DIODE 1N3070
Abstract: 1N307 1N3070 JANTX 1N3070-1
Text: FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3070-1
1N3070-1
500mW
100mA,
667mA/
MILPRF-19500/169
DIODE 1N3070
1N307
1N3070 JANTX
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PDF
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1N3070
Abstract: DIODE 1N3070
Text: 1N3070 High Speed High Conductance Diode. Working Inverse Voltage 175 V. 1.35 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N3070 Online Store 1N3070 Diodes High Speed High Conductance D iode. Working Inverse Transistors Voltage 175 V. Integrated Circuits
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1N3070
1N3070
DO-35
com/1n3070
DIODE 1N3070
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PDF
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Untitled
Abstract: No abstract text available
Text: FEATURES 1N3070- 1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3070-
1N3070-1
500mW
100mA,
667mA/Â
MILPRF-19500/169
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PDF
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DIODE 1N3070
Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
Text: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current
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1N3070
DO-35
MMBD1401
DIODE 1N3070
1N3070
high voltage diode
1N3070 DIODE
1N3070 DIODE DATASHEET
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ UATERTOlilN SDE COMPUTER DIODE T> m D01E3bQ 25G • U N I T 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 y y i v i r u I CIV U I K J U U . Switching ^ <r 9 i ABSOLUTE MAXIMUM RATINGS, AT 25°C Reverse Breakdown Voltage . 200V
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OCR Scan
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D01E3bQ
1N3070;
1N3070
1N4938;
1N4938
150mA
500mA
250mW
100/jAdc
175Vdc
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PDF
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jx4938
Abstract: 1N3070 1N3070 JANTX J493 1N4938 1N4938-1 1N4938UR-1 DO-213AA 1N3070-1 1N3070UR-1
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 February 2010. INCH-POUND MIL-PRF-19500/169N 2 NOVEMBER 2009 SUPERSEDING MIL-PRF-19500/169M 10 APRIL 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,TYPES 1N3070, 1N3070-1,
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MIL-PRF-19500/169N
MIL-PRF-19500/169M
1N3070,
1N3070-1,
1N3070UR-1,
1N4938,
1N4938-1,
1N4938UR-1,
jx4938
1N3070
1N3070 JANTX
J493
1N4938
1N4938-1
1N4938UR-1
DO-213AA
1N3070-1
1N3070UR-1
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PDF
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1N3070
Abstract: 1N3070 DIODE DATASHEET
Text: 1N3070 1N3070 DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 200 Units V IF AV IFSM Average Rectified Forward Current 500 mA Non-repetitive Peak Forward Surge Current
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1N3070
DO-35
1N3070
1N3070 DIODE DATASHEET
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PDF
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1N4939
Abstract: 1N4938 1N3070 1N4938 JANTX
Text: COMPUTER DIODE 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 Switching ABSOLUTE MAXIMUM RATINGS, AT 25«C FEATURES Reverse Breakdown Voltage . 2 0 0 V Steady-State Forward Current at or below 25°C Free Air T em p era tu re.1 5 0 m A
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OCR Scan
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1N3070;
1N3070
1N4938;
1N4938
175Vdc
100/yAdc
1N3070
1N4939
1N4938
1N4938 JANTX
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PDF
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MMBD1502A
Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200
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1N486B
D0-35
BAV21
DO-35
1N3070
1N459
1N459A
MMBD1502A
1N914 SOT-23
T0236
FOH300
MMBD1402
1n4148 LL34
FOH300A
1N485B
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N3070+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0
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1N3070
Current100m
Voltage200
Time50n
Current100n
Current100u
StyleDO-35
rrent100u
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N3070-1+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0
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1N3070-1
Current100m
Voltage200
Time50n
Current100n
Current100u
StyleDO-35
rrent100u
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PDF
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IN3070
Abstract: 1N3070 IN3070 diode DIODE 1N3070
Text: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C
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OCR Scan
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1N3070
DO-35
200mAdc
500mA
T-r-100
IN3070
1N3070
IN3070 diode
DIODE 1N3070
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N3070+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0
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1N3070
Current100m
Voltage200
Time50n
Current100n
Current100u
StyleDO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N3070-1+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0
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1N3070-1
Current100m
Voltage200
Time50n
Current100n
Current100u
StyleDO-35
ent100u
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PDF
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DO-41
Abstract: DO41 fairchild 1n3600 DIODE 1N4001 FDC3600 1N3070 1N3600 1N4002 1N4376 1N485B
Text: FAIRCHILD DIODES/RECTIFIERS DIODES DIODE DICE BY DESCENDING BV C Basic BV >R Vr V f If -Ir •f *rr V @ mA ns @ mA DEVICE Standard V nA @ V pF Max Max Typ Item NO. Device Min Max 1 FDC3070 1N3070 200 100 175 1.0 100 50 10 2.5 100 500 Chip Size Mils Basic
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FDC3070
1N3070
15x15
FDC485B
1N485B
FDC3600
1N3600
FDC4376
1N4376
DO-41
DO41
fairchild 1n3600
DIODE 1N4001
1N4002
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N3070-1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)30m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m
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1N3070-1
Current100m
Voltage200
Time50n
Current100n
Current100u
StyleDO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: Switching Diodes High Voltage Diodes v Device No. Package No. Glass Package *R R M •r (V) (nA) Min Max V F @ V R (V) (V) Min @ Max 'f (mA) c *n (pF) (ns) Max Max Test Cond. Process No. 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100
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OCR Scan
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1N3070
DO-35
1N4938
FDH400
FDH444
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PDF
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1N3070
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi taxial diode with 1N3070 high-speed sw itching char acteristics. It has a typical breakdow n-voltage rating
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OCR Scan
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05DM33fl
DDG37T1
T-91-Ã
1N3070
100mA
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PDF
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cho bond 1029
Abstract: No abstract text available
Text: TYPE 1N3070 SILICON SWITCHING DIODE B U L L E T I N N O . DL-S 7 3 9 3 7 0 , N O V E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 973 H IG H -V O L T A G E SW ITCH IN G D IO D E Rugged Double-Plug Construction Electrically Equivalent to 1N4938 DO-35 * m echanical d ata
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OCR Scan
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1N3070
1N4938
DO-35)
cho bond 1029
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PDF
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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PDF
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DIODE 1N3070
Abstract: 1N3070 JAN 1N4307 fa4333 1N3070 DIODE FCT1121 1n3595 1n4306 fa2312 1n4307
Text: DIODES VOLTAGE REFERENCE ZENER DIODES NUMERIC LISTING METAL PACKAGE Vz @ lz VOLTS 'z mA ±5% (TEST) FCT1021 6.7 0.1 FCT1022 6.7 FCT1025 TYPE Zz @ lz TEMPERATURE COEFFICIENT TEMP RANGE T.C. ohms %/°C MAX Package 0 to +100 ±.001 750 TO-18 0.1 0 to +100 ±.002
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OCR Scan
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FCT1021
FCT1022
FCT1025
FCT1121
FCT1122
FCT1125
1N914
DIODE 1N3070
1N3070
JAN 1N4307
fa4333
1N3070 DIODE
1n3595
1n4306
fa2312
1n4307
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PDF
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1N3070
Abstract: FD444 1N809 1n841 1n845 1N837
Text: DIODES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE •r Bv VOLTS nA @ MIN MAX 1N843 250 1N809 c VF PF *RR ns MAX MAX VO LTS @ VR VO LTS MAX «F mA 100 @ 200 1.0 150 300 DO-7 220 1000 @ 200 1.0 @ 100 300 DO-7 FD400 200 100 @ 150 1.0 @ 400
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1N843
1N809
FD400
FDH400
FDN400
1N629
1N643
1N643A
1N804
1N3070
FD444
1n841
1n845
1N837
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PDF
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Untitled
Abstract: No abstract text available
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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1N3070
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DIODE 1N3070
Abstract: 1N3070 CMPD2003 CMPD2004 CPD60 1N3070 DIODE
Text: PROCESS CPD60 Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au - 6,000Å
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CPD60
CMPD2003
CMPD2004
1N3070
DIODE 1N3070
1N3070
CMPD2003
CMPD2004
CPD60
1N3070 DIODE
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