Diode Equivalent 1N60
Abstract: No abstract text available
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability.
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3VD186600YL
3VD186600YL
O-251-3Ltype
250uA
Diode Equivalent 1N60
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Untitled
Abstract: No abstract text available
Text: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced
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3VD173600YL
3VD173600YL
O-92-3L
5245dies/wafer
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Diode Equivalent 1N60
Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan
Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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Original
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3VD186600YL
3VD186600YL
O-251-3Ltype
Diode Equivalent 1N60
1N60 MOS
1N60 SILAN
diode 1n60
1N60
silan
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Diode Equivalent 1N60
Abstract: diode 1n60 1N60 MOS 1N60
Text: 3VD169600YL 3VD169600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD169600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced
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Original
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3VD169600YL
3VD169600YL
O-92-3L
Diode Equivalent 1N60
diode 1n60
1N60 MOS
1N60
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PDF
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3VD186600YL
Abstract: 1N60
Text: 3VD186600YL 3VD186600YL 高压MOSFET芯片 描述 Ø 3VD186600YL为采用硅外延工艺制造的N沟道 增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD186600YL
3VD186600YL
3VD186600YLN
600VMOS
O-251-3L
1N60
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3VD173600YL
Abstract: 1N60 MOS 1N60
Text: 3VD173600YL 3VD173600YL 高压MOSFET芯片 描述 ¾ 3VD173600YL为采用硅外延工艺制造的N沟道 增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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Original
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3VD173600YL
3VD173600YL
3VD173600YLN
600VMOS
O-92-3L
5245dies/wafer
250AVDS
30VVDS
1N60 MOS
1N60
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PDF
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3VD169600YL
Abstract: 1N60 MOS 1N60
Text: 3VD169600YL 3VD169600YL 高压MOSFET芯片 描述 Ø 3VD169600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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Original
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3VD169600YL
3VD169600YL
3VD169600YLN
600VMOS
O-92-3L
600VVGS
1N60 MOS
1N60
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