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    1N3600 CHIP Search Results

    1N3600 CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    1N3600 CHIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    in3600

    Abstract: 1N4150 1N4150 JANTXV JANTX 1N4150 1N3600 IN4150 JANTX 1N4150-1 1N4150-1 JANTXV1N3600 JTXV1N3600
    Text: POMPI ITFP ninnF I U lW U t V s V S I V ir U 2 0 0 rnA Low Power, Switching 1N3600; JAN, JAN TX & JANTXV 1N3600 1N4150; JAN, JAN TX & JANTXV 1N4150 JAN, JAN TX & JANTXV 1N4150-1 FEATU RES DESCRIPTION • • • • T h is serie s of sw itc h in g d io d es is u seful in


    OCR Scan     		200mA IN3600; 1N3600 1N4150; 1N4150 1N4150-1 MIL-S-19500/231 DO-35 150-C 926-0404-FAX in3600 1N4150 JANTXV JANTX 1N4150 IN4150 JANTX 1N4150-1 1N4150-1 JANTXV1N3600 JTXV1N3600 PDF

    Untitled

    Abstract: No abstract text available
    Text: n O M P U T F P niOHF ; ; nm r u 1 L“rv 200m A Low Power, Switching I N 3600; JAN, JAN TX & JANTXV 1N3600 1N4150; JAN, JAN TX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • T h is series of sw itching d iodes is useful in


    OCR Scan     		1N3600 1N4150; 1N4150 1N4150-1 MIL-S-19500/231 DO-35 PDF

    1n3600

    Abstract: 1N4150 1n3600 chip
    Text: P O M P I JTFR DIODF W I T ,r u 1 L/IV7t/U 200rnA Low Power, Switching 1N3600; JAN, JANTX & JANTXV I N 3600 1N4150; JAN, JANTX & JANTXV 1N4150 JAN, JANTX & JANTXV 1N4150-1 FEATURES DESCRIPTION • • • • This series of switching diodes is useful in many computer sw itching applications, for


    OCR Scan     		200rnA 1N3600; 1N4150; 1N4150 1N4150-1 MIL-S-19500/231 DO-35 Cur70 1n3600 1n3600 chip PDF

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


    OCR Scan     		1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching PDF

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


    OCR Scan     		1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605 PDF

    1N3600

    Abstract: 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		CPD41 1N3600 1N4150 CMPD4150 25-August 1N3600 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die PDF

    1N3600

    Abstract: 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		CPD41 1N3600 1N4150 CMPD4150 22-March 1N3600 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF

    1N3600

    Abstract: 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Central Switching Diode TM Semiconductor Corp. High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD41 1N3600 1N4150 CMPD4150 1N3600 1N4150 CMPD4150 CPD41 1n3600 die PDF

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007 PDF

    DO-41

    Abstract: DO41 fairchild 1n3600 DIODE 1N4001 FDC3600 1N3070 1N3600 1N4002 1N4376 1N485B
    Text: FAIRCHILD DIODES/RECTIFIERS DIODES DIODE DICE BY DESCENDING BV C Basic BV >R Vr V f If -Ir •f *rr V @ mA ns @ mA DEVICE Standard V nA @ V pF Max Max Typ Item NO. Device Min Max 1 FDC3070 1N3070 200 100 175 1.0 100 50 10 2.5 100 500 Chip Size Mils Basic


    OCR Scan     		FDC3070 1N3070 15x15 FDC485B 1N485B FDC3600 1N3600 FDC4376 1N4376 DO-41 DO41 fairchild 1n3600 DIODE 1N4001 1N4002 PDF

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Text: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150 PDF

    BD458

    Abstract: BD457 BZ755 1N969 DIODE ln4001 1N4001 zener diode BZ752A B2D4148 BD433B 1N752
    Text: Discrete Devices Beam Lead Chips Cont. Zener Chips 100% Probed Parameters @ 25°C Nominal Type Sim ilar Zener E IA Type Voltage Ir @ V r V z @ iz V olts V olts Min. 'Z mA Max. iuA Outline Ident. Max. Dwg. Code1 V Max. Mach. Z z @ iz Ohms BZ752 1N752 5.6


    OCR Scan     		BZ752 1N752 BZ752A 1N752A BZ755 1N755 BZ755A 1N755A BZ758 1N758 BD458 BD457 1N969 DIODE ln4001 1N4001 zener diode B2D4148 BD433B PDF

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent PDF

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002 PDF

    2N3638 equivalent

    Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
    Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813


    OCR Scan     		500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 equivalent 2N2219 transistor substitute 2N3638 transistor 2N5815 of 2n2905 1N4532 hs5810 PDF

    1n41481 zener diode

    Abstract: GaAs tunnel diode 1n4148 zener diode DATASHEET TUNNEL DIODE tunnel diode GaAs AEROFLEX 1N4148 diode download datasheet 1N914 diode data sheet free download germanium diode Germanium diode data sheet
    Text: FOR IMMEDIATE RELEASE: January 18, 2010 CONTACT: Aeroflex Microelectronic Solutions Teresa Farris MARCOM Manager 719-594-8035 [email protected] Aeroflex / Metelics Pete Ciccarelli Product Sales Manager 603-641-3800 x3272 [email protected]


    Original     		x3272 MIL-PRF-19500N 1N4148-1, 1N914, 1N4531 1N4454-1, 1N3064 1N4150-1, 1N3600 MIL-PRF-19500/116 1n41481 zener diode GaAs tunnel diode 1n4148 zener diode DATASHEET TUNNEL DIODE tunnel diode GaAs AEROFLEX 1N4148 diode download datasheet 1N914 diode data sheet free download germanium diode Germanium diode data sheet PDF

    Zener Diode 4148

    Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
    Text: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80


    OCR Scan     		OT-23, OT-143, S0D-80 OT-143 OT-89 OT-23 BAS28 Zener Diode 4148 zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23 PDF

    1N4532

    Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
    Text: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic


    OCR Scan     		1N643; 1N662; 1N663; 1N643 1N662 1N663 MIL-S-19500/256 1N662 1N4532 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 PDF

    MD4148

    Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
    Text: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*


    OCR Scan     		1N8211N829 1N9351N939 1N9411N945- CZ821CZ829 CZ935CZ939 CZ941CZ945 1N61031N6137 1N61391M6173 DD6103DD6137 DD6139DD6173 MD4148 MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2 PDF

    Diode 1N41

    Abstract: PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617
    Text: Hi-Rel Components from Aeroflex / Metelics Diodes Switching Zener TC Zener Current Regulators Transistors Small Signal Medium & High Power Darlingtons Silicon Controlled Rectifiers JANHC and JANKC Chips DLA Certified JAN–JANS Short Form Catalog August 9, 2012


    Original     		DO-35 1N461 1N4616- MIL-PRF-19500 nMIL-STD-750 nISO9001-2008 SFMHR-8-09-12 Diode 1N41 PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617 PDF

    CRYSTAL 20 mhZ

    Abstract: Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S
    Text: OM C HI P SEE D S YSTEMS bT' l OLi S? 0000M47 OCS SD2 PCK604 ^ 5 0 - 0 ^ 50 to 600 MHz Crystal Controlled Frequency Synthesizer OnChip Systems P R O D U C T H IG H L IG H T S 50 - 600 MHz ♦ F requency Range 50 to 6 0 0 MHz 12.5-18.75 MHz CRYSTAL ♦ Inexpensive In p u t C rystal 12.5 to


    OCR Scan     		b7104S7 PCK604 CRYSTAL 20 mhZ Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S PDF

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910 PDF

    GR712RC

    Abstract: UT700 melf ZENER diode COLOR CODE 5962R102 smd zener diode color code UT8QNF8M HDMI verilog BCH RTAX2000 UT54ACS164245 "HARMONIC DRIVE"
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form December 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion


    Original     		PDF