IRF610
Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Text: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power
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IRF610-613
MTP2N18/2N20
O-22QAB
IRF610
IRF611
IRF612
IRF613
MTP2N18
NITP2N20
IRF610/612
IRF610
IRF612
irf P 611
IRF611
IRF613
MTP2N18
MTP2N20
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IRF013
Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Text: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRF610/611/612/613
O-220
IRF610
IRF611
IRF612
IRF613
IRF013
D33A
power MOSFET IRF610
1RF610
irf610 samsung
irf610 mosfet
IRF61Q
613 33A
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smd 33a
Abstract: 1RF610 33A SMD DIODE smd diode JJ AN-994 IRF610S SMD-220
Text: International IS Rectifier PD-9.899 IRF610S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^ D S o n = 1 -5 ß
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IRF610S
SMD-220
smd 33a
1RF610
33A SMD DIODE
smd diode JJ
AN-994
IRF610S
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IRF610
Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
Text: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power
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IRF610-613
MTP2N18/2N20
IRF610/612
NITP2N20
MTP2N18
IRF611/613
PCU100F
IRF610
1RF610-613
1RF610
IRF612
IRF611
IRF613
MTP2N20
irf 613
IRF610-613
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Untitled
Abstract: No abstract text available
Text: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*
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IRF610/611/612/613
IRF61
OR/611R/612R/613R
IRF610,
IRF611,
IRF612,
IRF610R,
IRF611R,
IRF612R
F613R
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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IRF612R
Abstract: IRF610R IRF611R IRF613R
Text: _ Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2 .0 A an d 2.5 A , 1 5 0 V -2 0 0 V ros on = 1 .5 0 a n d 2 .4 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■
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IRF610R,
IRF611R,
IRF612R,
IRF613R
50V-200V
IRF612R
IRF613R
aCS-421560
IRF610R
IRF611R
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1RF610
Abstract: IRFS10 IRF611 IRF N-Channel Power MOSFETs IRF612 IRF613 IRF610R IRF611R IRF612R IRF613R
Text: 2 H A R R I S I R I R F 6 1 O F R 6 1 / 6 / 6 1 1 R 1 / 6 1 1 / 6 2 1 R 2 / 6 / 6 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package TO -22D A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • l'DSion) = 1-5H and 2.4i l
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IRF610/611/612/613
IRF61
OR/611R/612R/613R
1RF610,
IRF611,
IRF612,
IRF613
IRF610R,
IRF611R,
IRF612R
1RF610
IRFS10
IRF611
IRF N-Channel Power MOSFETs
IRF612
IRF610R
IRF611R
IRF613R
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qk1 motor
Abstract: 1RF610 irf611 RF612 IRF612
Text: HARRIS I R F 6 1 , I R F 6 1 , 1 S E M I C O N D U C T O R I R F 6 1 2 , I R F 6 1 3 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6 A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate
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1RF610,
IRF611,
RF612,
RF613
RF613
qk1 motor
1RF610
irf611
RF612
IRF612
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1rf610
Abstract: f613 power MOSFET IRF610 IRF613
Text: 2 H A R R IS IRF610/611/612/613 IRF61OR/611R/612R/613R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • fDS on) = l-S ft a nd 2.417 • Single Pulse Avalanche Energy Rated*
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IRF610/611/612/613
IRF61OR/611R/612R/613R
IRF610,
IRF611,
IRF612,
IRF610R,
IRF611R,
IRF612R
IRF613R
F610R
1rf610
f613
power MOSFET IRF610
IRF613
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