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    1N5062 Search Results

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    1N5062 Price and Stock

    Vishay Semiconductors 1N5062TR

    DIODE AVALANCHE 800V 2A SOD57
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    DigiKey 1N5062TR Cut Tape 32,206 1
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    1N5062TR Reel 25,000 5,000
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    Vishay Semiconductors 1N5062TAP

    DIODE AVALANCHE 800V 2A SOD57
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    DigiKey 1N5062TAP Cut Tape 24,434 1
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    1N5062TAP Ammo Pack 10,000 5,000
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    Vishay Semiconductors 1N5062GP-E3-54

    DIODE GEN PURP 800V 1A DO204AC
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    DigiKey 1N5062GP-E3-54 Cut Tape 22,486 1
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    1N5062GP-E3-54 Reel 16,000 4,000
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    Diotec Semiconductor AG 1N5062

    DIODE GEN PURP 800V 2A DO204AC
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    DigiKey 1N5062 Cut Tape 2,613 1
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    1N5062 Ammo Pack 4,000
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    Mouser Electronics 1N5062 8,309
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    Verical 1N5062 12,000 4,000
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    1N5062 706 353
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    Arrow Electronics 1N5062 958 6 Weeks 1
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    Onlinecomponents.com 1N5062 15,000
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    TME 1N5062 37,453 1
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    Master Electronics 1N5062 15,000
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    Rochester Electronics LLC 1N5062

    DIODE GEN PURP 800V 3A SOD57
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    DigiKey 1N5062 Bulk 1,268
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    1N5062 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5062 Diotec Silicon Rectifiers Original PDF
    1N5062 Elite Semiconductor Products Rectifier, 2A, Diode Rectifier Original PDF
    1N5062 Galaxy Semi-Conductor Holdings PLASTIC SILICON RECTIFIER Original PDF
    1N5062 General Semiconductor Rectifier Diode, Standard Recovery Rectifier, Single, 800V, SOD-57, 2-Pin Original PDF
    1N5062 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    1N5062 Philips Semiconductors Controlled Avalanche Rectifier Original PDF
    1N5062 Semikron Diode, 2A, 800V, Silicon Diode Original PDF
    1N5062 Semikron Standard silicon rectifier diode Original PDF
    1N5062 Taitron Components Rectifier Diode, Single, 800V, SOD-57, 2-Pin Original PDF
    1N5062 Vishay Telefunken Silicon Mesa Rectifiers Original PDF
    1N5062 Central Semiconductor GLASS PASSIVATED RECTIFIER 2.5 AMPS, 200-1000 VOLTS JEDEC DO-204 AP CASE Scan PDF
    1N5062 Dionix General Purpose Axial Lead Silicon Rectifier Scan PDF
    1N5062 General Electric Semiconductor Data Book 1971 Scan PDF
    1N5062 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N5062 General Instrument Short Form Data 1976 Short Form PDF
    1N5062 General Instrument Semiconductors and Electronic Components 1971 Scan PDF
    1N5062 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifiers and Voltage Suppressors Scan PDF
    1N5062 Harris Semiconductor 1A, 200V - 800V Diodes Scan PDF
    1N5062 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N5062 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    1N5062 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5062

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


    Original
    PDF 1N5059---1N5062 DO-41 STD-750 1N5062

    1n5062g

    Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original
    PDF 1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 1n5062g DO-204AC JESD22-B102D J-STD-002B 1N5062GP

    1N5059

    Abstract: 1N5060 1N5061 1N5062 DO-204AP
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA


    Original
    PDF 1N5059 1N5062 MIL-S-19500 DO-204AP DO-204AP 50mVp-p 1N5060 1N5061 1N5062

    1n5060

    Abstract: 1N5062 1N5061 1N5059
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,


    Original
    PDF 1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062

    1N5060GP

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.


    Original
    PDF 1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 50mVp-p 1N5060GP

    Untitled

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original
    PDF 1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    1N5059

    Abstract: 1N5062 1N5060 1N5061
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand


    Original
    PDF 1N5059---1N5062 DO-15, 39gram 1N5059 1N5062 1N5060 1N5061

    1n5060v

    Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original
    PDF 1N5059 1N5062 OD-57 MIL-STD-750, 1N5059 OD-57 1N5060 1N5061 D-74025 1n5060v iSO 15765 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode

    1N5059

    Abstract: 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 20 Philips Semiconductors Product specification


    Original
    PDF M3D116 1N5059 1N5062 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction


    Original
    PDF 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC. 2002/95/EC

    1N5062

    Abstract: 1N5059 1N5060 1N5061
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general


    Original
    PDF 1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062

    1N5062

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 Glass Passivated Junction Rectifier * d e t n e t Features Pa DO204AP 0.034 0.86 0.028 (0.71) DIA. Reverse Voltage 200 to 800 V Forward Current 1.0 A • High temperature metallurgically bonded construction • 1.0 ampere operation at TA=75°C with no thermal runaway


    Original
    PDF 1N5059 1N5062 DO204AP MIL-S-19500 DO-204AP 50mVp-p 1N5062

    1N5062V

    Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original
    PDF 1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 D-74025 13-Apr-05 1N5062V 1N5062 1N5060 1N5061 iso 15765

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation


    Original
    PDF 1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current


    Original
    PDF 1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU

    1N5059GP

    Abstract: 1N5062GP DO-204AC J-STD-002
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current


    Original
    PDF 1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N5062GP DO-204AC J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically


    OCR Scan
    PDF 1N5059GPTHRU 1N5062GP MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ 1.0 Ampere oper­ ation at Ta=75°C with no thermal runaway 'f e


    OCR Scan
    PDF 1N5059 1N5062 D0-204AP MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^


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    PDF 1N5059GPTHRU 1N5062GP MIL-S-19500 1N5059GFTHRU

    1ns061

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


    OCR Scan
    PDF 1N5059GP 1N5062GP 1N5059 1N5062 DO-15 MIL-S-19500 1ns061

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction


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    PDF 1N5059 1N5062 b-2233 1N5059

    In5062

    Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
    Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­


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    PDF 43Dgg71 1N5059, 1N5060 1N5061, 1N5062 MIL-STD-19500 C/10a/ 1N5060, In5062 in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA


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    PDF 1N5059 1N5062 MIL-S-19500 D0-204AP

    LN5061

    Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
    Text: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­ VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT


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    PDF 1N5059 1N5060 400Mm. LN5061 A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060