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IDEC Corporation CW1S-21E01 SWITCH SELECTOR 2POS
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IDEC Corporation CW1S-21E21 SWITCH SELECTOR 2POS
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IDEC Corporation CW1S-21E12 SWITCH SELECTOR 2POS
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IDEC Corporation CW1S-21E11 SWITCH SELECTOR 2POS
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Master Electronics	CW1S-21E11					1 $32.53 10 $30.44 100 $25.85 1000 $24.78 10000 $24.78	Buy Now
Sager	CW1S-21E11				1	1 $34.28 10 $31.64 100 $28.57 1000 $28.57 10000 $28.57	Buy Now
IDEC Corporation CW1S-21E02 SWITCH SELECTOR 2POS
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Newark	CW1S-21E02	Bulk			1	1 $40.57 10 $40.57 100 $33.4 1000 $32.27 10000 $32.27	Buy Now
Master Electronics	CW1S-21E02					1 $32.53 10 $30.44 100 $25.85 1000 $24.78 10000 $24.78	Buy Now
Sager	CW1S-21E02				1	1 $34.28 10 $31.64 100 $28.57 1000 $28.57 10000 $28.57	Buy Now

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1S21E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3609 Abstract: ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q .2 2.9- a 3 FEATURES: • Low Noise Figure, High Gain. • N F=1.ldB, IS2 1 e \|2=13dB f=lGHz +a25 MAXIMUM RATINGS 1 .5 0 — 0 .1 5 (Ta=25°C) h o CHARACTERISTIC	OCR Scan	2SC3609 1S21el2 500MHz 2SC3609 ic power 22E 12E MARKING power 22E power 22E IC power Ic 22e	PDF
2SC3745 Abstract: MARKING CL3 Text: 2SC3745 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF-C BAND LOW NOISE AMPL I F I E R APPLICATIONS. + 0.2 2.9- Q 3 FEATURES: • High Gain • Low Noise Figure NF=2.OdB Typ. • High fT fT=6.5GHz(Typ.) 4 ¿r LL \|s2ie\|2=12dB(Typ.) d o 0> -} 3 1 1 _.J_ 1	OCR Scan	2SC3745 10raA 10niA -J150 -J100 2SC3745 MARKING CL3	PDF
CQ 817 Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860 Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.	OCR Scan	EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580	PDF
HXTR-3101 Abstract: No abstract text available Text: HEWLETT-PACKARDi CNPNTS SOE D B M447SÔ4 0005523 7 El w m h ewlett mi.E3 PA C K A R D T 'H -O Ì G eneral Purpose Transistors HXTR-3001 Chip Technical Data HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 Features D escription • H ig h G ain	OCR Scan	M447SÃ HXTR-3001 HXTR-3101, 2N6838 HXTR-3103, HSMX-3131 HSMX-3151 IS21E12 HXTR-3101 HXTR-3101	PDF
transistor zo 607 Abstract: 2SC5226 FC156 ZS22 sn 0426 FC 0137 transistor z 0607 ao41 ic 2429 Text: Ordering number : EN 5432 FC156 No.5432 i NPN Epitaxial Planar Silicon Composite Transistor SMIYO i High-Frequency Low-Noise Amp, Differential Amp Applications F eatures • Composite type with 2 transistors contained in the CP package currently in use, improving the	OCR Scan	FC156 2SC5226, 20with transistor zo 607 2SC5226 ZS22 sn 0426 FC 0137 transistor z 0607 ao41 ic 2429	PDF
cq 0765 Abstract: ic MARKING FZ 2SC4854 ZS12 ZS22 AX-9521 Text: Ordering num ber: EN 4 5 7 9 _ 2SC4854 NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amp Applications F e a tu re s • Low-voltage, low-current operation : f j = 5GHz typ. VCE = IV, Ic = 1mA : I S21e I2= 7dB typ (f = 1GHz).	OCR Scan	EN4579 2SC4854 cq 0765 ic MARKING FZ 2SC4854 ZS12 ZS22 AX-9521	PDF
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr	PDF
transistor bf 458 Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz	OCR Scan	NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3	PDF
NPN planar RF transistor Abstract: No abstract text available Text: Tem ic BFP280T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Jk For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features • Low power applications	OCR Scan	BFP280T 1S21e 17-Apr-96 NPN planar RF transistor	PDF
2SC1253 Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733 Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for	OCR Scan	MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733	PDF
transistor CQ 735 Abstract: 2SC4853 ZS21 4578a Text: Ordering number:EN 4578A SAMYO N0.4578A 2SC4853 NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current High-Frequency Amp Applications i F eatu res • Low-voltage, low-current operation : fr=5G H z typ. VCE = IV, Ic = 1mA : I S21e I2= 7dB typ (f = 1GHz).	OCR Scan	2SC4853 transistor CQ 735 2SC4853 ZS21 4578a	PDF
CQ 523 Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523 Text: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the	OCR Scan	EN5433 FC157 FC157 2SC5245, CQ 523 cq 531 mc 5357 Z0 607 2SC5245 s22L transistor but 607 cq 765 NPN/CQ 523	PDF
HXTR-3101 Abstract: HXTR-3121 SAJ 210 equivalent HXTR-3185 HXTR3101 HXTR-3101TX HXTR3121 2N6838 saj 141 HSMX-3131 Text: HEWLETT-PACKARD-. CMPNTS EOE D B M4M7SA4 0005553 7 E9 T/llft HEWLETT m L /ia P A C K A R D r - i h o i G en eral P u rp o se T ran sistors HXTR-3001 C hip Technical D ata HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 F eatu res D escrip tion	OCR Scan	HXTR-3001 HXTR-3101, 2N6838 HXTR-3103, HSMX-3131 HSMX-3151 IS21EIa HXTR-3103 1S21E12 MIL-S-19500, HXTR-3101 HXTR-3121 SAJ 210 equivalent HXTR-3185 HXTR3101 HXTR-3101TX HXTR3121 2N6838 saj 141	PDF
F527S Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553 Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.	OCR Scan	Cas-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> F527S 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553	PDF

1521e Abstract: C4931 2SA1763 2SC4867 2SC4918 c493 2SA1883 2SC4400 2SC4452 2SC4931 Text: SAfiYO S M C P S u p e r Mini C h i p P a c k T r a n s i s t o r s e r i e s The newly developed Sanyo SMCP package can make the sets more compact and slimmer because of a super mini package. We have various products for such applications as shown below. In addition, we can provide you with reel-style packing	OCR Scan	2SA1965 2SC4919 2SC4851 MT990324TR D024bl2 1521e C4931 2SA1763 2SC4867 2SC4918 c493 2SA1883 2SC4400 2SC4452 2SC4931	PDF
fr 0204 Abstract: 2SC5347 ZS21 ZS22 TA-0689 Text: O rdering num ber: EN 5512A 2SC5347 N0.5512A NPN Epitaxial Planar Silicon Transistor SAMYO i High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications F eatu res • High frequency medium output amplification: fr=4.7GHz typ f= 1GHz .	OCR Scan	2SC5347 250mm2 IS11I IS22I fr 0204 2SC5347 ZS21 ZS22 TA-0689	PDF
2SC1253 Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12 Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in	OCR Scan	MS7414 NE74000 NE74014 NE74020 NE740 2SC1253 2SC1251 NEC k 2134 transistor NE74020 NE90115 CTO-39 2143E 1321E12	PDF
5541a Abstract: 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484 Text: Ordering number: EN5541À 2SC5375 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amp Applications F eatu re s •High gain : I S21e I 2= lOdB typ f= 1GHz . • High cutoff frequency : fr = 5.2GHz typ. A bsolute M axim um E atin g s at Ta = 25°C	OCR Scan	EN5541Ã 2SC5375 10VfIE 5541a 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484	PDF
2SC2407 Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592 Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli	OCR Scan	L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592	PDF
transistor d 13009 Abstract: IC 566 vco transistor j 13009 IC 8085 pin Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•— 1.25 ± 0.1 -■	OCR Scan	UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin	PDF
telephone IC panasonic Abstract: No abstract text available Text: Panasonic Transistor 2SC5473 Tentative Silicon NPN epitaxial planer type For low -voltage low -noise high-frequency oscillation • U nit: mm Features • High transition frequency fT. • High gain of 8.9dB and low noise of 1.8dB at 3V. • Optimum for RF am plification of a portable telephone and	OCR Scan	2SC5473 1S21e telephone IC panasonic	PDF
2SC2407 equivalent Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600 Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The	OCR Scan	L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600	PDF
marking 83 Abstract: BFP183T Text: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features	OCR Scan	BFP183T 17-Apr-96 marking 83 BFP183T	PDF
marking RH Abstract: No abstract text available Text: Tem ic BFR183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor £ Electrostatic sensitive device. Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 inA. Features	OCR Scan	BFR183T 1S21e 17-Apr-96 marking RH	PDF

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1S21E Price and Stock

IDEC Corporation CW1S-21E01

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1S21E Datasheets Context Search

2SC3609

2SC3745

CQ 817

HXTR-3101

transistor zo 607

cq 0765

70H40

transistor bf 458

NPN planar RF transistor

2SC1253

transistor CQ 735

CQ 523

HXTR-3101

F527S

1521e

fr 0204

2SC1253

5541a

2SC2407

transistor d 13009

telephone IC panasonic

2SC2407 equivalent

marking 83

marking RH