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Vishay Siliconix IRFR1N60ATRPBF MOSFET N-CH 600V 1.4A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR1N60ATRPBF	Cut Tape	5,982		1	1 $2.27 10 $1.455 100 $2.27 1000 $0.72652 10000 $0.72652	Buy Now
	IRFR1N60ATRPBF	Digi-Reel	5,982		1	1 $2.27 10 $1.455 100 $2.27 1000 $0.72652 10000 $0.72652	Buy Now
	IRFR1N60ATRPBF	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.67265	Buy Now
New Advantage Corporation	IRFR1N60ATRPBF		20,000		1	1 - 10 - 100 - 1000 - 10000 $0.8143	Buy Now
Micro Commercial Components MCU01N60A-TP N-CHANNEL MOSFET, DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCU01N60A-TP	Cut Tape	4,875		1	1 $1.02 10 $0.639 100 $1.02 1000 $0.29139 10000 $0.29139	Buy Now
	MCU01N60A-TP	Digi-Reel	4,875		1	1 $1.02 10 $0.639 100 $1.02 1000 $0.29139 10000 $0.29139	Buy Now
	MCU01N60A-TP	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.25808	Buy Now
Mouser Electronics	MCU01N60A-TP		2,458			1 $0.63 10 $0.587 100 $0.396 1000 $0.279 10000 $0.207	Buy Now
Vishay Siliconix IRFR1N60APBF MOSFET N-CH 600V 1.4A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR1N60APBF	Tube	3,041		1	1 $2.27 10 $2.27 100 $1.03467 1000 $0.7857 10000 $0.625	Buy Now
Bristol Electronics	IRFR1N60APBF		22			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IRFR1N60APBF		2,250		1	1 - 10 - 100 $0.7095 1000 $0.7095 10000 $0.7095	Buy Now
Vishay Siliconix IRFR1N60ATRPBF-BE3 MOSFET N-CH 600V 1.4A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR1N60ATRPBF-BE3	Cut Tape	1,869		1	1 $2.27 10 $1.455 100 $2.27 1000 $0.72652 10000 $0.72652	Buy Now
	IRFR1N60ATRPBF-BE3	Digi-Reel	1,869		1	1 $2.27 10 $1.455 100 $2.27 1000 $0.72652 10000 $0.72652	Buy Now
Vishay Siliconix IRFU1N60APBF MOSFET N-CH 600V 1.4A TO251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFU1N60APBF	Tube	862		1	1 $2.1 10 $2.1 100 $0.95213 1000 $0.72004 10000 $0.5625	Buy Now
RS	IRFU1N60APBF	Bulk			10	1 - 10 $0.67 100 $0.64 1000 $0.58 10000 $0.58	Get Quote
Bristol Electronics	IRFU1N60APBF		11,996			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	IRFU1N60APBF		611			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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1N60A Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
1N60A	Microsemi	Gold Bonded Germanium Diode	Original	PDF
1N60A	BKC International	30 V, 150 mA, gold bonded diode	Scan	PDF
1N60A	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
1N60A	Unknown	GE Transistor Specifications	Scan	PDF
1N60A	Unknown	Cross Reference Datasheet	Scan	PDF
1N60A	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N60A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N60A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
1N60A	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N60A	Semitronics	Germanium Diodes / Germanium Rectifiers	Scan	PDF

1N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091
gold detectors circuit Abstract: 1N60A dr 25 germanium diode M/"TV-IF Filter" Text: Gold Bonded Germanium Diodes 1N60A Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications D O -7 G lass Package AM/FM detectors Ratio detectors FM discriminators 0.018 -0.022 "	Original	PDF	1N60A gold detectors circuit 1N60A dr 25 germanium diode M/"TV-IF Filter"
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091
1n60ag Abstract: 1N60A Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091 1n60ag
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091
1N60AL Abstract: 1N60A UTC 1N60AL 1N60AL-T92-B Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 1N60AL-T92-B
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091.
1N60AL Abstract: UTC 1N60AL 1N60A 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091
1n60ag Abstract: 1N60A 1n60al T92 DIODE XT92 Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	1N60A 1N60A QW-R502-091 1n60ag 1n60al T92 DIODE XT92
1N60 mosfet Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92 Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)	Original	PDF	OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	QW-R502-052

1N34A reverse recovery Abstract: No abstract text available Text: SEMICONDUCTOR TECHNOLOGY^ OSE I \| fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge	OCR Scan	PDF	1N34A 1N60A 1N128A 1N198A 1N251 1N270 1N277 1N695A 1N772A 1N933 1N34A reverse recovery
to3a Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode Text: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A	OCR Scan	PDF	DQDD35S 1N60A 150mA 300nS to3a 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
Germanium diode Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes	OCR Scan	PDF	1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N48 diode Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4 Text: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 4 9 D » e \| 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M	OCR Scan	PDF	00034e] 1N34A at-10V at-25 1N38A 1N38B -100V at-50V at-50 1N52A 1N48 diode diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1Ns4
1n48 H Abstract: No abstract text available Text: CRIMSON DeT\| S S l M C H b □ □ □ 0 3 LH S E M I C O N D U C T O R INC 2514096 CRIMSON SEMICONDUCTOR INC 99D 00349 D T-ot^o'l GERMANIUM DIODE TYPE PEAK REVERSE VO LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FORW ARD CURRENT A T 1 V O LT M A X IM U M	OCR Scan	PDF	1N34A at-25 1N38A at-100 1N38B 1N52A 1N54A 1N57A 1N58A 1n48 H
1Nu5 Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128 Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p	OCR Scan	PDF	1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
IN270 Abstract: 1N47S6A zener 1n34a 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A diodes 1N34A color 1N4734A Text: TAIWAN LITO N E L E C T R O N I C M^E D • ZENER DIODES 1W ZENER DIO DES/DO -41 Device Type Nominal Zener Voltage V z <§> IzT Test Current IM IE C 0 0 3 3 1 ^ 5 0 Ü G 4 G 7 3 07*1 ■ T L I T ^ „ 13 ¡B iffi OPERATING/STORAGE TEM PERA TU RE -65°C to +200°C	OCR Scan	PDF	DIODES/DO-41 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A VR/25Â IN270 1N47S6A zener 1n34a diodes 1N34A color
RED Color band DIODES GLASS Abstract: diodes 1N34A color N4009 1n270 1N34A reverse recovery 1N4009 RED Color band DIODES 1N295A 1N34A 1N34A do-35 Text: diodes T4 INCORPORATED DOODETfl 1 1~~ D D I 20407^3 s ~ BUTTON RECTIFIERS OPERATING AND STORAGE TEMPERATURE -6 5 °C to +175°C PRV V PK Maximum Average Rectified Current Half-Wave Resistive Load 60Hz lo > > < TYPE Maximum Peak Reverse Voltage Maximum Reverse	OCR Scan	PDF	RA2505 RA251 RA252 RA253 RA254 DI750 1N914 1N914A 1N914B 1N4148 RED Color band DIODES GLASS diodes 1N34A color N4009 1n270 1N34A reverse recovery 1N4009 RED Color band DIODES 1N295A 1N34A 1N34A do-35
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan	PDF

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1N60A Price and Stock

Vishay Siliconix IRFR1N60ATRPBF

Micro Commercial Components MCU01N60A-TP

Vishay Siliconix IRFR1N60APBF

Vishay Siliconix IRFR1N60ATRPBF-BE3

Vishay Siliconix IRFU1N60APBF

1N60A Datasheets (10)

1N60A Datasheets Context Search

Untitled

gold detectors circuit

Untitled

Untitled

1n60ag

Untitled

1N60AL

Untitled

Untitled

1N60AL

Untitled

1n60ag

1N60 mosfet

Untitled

1N34A reverse recovery

to3a

Germanium diode

IC HXJ 2038

1N48 diode

1n48 H

1Nu5

IN270

RED Color band DIODES GLASS

transistor 2N4