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Catalog Datasheet	MFG & Type	Document Tags	PDF
1N5819a Abstract: No abstract text available Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,	OCR Scan	1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a	PDF

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1N5819a

Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,

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1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a

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