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STMicroelectronics STM1061N23WX6F IC SUPERVISOR 1 CHANNEL SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STM1061N23WX6F	Digi-Reel	29,331		1	1 $0.82 10 $0.589 100 $0.4653 1000 $0.40037 10000 $0.40037	Buy Now
	STM1061N23WX6F	Cut Tape	29,331		1	1 $0.82 10 $0.589 100 $0.4653 1000 $0.40037 10000 $0.40037	Buy Now
	STM1061N23WX6F	Reel	24,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.33713	Buy Now
Avnet Americas	STM1061N23WX6F	Reel	12,000	24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.16613	Buy Now
Mouser Electronics	STM1061N23WX6F		5,017			1 $0.53 10 $0.342 100 $0.338 1000 $0.338 10000 $0.337	Buy Now
STMicroelectronics	STM1061N23WX6F		5,017		1	1 $0.52 10 $0.34 100 $0.33 1000 $0.33 10000 $0.33	Buy Now
Bristol Electronics	STM1061N23WX6F		20		7	1 - 10 $0.75 100 $0.75 1000 $0.75 10000 $0.75	Buy Now

Rochester Electronics	STM1061N23WX6F		12,000		1	1 $0.4494 10 $0.4494 100 $0.4224 1000 $0.382 10000 $0.382	Buy Now
TME	STM1061N23WX6F				1	1 $1.093 10 $0.977 100 $0.628 1000 $0.48 10000 $0.401	Get Quote
ComSIT USA	STM1061N23WX6F		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STM1061N23WX6F			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STM1061N23WX6F			25 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STM1061N23WX6F1
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Bristol Electronics	STM1061N23WX6F1		1,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
OSRAM SYLVANIA 1N23WE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1N23WE		28		1	1 $180 10 $166.14 100 $147.6 1000 $147.6 10000 $147.6	Buy Now
Quest Components	1N23WE		21			1 $225 10 $225 100 $180 1000 $180 10000 $180	Buy Now
NA JAN1N23WG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	JAN1N23WG		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microwave Associates Inc JCBYI-1N23WE MIXER DIODE, X BAND TO KU BAND, 465OHM Z(V) MAX, 7.5DB NOISE FIGURE, SILICON, DO-23 (Also Known As: 1N23WE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	JCBYI-1N23WE		9			1 $97.5 10 $93.75 100 $93.75 1000 $93.75 10000 $93.75	Buy Now

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1N23W Datasheets (42)

Part	Manufacturer	Description	Datasheet Type	PDF
1N23WD	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
1N23WD	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N23WDM	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
1N23WE	Advanced Semiconductor	SILICON MIXER DIODE	Original	PDF
1N23WE	MicroMetrics	S - x Band Point Contact Mixer Diode	Original	PDF
1N23WE	MicroMetrics	S - X Band Point Contact Mixer Diodes	Original	PDF
1N23WE	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF
1N23WE	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
1N23WE	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N23WE	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N23WE	ZaeriX	Short Form Data Catalogue 1972-73	Short Form	PDF
1N23WEM	MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF
1N23WEM	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF
1N23WEM	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF

1N23WEM	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N23WEMR	MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF
1N23WEMR	Advanced Semiconductor	Silicon Point Contact Mixer Diodes	Scan	PDF
1N23WEMR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N23WER	MicroMetrics	RF Mixer Diode, PN Mixer, UHF\|SHF, Case Style	Original	PDF
1N23WER	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

1N23W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N23we diode Abstract: 1N23WE Text: 1N23WE SILICON MIXER DIODE PACKAGE STYLE DO- 23 DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS	Original	PDF	1N23WE 1N23WE 1N23we diode
1n23we Abstract: No abstract text available Text: 1N23WE 35 40 and 60 Amp Power Silicon Rectifier Diodes 49.87 Diodes UHF/Microwa. Page 1 of 1 Enter Your Part # Home Part Number: 1N23WE Online Store 1N23WE Diodes 35 40 and 60 Amp Power Silicon Rectifier D iodes Transistors Integrated Circuits Enter code INTER3 at	Original	PDF	1N23WE 1N23WE com/1n23we
1N23WG Abstract: mr 818 diode mixer diode Text: 1N23WG SILICON MIXER DIODE DESCRIPTION: PACKAGE STYLE DO- 23 The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package • Matched pairs available by adding	Original	PDF	1N23WG 1N23WG mr 818 diode mixer diode
Untitled Abstract: No abstract text available Text: HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s	Original	PDF	1N23WEM 1N23W
D65019 Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100	Original	PDF	MIL-S-19500/322 ASME-14 037Z3 D65019 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR 1N23WG
1N23 diode Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100 Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	Original	PDF	CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
1N23we diode Abstract: 1n23 Text: HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s	Original	PDF	1N23WE 1N23W DO-23 1N23we diode 1n23
1N21B Abstract: 1n23 cv102 Text: ueti, Line, ^s-mi-donductoi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Microwave Diodes b Notn L C — Conversion Lots MR -NoiK Ratio P R F - M*x. RF Paww V B - Breakdown Voltage - Overall NoiM Fictor	Original	PDF	500/1000mA 1N21C 1N23A 1N21B 1N21B 1n23 cv102
CS100 Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	Original	PDF	CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
FGFA Abstract: 1N23E sft 43 1N23CR 9375MHz 1N23CMR 1N23D 1N23DM 1N23DR 1N23EM Text: - 166 - MI J& % a s * 1N23CMR Bn * * * * B£ B£ 0 'S Q1 1N23CR 1N23D 1N23DM 1N23DMR * 1N23DR Bn * 1N23EM B l am * 1N23E * 1N23BMR * 1N23ER * 1N23F * 1N23FM * 1N23FMR * 1N23P8 * 1N23G * 1N23GM * 1N23GMR * 1N23GR * 1N23WD * 1N23WDM * 1N23WE * 1N23WBM * 1N23WF	OCR Scan	PDF	1N23CMR 1N23CR 1N23D 1N23DM 1M230MR lN23CÃ ffi14 9375MHz, 1N23DR 1N23E FGFA sft 43 9375MHz 1N23EM
1N21B Abstract: 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A Text: 46 Electronic Valves Z& I Aero Services Ltd London England 1972-73 'Tm ìiX G E R M A N IU M J U N C T IO N S T U D M O U N T E D H A L F W A V E R E C T IF IE R S GJ3M, 200 p.i.v. GJ5M, 300 p.i.v. GJ6M, 150 p.i.v. GJ7M, 80 p.i.v. Note 400/800 m A D C . 400/800 m A DC	OCR Scan	PDF	SZT19 1N23C CV111 1N23CR* CV112 1N23E CV291 1N23WEE CV2226 CV2258 1N21B 1n23b 1N21B diode 1N23 1N25 diode CS34B 1N23CR 1N25 1N23A CS36A
1n415c Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed	OCR Scan	PDF	CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
1N23 diode Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local	OCR Scan	PDF
IN23C Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff\|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR

FD6666 diode Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5	OCR Scan	PDF	A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
GFB7400D Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409 Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest	OCR Scan	PDF
1N23C Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132 Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf\| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:	OCR Scan	PDF
1N21 Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26 Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di odes by basic construction, package style and frequency band. Type	OCR Scan	PDF	1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26
1N23C diode Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure	OCR Scan	PDF	DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR
in23c Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416 Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make	OCR Scan	PDF	DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
1N23 diode Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure	OCR Scan	PDF
BA100 diode Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{\|iliitltrs\|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any	OCR Scan	PDF	A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

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1N23W Price and Stock

STMicroelectronics STM1061N23WX6F

STMicroelectronics STM1061N23WX6F1

OSRAM SYLVANIA 1N23WE

NA JAN1N23WG

Microwave Associates Inc JCBYI-1N23WE

1N23W Datasheets (42)

1N23W Datasheets Context Search

1N23we diode

1n23we

1N23WG

Untitled

D65019

1N23 diode

1N23we diode

1N21B

CS100

FGFA

1N21B

1n415c

1N23 diode

IN23C

FD6666 diode

GFB7400D

1N23C

1N21

1N23C diode

in23c

1N23 diode

BA100 diode