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    1N3489 Search Results

    1N3489 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N3489 APD Semiconductor DO7, DO-35 Four Layer Diodes Scan PDF
    1N3489 APD Semiconductor Four Layer Diodes / Rectifiers Scan PDF
    1N3489 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3489 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    1N3489 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3489 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3489A APD Semiconductor DO7, DO-35 Four Layer Diodes Scan PDF
    1N3489A APD Semiconductor Four Layer Diodes / Rectifiers Scan PDF
    1N3489A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3489A Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    1N3489A Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    1N3489 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N3489 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current6.0m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m


    Original     		PDF 1N3489 StyleDO-204AA NumberTY00200003

    1N5411

    Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
    Text: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A


    Original     		PDF 1N3299 1N3300 1N3300A 1N3301 1N3302 1N3302A 1N3303 1N3303A 1N3304 1N5411 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron

    shockley diode

    Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
    Text: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060


    Original     		PDF 1N3771 1N3300A 1N3300 4E20M28 4E20M8 shockley diode shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835

    4E20-8

    Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E20-8 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490

    fri07

    Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 fri07 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303

    4E50M-28

    Abstract: FR103 1N3772
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan     		PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E50M-28 FR103 1N3772

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    3S41SL

    Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
    Text: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28


    OCR Scan     		PDF 3S41SL DO-7/DO-35 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 shockley 4E30-8

    shockley

    Abstract: 4E30-8 1N3839 1N3299 1N3836 1N3842 4E20-28 4E20-3 4E20-8 4E20-M-28
    Text: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E 20-M -8 4E20-28 20±4 20±4 20±4 20±4 20 ± 4 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4


    OCR Scan     		PDF 3541SL DO-7/DO-35 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 shockley 4E30-8 1N3839 1N3299 1N3836 1N3842

    shockley

    Abstract: 4E20-8 4E30-8 1N3844 1n3842 4E20-28 4E20-3 4E20-M-28 4E20-M-3 4E20-M-8
    Text: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 - — 14-25 — 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4


    OCR Scan     		PDF 3541SL DO-7/DO-35 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 shockley 4E30-8 1N3844 1n3842

    4E20-28

    Abstract: 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20-8 4E20
    Text: 53E D AMERICAN POWER DEVICES • D73713S Q000Q25 4 .■ 5 FOUR-LAYER DIODES “ — - — - - i I DO-7/DO-35 Case Type Switching Voltage Vs ± V @ 25°C v 4t?20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 20±4 20±4 20±4 20 ± 4 20±4 4E20-M-28


    OCR Scan     		PDF D73713S Q000Q25 DO-7/DO-35 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20