1N5060
Abstract: No abstract text available
Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current
|
Original
|
PDF
|
1N5059,
1N5060,
1N5061,
1N5062
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1N5060
|
Untitled
Abstract: No abstract text available
Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current
|
Original
|
PDF
|
1N5059,
1N5060,
1N5061,
1N5062
OD-57
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
SOD-57
Abstract: 1N5061 1N5062 1N5062
Text: 1N5061 THRU 1N5062 SINTERED GLASS JUNCTION AVALANCHE RECTIFIER VOLTAGE： ：600V to 800V CURRENT: 2.0A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability
|
Original
|
PDF
|
1N5061
1N5062
OD-57
OD-57
1N5061
SOD-57
1N5061 1N5062
1N5062
|
1N5625 PIV
Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245
Text: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M
|
Original
|
PDF
|
-65oC
1N4245
1N4246
1N4247
1N4248
1N4249
1N5059
1N5060
1N5061
1N5062
1N5625 PIV
1N5060
BYW55
1N4248
1n5062
1N5061
1N5059
1N5625
byw55 byw56
1N4245
|
Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave
|
Original
|
PDF
|
1N5059-1N5062
1N5059
1N5060
1N5061
1N5062
OD-57,
OD-57
MIL-PRF-19500,
|
1n5060
Abstract: 1N5062 1N5061 1N5059
Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,
|
Original
|
PDF
|
1N5059
1N5060
1N5061
1N5062
CPR1-010
1N5060
1N5062
|
1N5062
Abstract: 1N5059 1N5060 1N5061
Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general
|
Original
|
PDF
|
1N5059
1N5060
1N5061
1N5062
CPR1-010
1N5060
1N5062
|
BA159 equivalent
Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
Text: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02
|
Original
|
PDF
|
1A01/G
1A02/G
1A03/G
1A04/G
1A05/G
1A06/G
1N5059
1N5060
BA159 equivalent
B80C1500-1000
BYS26-45
equivalent sb5100
B380C2000/1500
1N5048
BYX55-350
BYS21-45
BYX55-600
SMB358
|
1n5060v
Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
|
Original
|
PDF
|
1N5059
1N5062
OD-57
MIL-STD-750,
1N5059
OD-57
1N5060
1N5061
D-74025
1n5060v
iSO 15765
1N5060
1N5061
1N5062
Diode 1N5062
1N5059 diode
|
1N5059
Abstract: 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 20 Philips Semiconductors Product specification
|
Original
|
PDF
|
M3D116
1N5059
1N5062
1N5062
1N506
diode 1n5059
1n5062 equivalent
1N5062 diode
MBG044
1N5060
1N5061
|
1N5062
Abstract: 1N5059 1N5060 1N5061 MBG044
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 Jun 19 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062
|
Original
|
PDF
|
M3D116
1N5059
1N5062
1N5062
1N5060
1N5061
MBG044
|
diode 1n5059
Abstract: 1N5062 1N5061 1n5059 MBG044 1N5062 diode 1N5060 1N5059 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19 Philips Semiconductors Product specification
|
Original
|
PDF
|
M3D116
1N5059
1N5062
diode 1n5059
1N5062
1N5061
MBG044
1N5062 diode
1N5060
1N5059 diode
|
1N5062V
Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
|
Original
|
PDF
|
1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
D-74025
13-Apr-05
1N5062V
1N5062
1N5060
1N5061
iso 15765
|
Untitled
Abstract: No abstract text available
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Description Polarity: Cathode indicated by a band Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading
|
Original
|
PDF
|
1N5059
1N5062
MILSTD-750,
1N5060
1N5061
1N5062
D-74025
09-Oct-00
|
|
|
iSO 15765
Abstract: 1N5061 1N5062V 1n5062 equivalent 1n5059 1N5062 diode 1N5060 1N5062 DIODE 1N5060 iso 15765 2
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
|
Original
|
PDF
|
1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
18-Jul-08
iSO 15765
1N5061
1N5062V
1n5062 equivalent
1N5062 diode
1N5060
1N5062
DIODE 1N5060
iso 15765 2
|
1N5062V
Abstract: 1N5059 1N5060 1N5061 1N5062
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
|
Original
|
PDF
|
1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
08-Apr-05
1N5062V
1N5060
1N5061
1N5062
|
1N5059
Abstract: 1N5060 1N5061 1N5062 1N5061 vishay
Text: 1N5059.1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose
|
Original
|
PDF
|
1N5059.
1N5062
1N5059
1N5060
1N5061
45K/W,
100K/W,
D-74025
24-Jun-98
1N5059
1N5060
1N5061
1N5062
1N5061 vishay
|
1N506
Abstract: No abstract text available
Text: 1N5059.1N5062 Vishay Semiconductors Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose
|
Original
|
PDF
|
1N5059.
1N5062
1N5059
1N5060
1N5061
1N5062
45K/W,
D-74025
24-Jun-98
1N506
|
EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
|
Original
|
PDF
|
PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
|
1N5059
Abstract: 1N5062 1n5062 equivalent 1N5061 diode 1n5059 1N5062 diode 1N5060 Marking codes 1N5060 diode CPR1-010
Text: Central 1N5059 THRU 1N5062 TM Semiconductor Corp. GLASS PASSIVATED RECTIFIER 1.0 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed glass passivated package designed for general purpose applications where
|
Original
|
PDF
|
1N5059
1N5062
1N5059
CPR1-010
1N5059,
1N5060)
1N5061,
1N5062)
1N5060
1N5062
1n5062 equivalent
1N5061
diode 1n5059
1N5062 diode
Marking codes
1N5060 diode
|
LN5061
Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
Text: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT
|
OCR Scan
|
PDF
|
1N5059
1N5060
400Mm.
LN5061
A14P Rectifier
1N5059 A14B
A14B
A14P
diode A14B
LN5060
ln5062
1N5059
1N5060
|
in5062
Abstract: A14P
Text: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO
|
OCR Scan
|
PDF
|
1N5059
1N5060ion
in5062
A14P
|
In5062
Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com
|
OCR Scan
|
PDF
|
43Dgg71
1N5059,
1N5060
1N5061,
1N5062
MIL-STD-19500
C/10a/
1N5060,
In5062
in5061
1N5062
1N5061
1N5060
1n5059 harris
JEDEC do-204
1N5059
|
1N5061
Abstract: A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N
Text: 7294621 POWEREX INC 74 I ieT J 7 5 1 4 1 ,2 1 T- °i~i3 DÜÜ1351 Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO
|
OCR Scan
|
PDF
|
DDOiaa11]
270Mm
1N5061
A14P
A14B
IN5059
1N5059
1N5060
1N5062
A14D
A14M
A14N
|