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    1N4153 SILICON DIODES Search Results

    1N4153 SILICON DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N4153 SILICON DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Switching

    Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
    Text: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100


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    PDF DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 Switching 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063

    JX4153

    Abstract: JV4153 1N4153-1 1N4153UR-1 1N4534 J-1N4148 diode MARKING CODE jx 337K
    Text: INCH-POUND MIL-PRF-19500/337K w/AMENDMENT 2 15 July 2010 SUPERSEDING MIL-PRF-19500/337K w/AMENDMENT 1 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD,


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    PDF MIL-PRF-19500/337K 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4534, 1N4534UB, JX4153 JV4153 1N4153-1 1N4153UR-1 1N4534 J-1N4148 diode MARKING CODE jx 337K

    1N4153

    Abstract: LM390
    Text: 1N4153 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4153 Availability Online Store


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    PDF 1N4153 1N4153 DO-35 STV3208 LM390

    1N5426

    Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


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    PDF 00000S3 DO-35 400mW 1N4150 1N4152 1N4153 1N4305 DO-35 1N5426 1N5208 AMERICAN POWER DEVICES 1n914

    1N4149

    Abstract: 1N4150 1N4152 1N4153 1N4154 1N4447 1N4449 1N4454 1N914 ts65
    Text: 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM in c h e s M ax. M in . M ax. -


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    PDF 1N914 1N4454 1N4149, 1N4447 1N4449 DO-34. 1N4450 1N4451 1N4453 1N4149 1N4150 1N4152 1N4153 1N4154 1N4454 ts65

    Untitled

    Abstract: No abstract text available
    Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature


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    PDF 1N914. 1N4454 1N4149, 1N4447 1N4449 DO-34. 1N4451 1N4453

    1n4149

    Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
    Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature


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    PDF 1N914. 1N4454 1N4149, 1N4447 1N4449 DO-34. 1N914 1N4453 1n4149 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4454 1N914

    1N4009

    Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
    Text: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446


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    PDF 00G0301 DO-35 BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N4009 1N4938 1N914A

    DO-35 PACKAGE

    Abstract: DSAIH000251
    Text: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446


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    PDF DO-35 at254 BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 DO-35 PACKAGE DSAIH000251

    Untitled

    Abstract: No abstract text available
    Text: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.


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    PDF 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4151 IN4153

    in4151

    Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
    Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


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    PDF bb53131 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 diode 1N4150 1N4151 1N4153 IEC134

    in4151

    Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
    Text: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.


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    PDF 1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4153 IN4153 diode 1N4151 1N4153 1N4150 IEC134 colourcoded diodes

    1N4153 silicon diodes

    Abstract: 1N4151 1N4152 1N4153 1N4154 D0-35
    Text: 1N4151 THRU 1N4l 5A Central Semiconductor Corp. Central Semiconductor Corp. SILICON SWITCHING DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4151 Series types are Hermetically Sealed Silicon Diodes


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    PDF D0-35 1N4151 1N4152 1N4153 1N4154 1N4153 silicon diodes

    JANTX 1N916

    Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
    Text: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20


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    PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 JANTX 1N916 diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148

    1N4151f

    Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
    Text: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX


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    PDF l77S47D 1N4151-1N4152-1N4153-1N4154 1-800-232-CQDI 7033il 1N4151f 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154

    in4151

    Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00


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    PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4151 1N4532 1N4148 1N4152

    1N4151 equivalent

    Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
    Text: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­


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    PDF 1N4154 1N4151 1N4454 1N4532 JS-2-65-11 1N4151, 1N4532, 1N4151 equivalent Diode Equivalent 1n4151 1N4152 1N4153 1N4454 MHD618 in4454

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case p Switching Diodes TYPE NO. Vrrm VF @ If trr Ct V •o (mA) (V) (mA) (ns) (pF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10


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    PDF DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case €3 Switching Diodes TYPE NO. V r rm lo VF @ If trr CT V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 1N914B 100 150 1.0 1N3062 75 75 1.0 MAX 4.0 4.0 100 4.0 4.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75


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    PDF DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes €3 DO-35 Case Switching Diodes TYPE NO. Vrrm •o VF @ If mA (V) (mA) (V) MAX MAX MAX trr (ns) CT (pF) MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75


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    PDF DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605

    iskra diode

    Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
    Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA


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    PDF BA511 1N4148 BA513 1N4448 BA517 1N4150 BA518 1N4151 BA519 1N4152 iskra diode BA531 Iskra by dioda DIODE ISKRA Iskra BA-518 1N4153 silicon diodes

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. Vf V lo (mA) (V) (mA) MAX MAX MAX 1.0 10 4.0 4.0 1.0 100 4.0 4.0 Vrrm IF trr Ct (ns) (PF> MAX 1N914 100 150 1N914B 1G0 150 1N3062 7'5 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10


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    PDF DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605

    BA513

    Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
    Text: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150


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    PDF BA511 1N4148 BA513 1N4448 BAS17 1N4150 701/iA BA518 1N4151 BA519 iskra diode BA523 BA521 DIODE BA531 BA521 diode BA531 iskra BA533

    1N3605

    Abstract: 1N3065 1N3062 1N3063 1N3064 1N3600 1N3604 1N4148 1N914 1N914B
    Text: Silicon Diodes DO-35 Case • «3 Switching Diodes TYPE NO. Vr r m •o VF @ If trr Ct V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 MAX 1N3064 75


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    PDF DO-35 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148