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    1N6096 Search Results

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    1N6096 Price and Stock

    Microchip Technology Inc 1N6096

    SCHOTTKY RECTIFIER
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    Microchip Technology Inc 1N6096 35 Weeks
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    GeneSic Semiconductor Inc 1N6096

    DIODE SCHOTTKY 40V 25A DO4
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    GeneSic Semiconductor Inc 1N6096R

    DIODE SCHOTTKY REV 40V 25A DO4
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    NAC 1N6096R 250
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    Navitas Semiconductor 1N6096

    Silicon Stud Rectifier - Schottky (Std Config) - 40V - 25A - DO-4
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    New Jersey Semiconductor Products, Inc. 1N6096

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    Bristol Electronics 1N6096 2,580 1
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    1N6096 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6096 America Semiconductor HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Original PDF
    1N6096 GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 25A DO4 Original PDF
    1N6096 International Rectifier Schottky Rectifier Original PDF
    1N6096 Micro Commercial Components 25 Amp Schottky 30 to 40 Volts Original PDF
    1N6096 Motorola Switch Mode Power Rectifiers Original PDF
    1N6096 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
    1N6096 America Semiconductor 1N6096 - HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Scan PDF
    1N6096 Diodes SCHOTTKY BARRIER RECTIFIERS Scan PDF
    1N6096 Microsemi 25 Amp Schottky Rectifier Scan PDF
    1N6096 Motorola Switchmode Datasheet Scan PDF
    1N6096 Motorola European Master Selection Guide 1986 Scan PDF
    1N6096 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N6096 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N6096 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6096 OPTEK Technology FAST RECOVERY RECTIFIERS Scan PDF
    1N6096 Unitrode International Semiconductor Data Book 1981 Scan PDF
    1N6096R America Semiconductor HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Original PDF
    1N6096R GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 25A DO4 Original PDF
    1N6096R Transys Electronics SCHOTTKY DIODES STUD TYPE 25 A Original PDF
    1N6096R America Semiconductor 1N6096 - HIGH POWER-SCHOTTKY RECTIFIER; IF::25A; case_package:DO4 Stud Devices Scan PDF

    1N6096 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features • High Surge Capability • Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified


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    PDF 1N6095 1N6096R 1N6095 1N6096

    1N6095

    Abstract: 1n6096
    Text: MCC 1N6095 thru 1N6096   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 25 Amp Schottky Barrier Rectifier 30 to 40 Volts Metal of siliconrectifier, majonty carrier conducton


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    PDF 1N6095 1N6096 1n6096

    1N6096

    Abstract: 1N6095
    Text: MCC 1N6095 thru 1N6096   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 25 Amp Schottky Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection


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    PDF 1N6095 1N6096 1N6096 1N6095

    1N6095

    Abstract: No abstract text available
    Text: 1N6095 thru 1N6096R Naina Semiconductor Ltd. Schottky Power Diode, 25A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AA DO-4 Maximum Ratings (TJ = 25oC, unless otherwise noted)


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    PDF 1N6095 1N6096R DO-203AA 125oC 1N6096

    Untitled

    Abstract: No abstract text available
    Text: 1N5829 R THRU 1N6096(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES STUD TYPE 25 A Features 25Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V VRRM DO-4 B Maximum Ratings N Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175


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    PDF 1N5829 1N6096 25Amp 1N5829( 1N5830( 1N6095( 1N5831( 1N6096( 1N5831

    Untitled

    Abstract: No abstract text available
    Text: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 30 V - 40 V IF = 25 A Features • High Surge Capability • Types from 30 V to 40V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.


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    PDF 1N6095 1N6096R 1N6095 1N6096 DO-203AA)

    32UNF-2A

    Abstract: lN609 1N6095 SD41 1N6096 N6095 DS6127
    Text: I 1N6095 1N6096 SD41 I SWITCHMODE POWER RECTIFIERS . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: I Guardring for Stress Low Forward 150°C Protection Voltage Operating Guaranteed


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    PDF 1N6095 1N6096 1N6095* 1N6096* 32uNF2A-sJ 32UNF-2A lN609 1N6095 SD41 1N6096 N6095 DS6127

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N6095-1N6096 25 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 2.0°C/W junction to Case


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    PDF 1N6095-1N6096 1N6095 1N6096 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: 1N6095 thru 1N6096R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 25 A Features • High Surge Capability • Types up to 40V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified


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    PDF 1N6095 1N6096R 1N6095 1N6096

    1N5829

    Abstract: 1N6095 1N6096 1N5830 1N5831
    Text: Transys 1N5829 R THRU 1N6096(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 25 A Features 25Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V VRRM DO-4 B Maximum Ratings N Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175


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    PDF 1N5829 1N6096 25Amp 1N5829( 1N5830( 1N6095( 1N5831( 1N6096( 1N5831 1N6095 1N5830 1N5831

    switching transistor 331

    Abstract: datasheets diode 1n6095 1N6096 C 331 Transistor DO-203AA schottky rectifier transistor C 331
    Text: PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N609. Units IF AV Rectangular 25* A 30/40* V IFSM @ 60Hz 400* A VF @ 80 Apk, TJ= 70°C 0.86* V TJ range - 65 to 125* °C


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    PDF 1N6095 1N6096 1N609. DO-203AA switching transistor 331 datasheets diode 1n6095 1N6096 C 331 Transistor DO-203AA schottky rectifier transistor C 331

    diode 1n6095

    Abstract: datasheets diode 1n6095 1N609 1N6095 1N6096 40HFL40S02 DO-203AA IRFP460
    Text: PD-2.331 rev. A 12/97 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N609. Units IF AV Rectangular 25* A 30/40* V IFSM @ 60Hz 400* A VF @ 80 Apk, TJ= 70°C 0.86* V TJ range - 65 to 125* °C


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    PDF 1N6095 1N6096 1N609. IRFP460 40HFL40S02 diode 1n6095 datasheets diode 1n6095 1N609 1N6095 1N6096 40HFL40S02 DO-203AA IRFP460

    Untitled

    Abstract: No abstract text available
    Text: 1N6096 asi SCHOTTKY BARRIER RECTIFIER PACKAGE STYLE D O - 4 DESCRIPTION: s The ASI 1N6096 is Designed for General Purpose and Switching Power Supply Applications. Y M B O MILLIMETERS L A 0.405 10.28 b 0.250 6.35 25 A Ave @ Tc = 70 °C V rw M 40 V Tj -65 °C t o +125 °C


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    PDF 1N6096 1N6096

    1N6095

    Abstract: No abstract text available
    Text: 1N6095 1N6096 SD41 MOTOROLA S C H O T T K Y B A R R IE R R E C T IF IE R S S W IT C H M O D E P O W ER R E C T IF IE R S 2 5 and 3 0 A M P E R E S 3 0 to 4 5 V O L T S u s in g t h e S c h o t tk y B a r r ie r p r in c ip le w it h a p la t in u m b a r r ie r m e ta l


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    PDF 1N6095 1N6096

    1N6096

    Abstract: No abstract text available
    Text: 1N6O96 asii SCHOTTKY BARRIER RECTIFIER PACKAGE STYLE DO- 4 DESCRIPTION: The ASI 1N6096 is Designed for General Purpose and Switching Power Supply Applications. MAXIMUM RATINGS If 25 A avg @ Te = 70 0C Vrw M 40 V Tj -65 °C to +125 0C Ts t g -65 0C to +125 0C


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    PDF 1N6O96 1N6096

    KH 2222

    Abstract: diode 1n6095 sd41 jc 817
    Text: 1N6095 1N6096 SD41 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using the Schottky Barrier principle with a platinum barrier metal. These state-ol-the-art


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    PDF 1N6095 1N6096 KH 2222 diode 1n6095 sd41 jc 817

    1N6095

    Abstract: No abstract text available
    Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


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    PDF 1N6095 1N6096

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER bSE » • 4ÖS54S2 DD172L4 2fl P D -2.331 International 1N6095 1 n6096 ^ R e c tifie r SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics 1N6095, 1N6096. Units lF AV Rectangular 25* A


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    PDF S54S2 DD172L4 n6096 1N6095, 1N6096. -65to125* D-229 D0172b7 NBU95

    1N6095

    Abstract: D227
    Text: PD-2.331 International S Rectifier 1N6095 1N6096 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics Characteristics lF AV Rectangular waveform V RRM 1N6095, 1N6096. Units 25* A 30/40* V ' fsm 6 ° Hz 400* A Vp ®80Apk,TJ-70°C


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    PDF 1N6095, 1N6096. 30/40erse D-229 1N6095 1N6096 D-230 D227

    USD3030C

    Abstract: No abstract text available
    Text: Schottkv Rectifiers Microsemi Division SBR2520 SBT2520 SBR2525 1N6095 SBR2530 SBT2530 USD2555C SBR2535 1N6096 SBR2540 SBT2540 1N6391 1N6391 JAN1N6391 JAN1N6391 JANTX1N6391 JANTX1N6391 JANTXV1N6391 JANTXV1N6391 SBR2545 SBT2545 1N6792 1N6792R 1N6793 1N6793R


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    PDF O-220 O-254 USD3030C

    1N6095

    Abstract: 1N6096 DO-203AA
    Text: 25 Amp Schottky Rectifier 1N60951N6096 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads. 3. Stud is Cathode. A B C D E F G H J M N P 1,3 .423 -.600 .422 .075 -.163


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    PDF 1N6095â 1N6096 DO-203AA 1N6095 1N6096 DO-203AA

    18CPQ100

    Abstract: 50HQ050 18CPQ030 18CPQ040 18CPQ050 18CPQ060 18CPQ090 30CPQ030 30CPQ040 30CPQ050
    Text: INTERNATIONAL RECTIFIER H E Schottky Rectifiers | 4flS5452 0010021 0 | -f-o'S-CL I 18 TO 60 AM PS Part Number ' f AV @ TC VRWM m (A) (°C) VFM 'h h ® T j = 125°C & •f m Rated VRW H (A) Max. T j (mA) <°C) Case Style T 0 -2 4 7 A A 18CPQ030 18CPQ040


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    PDF 4flS5452 18CPQ030 18CPQ040 18CPQ050 18CPQ060 18CPQ090 18CPQ100 TQ-247AA 30CPQ030 30CPQ040 50HQ050 30CPQ050

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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