801 CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 PDF

    PDCR 900

    Abstract: SH6610C PDCR 900 -1956 SEGMENT DISPLAY 312H 309H
    Text: SH66L08 1K 4-bit Microcontroller with LCD Driver Features SH6610C-based single-chip 4-bit microcontroller with LCD driver ROM: 1024 X 16 bits RAM: 256 X 4 bits data memory Operation Voltage Range: 1.2V - 1.7V 16 CMOS I/O pins (PORTC, D can switch to segment)


    Original     		SH66L08 SH6610C-based 768KHz 768KHz 4/131KHz 131KHz dutyEG13 SEG14 PDCR 900 SH6610C PDCR 900 -1956 SEGMENT DISPLAY 312H 309H PDF

    SH67P33X

    Abstract: No abstract text available
    Text: SH67P33 OTP 4-bit Micro-controller Features SH6610C-based single-chip 4-bit micro-controller ROM: 1K X 16 bits OTP ROM RAM: 48 X 4 bits RAM Data Memory Operation voltage: 1.8V - 3.6V (Typical: 3.0V) 16 CMOS bi-directional I/O pins and 1 COMS input pin 4-level subroutine nesting (including interrupts)


    Original     		SH67P33 SH6610C-based 400kHz SH67P33X PDF

    PD650C

    Abstract: PD80C49C PD7801G UPD650C 64x8 PD650 uCOM84 MPD7801G UPD80C48C PD7800G
    Text: • 4-Bit Single-Chip M icrocom puters Process Supply Voltage V Instruction Time ROM x8 RAM I/O CMOS +5 10 2k 1k 9 6 x4 6 4 x4 4 bit X 8 3 bit 42-pin DIP /(PD652C 1k 3 2 x4 4 bit X 5 1 bit 28-pin DIP /íPD7502G ííPD7503G 2k •4k 128x4 224 x 4 4 bit X 5


    OCR Scan     		COM43C uPD650C uPD651C uPD652C uPD7502G uPD7503G uPD7506C COM7500 uPD7507SC /iPD7507C PD650C PD80C49C PD7801G 64x8 PD650 uCOM84 MPD7801G UPD80C48C PD7800G PDF

    52212HR

    Abstract: IN3064 256X4 ncr 400 256x4 static ram
    Text: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles


    OCR Scan     		256x4) 52212HR IN3064 256X4 ncr 400 256x4 static ram PDF

    IMS1223P-25

    Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
    Text: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times


    OCR Scan     		IMS1223 45nsec 300-mll IMS1223 IMS1223P-25 IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45 PDF

    rj017

    Abstract: No abstract text available
    Text: IN T E GR AT ED DEVIC E 3fiE » • 4 Ô 2 S 77 1 DDG'lOig S B 1K X 36 2Kx36 CMOS DUAL-PORT STATIC RAM MODULE |cfty Integrated Dei/ice Technology, Inc. IDT PRELIMINARY IDT7M1011 J J ? 012 S 3- \4 FEATURES DESCRIPTION • High density 1K/2K x 36 CM OS Dual-Port Static RAM


    OCR Scan     		2Kx36 IDT7M1011 121-pin IDT7M1011/1DT7M1012 4A25771 MIL-STD883, 7M1011 7M1012 rj017 PDF

    buzzer circuit

    Abstract: 32.768 MHZ OSCILLATOR NOT GIVING OUTPUT QFP160-P-2828 SM3513 sis8 dio8
    Text: SHARP SM3513 4-Bit Single-Chip Microcomputer Data Sheet FEATURES • ROM Capacity - Program ROM 24K x 23-bits - Character ROM 6 x 8 x 256-bits - Constant ROM 1K x 4-bits • RAM Capacity - Working RAM 256 x 4-bits - Display RAM 74 x 32-bits - Data RAM 512 x 8-bits


    OCR Scan     		SM3513 23-bits 256-bits 32-bits buzzer circuit 32.768 MHZ OSCILLATOR NOT GIVING OUTPUT QFP160-P-2828 SM3513 sis8 dio8 PDF

    LH5101

    Abstract: LH5101-30 intel 5101 5101 static ram
    Text: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:


    OCR Scan     		LH5101 22-pin, 300-mil 28-PIN LH5101 LH5101-30 LH5101-30 intel 5101 5101 static ram PDF

    1K x 4 static ram ttl

    Abstract: lh5114
    Text: LH5114 CMOS 4K 1K 4 Static RAM x DESCRIPTION FEATURES • 1,024 x 4 bit organization • Access tim e: • Power consumption: The LH5114H is a static RAM organized as 1,024 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 150 ns (MAX.)


    OCR Scan     		LH5114 LH5114H 18-pin, 300-mil 14H-3 LH5114H-15 1K x 4 static ram ttl lh5114 PDF

    256X4

    Abstract: 1024x4 AM2168 Am91L22
    Text: MOS Memory MOS Memory Functional Index and Selection Guide 1K STATIC RAMS Part Number Am 9122-25 A m 9122-35 Am91L22-35 Am91 L22-45 Am9122-60 Organization 256 x 4 256 x 4 256 x 4 256x4 256 x 4 Acceee Tlme ns 25 35 36 45 60 Power DMpation(mW ) Standby - Active


    OCR Scan     		Am91L22-35 L22-45 Am9122-60 256x4 Am2147 Am2147-45 Am2147-65 Am2147-70 Am21L47-45 Am21147 1024x4 AM2168 Am91L22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1K x 36 2K x 36 CMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1011 IDT7M1012 FEATURES DESCRIPTION • T h e ID T 7 M 1 0 1 1/1 012 are 1K/2K x 3 6 high speed C M O S D ual-Port static RAM modules constructed on a co-fired ceram ic substrate using 4 ID T 7 0 1 0 1 K x 9 Dual-Port RAMs


    OCR Scan     		IDT7M1011 IDT7M1012 IDT7M1011/IDT7M1012 PDF

    LH5114H15

    Abstract: lh5114 1K x 8 static ram LH5114H 1K x 4 static ram ttl 1k x 4
    Text: LH5114 CMOS 4K 1K x 4 S ta tic RAM FEATURES DESCRIPTION • 1,024 x 4 bit organization The LH5114H is a static RAM organized as 1,024 x 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. • Access time: 150 ns (MAX.) • Power consumption:


    OCR Scan     		LH5114 18-pin, 300-mil LH5114H 20-PIN 5114H-3 LH5114H-15 LH5114H15 lh5114 1K x 8 static ram 1K x 4 static ram ttl 1k x 4 PDF

    ic 5101 ram

    Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
    Text: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x


    OCR Scan     		LH5101 22-pin, 300-mil LH5101 LH5101-30 ic 5101 ram 5101 RAM LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)


    OCR Scan     		P4C151 MIL-STD-883C P4C151 -10PC -12PC -12DC -15PC -15DC -20PC -20DC PDF

    a26c

    Abstract: 1K x 8 static ram 1k BIT WORD STATIC RAM MOSTEK MEMORY MOSTEK ROM MK4801A-90 Mostek MK4801 MK4801A Bipolar ROM 1K X 4
    Text: MQSTEK 1K x 8-BIT STATIC RAM MK4801 A P /J /N Series □ High perform ance FEATURES □ Static operation Part No. Access Time □ Organization: 1K x 8 bit RAM JEDEC pinout □ Pin com patible w ith M ostek's BYTEWYDE m em ory fam ily □ 2 4 /2 8 pin R O M /P R O M com patible pin configuration


    OCR Scan     		MK4801 MK4801A-55 MK4801A-70 MK4801A-90 MK4801A DQ211 VSS12C 14DQ4 a26c 1K x 8 static ram 1k BIT WORD STATIC RAM MOSTEK MEMORY MOSTEK ROM Mostek Bipolar ROM 1K X 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5200 C Y 7 C 1 3 0 /C Y 7 C 1 31 W CYPRESS C Y 7 C 1 4 0 /C Y 7 C 1 41 1K x 8 Dual-Port Static Ram Features Functional Description True Dual-Ported memory cells which allow sim ulta­ neous reads of the same mem ory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power


    OCR Scan     		65-micron CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin IDT7130/IDT7140 PDF