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STH60N05 Abstract: No abstract text available Text: * SGS-THOMSON L[IOT MS r J STH60N05 STH60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N05 STH60N05FI V dss R DS on Id 50 V 50 V 0.023 Ï2 0.023 n 60 A 36 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STH60N05 STH60N05FI ATT218 STH60N05/FI	PDF
BUV48I Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47 Text: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,	OCR Scan	BUX47/V47/V47FI BUX47A/V47A/47AFI BUX47/A, BUV47/A, BUV47FI/AFI O-218 SOWATT218 BUX47 BUV47 BUV48I BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a	PDF
Untitled Abstract: No abstract text available Text: di S G S -T H O M S O N RflD B»ilL[lCTK KlölE STW7N A100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss RoS(on Id STW7NA100 STH7NA100FI 1000 V 1000 V < 1 .7 0 < 1.7 n 7A 4.3 A • . . ■ . ■ TYPICAL Ros(on) = 1.45 Q ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STW7NA100 STH7NA100FI	PDF
transistor 352 AH Abstract: No abstract text available Text: HZJ SGS-THOMSON IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on IRFP350FI 400 V 0.3 0 Id 10 A • HIGH VOLTAGE - FOR OFF-LINE SNIPS • HIGH CURRENT - FOR SMPS UPTO 350W • ULTRA FAST SWITCHING - FOR OPERATION AT > 100KHZ • EASY DRIVE - REDUCES SIZE AND COST	OCR Scan	IRFP350FI 100KHZ ISOWATT218 500ms transistor 352 AH	PDF
BUX98PI Abstract: BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677 Text: SELECTION GUIDE BY PACKAGE OPAK IPAK % DEVICE TYPE VcBO V ceO NPN PNP V MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 IIJ m t2 T 4 MJD31CT4 «J012W 4 MJD47T4 MJ0340T4 MJD50T4 MJD210T4 MJD2955T4 MJD32BT4 MJ045H11T4 STD910T4 MJD32CT4 MJD127T4 MJD350T4 BULD118-1	OCR Scan	MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 MJD31CT4 J012W MJD47T4 MJ0340T4 MJD50T4 BUX98PI BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677	PDF
SGSF32 Abstract: transistor f421 F421 Transistor Text: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY	OCR Scan	SGSF321/IF321 SGSF421/IF421 70kHz 500ms SGSF32 transistor f421 F421 Transistor	PDF
transistor BU 921 T Abstract: 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920 Text: 7qsqg37 0056575 □ • / T ^ 3 3 ^ ' 2 . ct SGS-THOMSON bÜ IIS fÆ BU922/P/PFI/T S G S-TH0MS0N 3QE D HIGH VOLTAGE POWER DISSIPATION . HIGH VOLTAGE POWER DARLINGTON ■ AUTOMOTIVE IGNITION APPLICATIONS ■ HIGH CURRENT DESCRIPTION The BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/BU922PFI and BU920T/921T/922T	OCR Scan	7qHqS37 BU922/P/PFI/T BU920/921/922, BU920P/921P/922P, BU920-PFI/BU921PFI/BU922PFI BU920T/921T/922T OT-93 ISOWATT218 O-220 O-218) transistor BU 921 T 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920	PDF
IF465 Abstract: F465 SGSF465 SGSF465-SGSIF465-SGSF565 lk 977 transistor npn high speed switching 5A 600v sgs transistors NPN Transistor 450v 1A Text: r r S G S -T H O M S O N 7 # « i m i i O T O M i E S S G S G S F 4 6 5 S J F 4 6 5 / F 5 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS HIGH SWITCHING SPEED NPN POWER TRANSISTORS HOLLOW EMITTER FOR FAST SWITCHING HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS 50kHz SWITCHING SPEED WITH EASY	OCR Scan	SGSF465 SGSIF465/F565 50kHz be-SGSF565 1SOWATT218 ISOWATT218 500ms IF465 F465 SGSF465-SGSIF465-SGSF565 lk 977 transistor npn high speed switching 5A 600v sgs transistors NPN Transistor 450v 1A	PDF