WELWYN c21
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous
|
Original
|
AFT26HW050S
AFT26HW050SR3
AFT26HW050GSR3
AFT26H050W26SR3
7/2013Semiconductor,
WELWYN c21
|
PDF
|
RA07M4047MS
Abstract: rara RA07M4047M
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4047 RA07M4047M 07M4047MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier
|
Original
|
RA07M4047M
RA07M4047MSA
07M4047
400-470MHz
RA07M4047MSA
470-MHz
RA07M4047MS
rara
RA07M4047M
|
PDF
|
RA07M1317MS
Abstract: RA07M1317M RF TRANSISTOR 1 WATT 07M1317
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M1317 RA07M1317M 07M1317MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier
|
Original
|
RA07M1317M
RA07M1317MSA
07M1317
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MS
RA07M1317M
RF TRANSISTOR 1 WATT
07M1317
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566785 345667859 RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier
|
Original
|
889-941MHz
RA03M8894M
941-MHz
RA03M8894M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566789 34566789A RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier
|
Original
|
234566789A
440-520MHz
RA07N4452M
520-MHz
RA07N4452M
|
PDF
|
RA07M4452M
Abstract: generator 4.20 mA
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
|
Original
|
RA07M4452M
RA07M4452MSA
07M4452
440-520MHz
RA07M4452MSA
520-MHz
RA07M4452M
generator 4.20 mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier
|
Original
|
806-870MHz
RA03M8087M
870-MHz
RA03M8087M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456364 1234563647 345636478 RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier
|
Original
|
400-470MHz
RA07N4047M
470-MHz
RA07N4047M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536378 345363789 RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
68-88MHz
RA07H0608M
88-MHz
RA07H0608M
|
PDF
|
RA08N1317M
Abstract: RA08N1317M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317 RA08N1317M 08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
|
Original
|
RA08N1317M
08N1317
135-175MHz
RA08N1317M
175-MHz
RA08N1317M-101
|
PDF
|
marking GG
Abstract: RA07H4452M RA07H4452M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452 RA07H4452M 07H4452M RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
RA07H4452M
07H4452
440-520MHz
RA07H4452M
520-MHz
marking GG
RA07H4452M-101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456678 1234566789 34566789A RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
234566789A
440-520MHz
RA07H4452M
520-MHz
RA07H4452M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456678 1234566785 3456678592A 92A OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
|
Original
|
23456678592A
440-520MHz
RA07M4452MSA
520-MHz
RA07M4452MSA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536375 345363758 RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
66-88MHz
RA07M0608M
88-MHz
RA07M0608M
|
PDF
|
|
|
RA07H3340M-101
Abstract: marking GG RA*3340 RA07H3340M
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340 RA07H3340M 07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
RA07H3340M
07H3340
330-400MHz
RA07H3340M
400-MHz
RA07H3340M-101
marking GG
RA*3340
|
PDF
|
RA07M1317MS
Abstract: C 829 transistor
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456764 1234567645 34567645829 829 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier
|
Original
|
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MSA
RA07M1317MS
C 829 transistor
|
PDF
|
RA07H0608M-101
Abstract: RA07H0608M
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608 RA07H0608M 07H0608M RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
RA07H0608M
07H0608
68-88MHz
RA07H0608M
88-MHz
RA07H0608M-101
|
PDF
|
RA08H1317
Abstract: RA08H1317M RA08H1317M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
|
Original
|
RA08H1317M
08H1317
135-175MHz
RA08H1317M
175-MHz
RA08H1317
RA08H1317M-101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456673 1234566738 345667389 RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module
|
Original
|
330-400MHz
RA07H3340M
400-MHz
RA07H3340M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456364 1234563645 34563645728 728 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier
|
Original
|
400-470MHz
RA07M4047MSA
470-MHz
RA07M4047MSA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456768 1234567689 34567689A RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
|
Original
|
234567689A
135-175MHz
RA08H1317M
175-MHz
RA08H1317M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456768 1234567689 34567689A RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
|
Original
|
234567689A
135-175MHz
RA08N1317M
175-MHz
RA08N1317M
|
PDF
|
mosfet mttf
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT18S230S Rev. 2, 3/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
|
Original
|
AFT18S230S
AFT18S230SR3
mosfet mttf
|
PDF
|
AFT21S230S
Abstract: aft21s232s C5750X7S2A106M
Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.
|
Original
|
AFT21S230S
AFT21S230SR3
AFT21S232SR3
aft21s232s
C5750X7S2A106M
|
PDF
|
