K7A323600M
Abstract: K7B321825M-QC65 K7A321800M
Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary
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K7A323600M
K7A321800M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
K7A3236
165FBGA
K7A323600M
K7B321825M-QC65
K7A321800M
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K7M321825M
Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
Text: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary
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K7M323625M
K7M321825M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
165FBGA
x18/x36
K7M321825M
K7M321825M-QC75
K7M323625M
K7M323625M-QC75
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K7M321825M
Abstract: K7M323625M
Text: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAM TM 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
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K7M323625M
K7M321825M
1Mx36
2Mx18
2Mx18-Bit
65V/-0
100-TQFP-1420A
/119BGA
K7M321825M
K7M323625M
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Untitled
Abstract: No abstract text available
Text: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7P323674C
K7P321874C
1Mx36
2Mx18
119BGA
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DS16
Abstract: MC8051M36 MC8051M36L-7R5VI
Text: MC8051M36 36-Mbit: 1Mx36 MOSYS Symmetric Pipelined Burst SRAM The MC8051M36 is packaged in a standard 100 lead LQFP. Lowest Power The MC8051M36 affords systems dramatic power savings due to the benefits of its proprietary MoSys technology. Making it ideal for convection cooled applications, as well as
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MC8051M36
36-Mbit:
1Mx36
MC8051M36
DS16
MC8051M36L-7R5VI
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES • 1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61DDP2B22M18A
IS61DDP2B21M36A
2Mx18,
1Mx36
2Mx18
400MHz
333MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323684M
K7Q321884M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
K7Q3236
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
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Untitled
Abstract: No abstract text available
Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R323684C
K7R321884C
K7R320984C
1Mx36,
2Mx18
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Untitled
Abstract: No abstract text available
Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
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Untitled
Abstract: No abstract text available
Text: K7B323625M K7B321825M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History 1. Initial draft Draft Date May. 10. 2001 Remark Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary
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K7B323625M
K7B321825M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
x18/x36
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Untitled
Abstract: No abstract text available
Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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K7Q323652M
K7Q321852M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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Untitled
Abstract: No abstract text available
Text: K7N323601M K7N321801M 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 1.0 History Draft Date Remark 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 2. Speed bin merge.
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K7N323601M
K7N321801M
1Mx36
2Mx18-Bit
2Mx18
165FBGA
K7N3236
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Untitled
Abstract: No abstract text available
Text: K7I323684C K7I321884C Preliminary 1Mx36 & 2Mx18 DDRII CIO b4 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I323684C
K7I321884C
1Mx36
2Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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SRAM 8T
Abstract: No abstract text available
Text: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7D323674C
K7D321874C
1Mx36
2Mx18
153BGA
012MAX
SRAM 8T
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K7R323682M-FC20
Abstract: K7R320982M-FC20
Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
K7R323682M-FC20
K7R320982M-FC20
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Untitled
Abstract: No abstract text available
Text: IS61QDPB42M18A/A1/A2 IS61QDPB41M36A/A1/A2 2Mx18, 1Mx36 36Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.5 Cycle Read Latency) FEATURES • • • • • • • • • • • • • • • • • • • • • 1Mx36 and 2Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data
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IS61QDPB42M18A/A1/A2
IS61QDPB41M36A/A1/A2
2Mx18,
1Mx36
2Mx18
QV13x15
13x15
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B42M18A/A1/A2 IS61DDP2B41M36A/A1/A2 2Mx18, 1Mx36 36Mb DDR-IIP Burst 4 CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 1Mx36 and 2Mx18 configuration available.
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IS61DDP2B42M18A/A1/A2
IS61DDP2B41M36A/A1/A2
2Mx18,
1Mx36
2Mx18
13x15
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IS61DDB21M36A
Abstract: No abstract text available
Text: IS61DDB22M18A IS61DDB21M36A 2Mx18, 1Mx36 36Mb DDR-II Burst 2 CIO SYNCHRONOUS SRAM FEATURES • 1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61DDB22M18A
IS61DDB21M36A
2Mx18,
1Mx36
1Mx36
2Mx18
13x15
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D0-35
Abstract: No abstract text available
Text: User Guide for QDRII as QDRI 36Mb QDRI 4Busrt B-die Advance 1Mx36 & 2Mx18 QDR TM b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit QDR TM SRAM Technical Note Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. June. 19, 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
11x15
D0-35
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Untitled
Abstract: No abstract text available
Text: IS61QDP2B42M18A/A1/A2 IS61QDP2B41M36A/A1/A2 2Mx18, 1Mx36 36Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 1Mx36 and 2Mx18 configuration available. On-chip Delay-Locked Loop (DLL) for wide data
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IS61QDP2B42M18A/A1/A2
IS61QDP2B41M36A/A1/A2
2Mx18,
1Mx36
1Mx36
2Mx18
ecIS61QDP2B41M36A-400B4LI
IS61QDP2B42M18A-400B4I
IS61QDP2B42M18A-400B4LI
IS61QDP2B41M36A-333B4I
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B22M18A/A1/A2 IS61DDP2B21M36A/A1/A2 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 1Mx36 and 2Mx18 configuration available.
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IS61DDP2B22M18A/A1/A2
IS61DDP2B21M36A/A1/A2
2Mx18,
1Mx36
1Mx36
2Mx18
13x15
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Untitled
Abstract: No abstract text available
Text: W PS1M 36-XM SCXXX W hite El e c t r o n ic D esigns C o r p o r a t i o n 1Mx36 SRAM MODULE p r e lim in a r y * FEATURES • A cce ss Tim es of 1 5 , 1 7 , 20, 25, 35ns ■ Three S ta te Outputs. ■ Packaging ■ TTL C o m p a tib le Inputs and Outputs
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36-XM
1Mx36
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