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    3VD169600YL

    Abstract: 1N60 MOS 1N60
    Text: 3VD169600YL 3VD169600YL 高压MOSFET芯片 描述 Ø 3VD169600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3VD169600YL 3VD169600YL 3VD169600YLN 600VMOS O-92-3L 600VVGS 1N60 MOS 1N60 PDF

    Diode Equivalent 1N60

    Abstract: diode 1n60 1N60 MOS 1N60
    Text: 3VD169600YL 3VD169600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD169600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced


    Original     		3VD169600YL 3VD169600YL O-92-3L Diode Equivalent 1N60 diode 1n60 1N60 MOS 1N60 PDF