1N5062
Abstract: 1N5059 1N5060 1N5061 MBG044
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 Jun 19 Philips Semiconductors Product specification Controlled avalanche rectifiers 1N5059 to 1N5062
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Original
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M3D116
1N5059
1N5062
1N5062
1N5060
1N5061
MBG044
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PDF
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1N5062
Abstract: 1N5059 1n5062 DO-15 1N5062 diode 1N5060 1N5061 DO-204AC
Text: 1N5059 . 1N5062 1N5059 . 1N5062 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2005-09-20 Nominal current Nennstrom 6.3±0.1 Type 62.5±0.5 Ø 3±0.05 Ø 0.8±0.05 Dimensions - Maße [mm] 2A Repetitive peak reverse voltage Periodische Spitzensperrspannung
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Original
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1N5059
1N5062
DO-15
DO-204AC
UL94V-0
1N5062
1N5059
1n5062 DO-15
1N5062 diode
1N5060
1N5061
DO-204AC
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current
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Original
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1N5059,
1N5060,
1N5061,
1N5062
OD-57
MIL-STD-750,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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1N5060
Abstract: No abstract text available
Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current
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Original
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1N5059,
1N5060,
1N5061,
1N5062
OD-57
MIL-STD-750,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1N5060
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PDF
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1n5060v
Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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Original
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1N5059
1N5062
OD-57
MIL-STD-750,
1N5059
OD-57
1N5060
1N5061
D-74025
1n5060v
iSO 15765
1N5060
1N5061
1N5062
Diode 1N5062
1N5059 diode
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PDF
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1N5062V
Abstract: 1N5059 1N5061 1N5062 DIODE 1N5060 1N5060 500MG 1N5059 diode
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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Original
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1N5059
1N5062
MIL-STD-750,
1N5059
1N5060
1N5061
D-74025
07-Jan-03
1N5062V
1N5061
1N5062
DIODE 1N5060
1N5060
500MG
1N5059 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Description Polarity: Cathode indicated by a band Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading
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Original
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1N5059
1N5062
MILSTD-750,
1N5060
1N5061
1N5062
D-74025
09-Oct-00
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PDF
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1N5059
Abstract: 1N5062 1N506 diode 1n5059 1n5062 equivalent 1N5062 diode MBG044 1N5060 1N5061
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 20 Philips Semiconductors Product specification
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Original
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M3D116
1N5059
1N5062
1N5062
1N506
diode 1n5059
1n5062 equivalent
1N5062 diode
MBG044
1N5060
1N5061
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PDF
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diode 1n5059
Abstract: 1N5062 1N5061 1n5059 MBG044 1N5062 diode 1N5060 1N5059 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19 Philips Semiconductors Product specification
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Original
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M3D116
1N5059
1N5062
diode 1n5059
1N5062
1N5061
MBG044
1N5062 diode
1N5060
1N5059 diode
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PDF
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1N5062V
Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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Original
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1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
D-74025
13-Apr-05
1N5062V
1N5062
1N5060
1N5061
iso 15765
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PDF
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iSO 15765
Abstract: 1N5061 1N5062V 1n5062 equivalent 1n5059 1N5062 diode 1N5060 1N5062 DIODE 1N5060 iso 15765 2
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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Original
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1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
18-Jul-08
iSO 15765
1N5061
1N5062V
1n5062 equivalent
1N5062 diode
1N5060
1N5062
DIODE 1N5060
iso 15765 2
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PDF
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1N5062V
Abstract: 1N5059 1N5060 1N5061 1N5062
Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope
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Original
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1N5059
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
08-Apr-05
1N5062V
1N5060
1N5061
1N5062
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PDF
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave
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Original
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1N5059-1N5062
1N5059
1N5060
1N5061
1N5062
OD-57,
OD-57
MIL-PRF-19500,
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PDF
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1N5059
Abstract: 1N5060 1N5061 1N5062 1N5061 vishay
Text: 1N5059.1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose
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Original
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1N5059.
1N5062
1N5059
1N5060
1N5061
45K/W,
100K/W,
D-74025
24-Jun-98
1N5059
1N5060
1N5061
1N5062
1N5061 vishay
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PDF
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|
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SOD-57
Abstract: 1N5061 1N5062 1N5062
Text: 1N5061 THRU 1N5062 SINTERED GLASS JUNCTION AVALANCHE RECTIFIER VOLTAGE： ：600V to 800V CURRENT: 2.0A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability
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Original
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1N5061
1N5062
OD-57
OD-57
1N5061
SOD-57
1N5061 1N5062
1N5062
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PDF
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LN5061
Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
Text: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT
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OCR Scan
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1N5059
1N5060
400Mm.
LN5061
A14P Rectifier
1N5059 A14B
A14B
A14P
diode A14B
LN5060
ln5062
1N5059
1N5060
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PDF
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in5062
Abstract: A14P
Text: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO
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OCR Scan
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1N5059
1N5060ion
in5062
A14P
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PDF
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In5062
Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com
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OCR Scan
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43Dgg71
1N5059,
1N5060
1N5061,
1N5062
MIL-STD-19500
C/10a/
1N5060,
In5062
in5061
1N5062
1N5061
1N5060
1n5059 harris
JEDEC do-204
1N5059
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PDF
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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Original
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PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
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PDF
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DIODE 1N5060
Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
18-Jul-08
DIODE 1N5060
1n5060v
1N5060
Sinterglass
1N5059
1N5062
diode 1n5059
MIL-STD-750 METHOD 2026
1n5060 diode
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PDF
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1n5060
Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
1N5060
1N5062 diode
DIODE 1N5060
1N506
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PDF
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1N5062 diode
Abstract: 1N5060 1N5061 1N5061 vishay
Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading
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Original
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1N5059,
1N5060,
1N5061
1N5062
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
1N5059
1N5060
1N5062 diode
1N5061 vishay
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PDF
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amper 1N5061
Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
Text: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE
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OCR Scan
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400Mm.
amper 1N5061
LN5061
A14P Rectifier
A14B
diode A14A surface mount
A14P
Amper 1N5060
1n5062
diode A14A surface
diode A14B
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PDF
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diode A14A
Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
Text: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS
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OCR Scan
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1N5059-62
1N4245-49
1N5624-27
DT230
A14A-P
GER4001-7
A114A-M
A15A-N
A115A-M
DT23CF
diode A14A
diode A14A surface mount
LN5061
A14P Rectifier
A14P
A14B
LN5060
A14F
A14D 1n5060
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PDF
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