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    T0236 Search Results

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    T0236 Price and Stock

    Vishay Sfernice RCMT02365R0DES03

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    DigiKey RCMT02365R0DES03 Bag 10 1
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    Samtec Inc IDMD-13-T-02.36

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    Samtec Inc IDMD-10-T-02.36

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    Vishay Sfernice RCMT0236500FHS03

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    Vishay Sfernice RCMT0236501BES03

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    DigiKey RCMT0236501BES03 Bag 10
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    T0236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR540C

    Abstract: No abstract text available
    Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


    Original     		PDF BFR540 BFR540 BFR540C

    MPS004

    Abstract: npn darlington motorola to92 k0221 HS5305 MPS-004 PMBTA14 PMBTA13
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BA CEO (V) Ie Max (A) Po Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max (I) tf Max (I) Tope, Max (Oe) Package Style Complimen Lary Darlington Pairs SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002


    Original     		PDF SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002 2NS534 2NS535 2NS53S 2NS537 MPS004 npn darlington motorola to92 k0221 HS5305 MPS-004 PMBTA14 PMBTA13

    2410m

    Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
    Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■


    OCR Scan     		PDF T0220 14-Pin 1001P 1001J 1004J 1004P L000J 1000P 1006P T0236 2410m 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


    OCR Scan     		PDF T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T

    MARKING bs170

    Abstract: No abstract text available
    Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		PDF BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1621 2SC4210

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    2N7003

    Abstract: 2N7011 2N7009 1N7003 2N7073 2N700I 2N6798 2N6799 2N6801 2N6802
    Text: - 316 - m £ *± f * V Vd s or £ A * Vd g 11/ V £ (V) m (Ta=25°C> Vg s b Ig s s Pd * /CH * /CH (A) m (nA) V g s th) loss Vg s (V) Vd s (V) (HA) min max (V) (V) m ft Id OnA) & 14 CTa=25tl) I d (on) I Ds(on) Vd s = Vss Ciss g fs Coss Crss V g s “0 (max)


    OCR Scan     		PDF 2N8797 T0-205AF 2N6798 O-205AF 2N6799 O-254AA 2N7077 2N7003 2N7011 2N7009 1N7003 2N7073 2N700I 2N6801 2N6802

    Untitled

    Abstract: No abstract text available
    Text: RN1410,RN1411 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1410, RN1411 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5 — 0.3 + 0.25 1 . 5 - 0.15 With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN1410 RN1411 RN1410, RN2410, RN2411

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031

    transistor marking ra

    Abstract: No abstract text available
    Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)


    OCR Scan     		PDF MMBF170LT1 OT-23 T0-236AB) transistor marking ra

    226AA

    Abstract: T0-226AA T0236AB T0226AA
    Text: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219


    OCR Scan     		PDF T0-236AB OT-23) T0-226AA 226AA T0-226AA T0236AB T0226AA

    marking 1d4

    Abstract: No abstract text available
    Text: DUAL ZENER DIODES COMMON ANODE, 300mW AZ23 SERIES CASE TYPE; T0-236AB (SOT-23) % Dynamic Resistance Zener Voltage*1* at lz - 5 m A Reverse Voltage at Ir = 100 nA VzV at lz = 5mA t = 1 kHz rg o D1 2.5 . 2.9 7 5 (<83) <500 - 9 . . -4 AZ23-C3 D2 2.8 . 3.2


    OCR Scan     		PDF 300mW) T0-236AB OT-23) AZ23-C2V7 AZ23-C3 AZ23-C3V3 AZ23-C3V6 AZ23-C3V9 AZ23-C4V3 AZ23-C4V7 marking 1d4

    MMBD1502A

    Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
    Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200


    OCR Scan     		PDF 1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan     		PDF 1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA

    to-226aa

    Abstract: TO226AA T0-226AA CR16 J511
    Text: T emic S e m i c o n d u c t o r s S08 T 078 T071 Small-Signal Diodes Part Number Nominal Forward Current mA Forward Current Tolerance (±%) Limiting Voltage Max (V) Peak Operating Voltage Min (V) Dynamic Impedance Min (kQ) Typ Knee Impedance (kQ) Package


    OCR Scan     		PDF CR160 CR180 CR200 CR220 CR240 CR270 CR300 CR330 CR360 CR390 to-226aa TO226AA T0-226AA CR16 J511

    DN6852

    Abstract: 4 pin linear hall sensor schemi DN6849 DN6853 DN8893 DN8893MS DN8899 T0236 4 pin hall high sensitivity
    Text: Panasonic Hall ICs DN8893M S High Sensitivity Hall 1C Operating in Alternative Magnetic Field • Overview The DN8893MS is a combination of a Hall element, amplifier, Schmidt Circuit, stabilized power supply and temperature compensator integrated on an identical chip


    OCR Scan     		PDF DN8893MS DN8893MS DN8893 DN6852 DN6849 DN6853 DN8899Â 4 pin linear hall sensor schemi DN6849 DN8899 T0236 4 pin hall high sensitivity

    BD371C-10

    Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
    Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o


    OCR Scan     		PDF b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Hall ICs DN8893MS High Sensitivity Hall 1C Operating in Alternative Magnetic Field • Overview U nit I m m The D N8893M S is a combination of a Hall element, amplifier, Schmidt Circuit, stabilized power supply and temperature compensator integrated on an identical chip


    OCR Scan     		PDF DN8893MS N8893M DN8893 DN6852 DN6849 DN8893 DN6849) SSIP003-P-0000

    mps 444

    Abstract: ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144
    Text: &H FAIRCHILD SEM ICO NDUCTOR DE ÍB Mb Tb 74 005737b MPS3392/FTS03392 MPS3393/FTS03393 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers - — « « • . . . 25 V M in hFE . • • 150-300 (M P S /FT S 03392), 90-180 (M P S /FT S 03393)


    OCR Scan     		PDF MPS/FTS03392) MPS/FTS03393) 2N4125, 2N4126 MPS3392 MPS3393 FTS03392 FTS03393 O-236AA/AB O-236AA/AB mps 444 ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144

    Untitled

    Abstract: No abstract text available
    Text: 2SA1620 T O SH IB A 2 S A 1 620 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AU DIO FREQ U ENCY AM PLIFIER APPLICATIO N S + 0.5 2.5 - 0 .3 Complementary to 2SC4209 MAXIM UM RATINGS (Ta = + 0.25 1 .5 - 0 .1 5 , 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SA1620 2SC4209

    MV2107

    Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
    Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.


    OCR Scan     		PDF MV21XX MMBV21XXLT1 1MV21 40Vdc n/MV2109 MV2107 MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed tor high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    OCR Scan     		PDF BAT54LT1 OT-23 T0-236AB) DCH3A73

    Untitled

    Abstract: No abstract text available
    Text: 1SS374 T O SH IB A TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCH O TTKY BARRIER TYPE Unit in mm + 0.5 8.5 0.3 • • + 0.2 5 1.5 - 0 .1 5 Small Package Low Forward Voltage : Vp 2 = 0.23V (TYP.) @Ijr = 5mA I- -I o' o + MAXIM UM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS374 SS374