Untitled
Abstract: No abstract text available
Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)
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MT3S150P
SC-62
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Untitled
Abstract: No abstract text available
Text: STA3073F PNP Silicon Transistor Applications PIN Connection • Power amplifier application High current switching application Features : : High collector breakdown voltage VCEO=-120V Low collector saturation voltage VCE sat =-0.5V(Max.) SOT-89
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STA3073F
-120V
OT-89
KSD-T5B032-000
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2sk3944
Abstract: No abstract text available
Text: 2SK3944 注文コード No. N 8 3 3 0 2SK3944 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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2SK3944
250mm2
IT07495
IT09799
IT09800
IT09794
2sk3944
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Untitled
Abstract: No abstract text available
Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SC3607
-j250
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Untitled
Abstract: No abstract text available
Text: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process
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RN5001
RN5001)
RN6001
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE P OWE R A M P L I F I E R 2SC4539 APPLICATIONS P O WE R S W I T C H I N G A P P L I C A T I O N S Low Saturation Voltage : V C E s a t = 0 .5 V ( M a x .) (Ic =700mA) High Speed Switching Time: t stg=0.3ns Small Flat Package
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2SC4539
700mA)
2SA1734
100mA
20/is
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IC JRC circuits
Abstract: No abstract text available
Text: 2SC4705 No.3484 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications High hpg A p p licatio n s • Low-frequency general-purpose amp, drivers, m uting circuits Features • High DC current gain (hpE = 800 to 3200) • Low collector-to-emitter saturation voltage : Vce (sat)S 0.5V max
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2SC4705
100mA,
100mA
7190MH
IC JRC circuits
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Untitled
Abstract: No abstract text available
Text: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package
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2SA1735
-500mA)
2SC4540
-10mA,
-100mA
-700mA
-500mA,
-25mA
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ic power 22E
Abstract: power 22E IC 12E MARKING
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC
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2SC3607
IS21e
CL4-a05
ic power 22E
power 22E IC
12E MARKING
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE RN5003 Unit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. P O W ER SW ITCH IN G APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process
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RN5003
RN6003
250mm2
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Untitled
Abstract: No abstract text available
Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density
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FP205
FP205
2SA1416
2SC3646,
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Untitled
Abstract: No abstract text available
Text: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage
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2SK1724
10//S,
250mm2X
31893TH
A8-7831
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2097a
Abstract: No abstract text available
Text: O rdering number :E N 4 5 3 6 SA\YO j No.4536 ¡j_ _ FP209 NPN Epitaxial Planar Silicon Transistor Driver Applications F eatu res • Composite type with 2 transistors NPN contained in one package,facilitating
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FP209
FP209
2SD1621
250mm2X0
250mm2X
53094TH
BX-0215
20lBl
20lB2=
2097a
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AX8896
Abstract: No abstract text available
Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage
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2SJ287
250mm2X
250mA
----10V
32593TH
AX-8896
AX8896
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE RN5002 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. i f 6 MAX- PO W ER SW IT C H IN G APPLICATIONS. 0 .4 ± 0 .05 1.7 MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process
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RN5002
RN6002
--10V,
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EN4539
Abstract: SB0703C
Text: I Ordering number:EN4539 _ FP301 TR : NPN Epitaxial Planar Silicon Transistor No.4539 SMÊYO SBD : Schottky B arrier Diode i DC/DC Converter Applications F eatures • Composite type with 2 devices NPN transistor and Schottky barrier diode contained in one package,
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EN4539
FP301
2SD1621
SB07-03C
250mm2X
EN4539
SB0703C
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2088a
Abstract: No abstract text available
Text: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,
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FP102
FP102
2SB1396
SB07-03C,
700mA
100mA
250mm2X0
20Ib2
2088a
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2sb1302
Abstract: No abstract text available
Text: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage
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2SB1302
250mm2
D268M0/4097TA
2SB1302
-10FA
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)
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2SC2873
2SA1213
4-Q05
50BASE--
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MARKING dk
Abstract: 2sd1628
Text: ^ O r d e r in g num ber : EN 1 7 8 1 A 2SD1628 SA\YO NPN Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.
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2SD1628
250mm
10lB2
5277KI/3045MW
250mm2*
MARKING dk
2sd1628
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN 4494 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransisto rs SA%YO Push-Pull Circuit Applications Features • Com posite type w ith a PN P tran sisto r and an N PN tran sisto r in one package, facilitating high-density m ounting.
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FP205
FP205
2SA1416
2SC3646,
--10Ij
--400mA
250mm2
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Transistor B C 458
Abstract: c458 2sa1766
Text: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity
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3182B
250mm2
2SA1766
1200MO/6279MO
Transistor B C 458
c458
2sa1766
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8897
Abstract: No abstract text available
Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage
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2SJ288
10//S,
250mm2X
VQD--30V
250mA,
--500mA,
31893TH
AX-8897
8897
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter
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2SB1325/2SD1999
2SB1325
250mm2x
150mA
7149MO
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