AN0005
Abstract: CHM1290 CHM1290REF RO4003 microwave IC
Text: CHM1290REF 20-30GHz SUB-HARMONICALLY PUMPED MIXER GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a multi-function chip which integrates a self biased LO buffer amplifier and a sub-harmonic diode mixer for 2LO
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CHM1290REF
20-30GHz
DSCCHM1290REF2239
-27-Aug
AN0005
CHM1290
CHM1290REF
RO4003
microwave IC
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BAR63-02W
Abstract: AN049 BAR63 BAR81W SCD80 STEP71
Text: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 4 9 DECT Transmit - Receiver Switch Using Ultra Small PIN Diodes R F & P r o t e c ti o n D e v i c e s Edition 2006-10-11 Published by Infineon Technologies AG
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DECT transmitter siemens
Abstract: BAR63 BAR63-04 DECT siemens SIEMENS MICROWAVE RADIO 8 GHz 6 GHz SMD PIN diode
Text: Knut Brenndörfer ● Jörg Lützner Antenna switches with PIN diodes for digital mobile communications In handhelds for digital mobile and cordless telephone systems, such as GSM and DECT, PIN diodes are starting to replace conventional duplex filters in the transmit/receive switch. For this
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FR4 substrate antenna
Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
Text: Application Note No. 049 Discrete & RF Semiconductors DECT Transmit - Receive Switch Using Ultra Small PIN Diodes This application note covers a redesign of a PIN diode switch introduced in application note number 007. It uses Diodes in SCD80 and SOT343 package,
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SCD80
OT343
BAR63
BAR81W
150pF
89GHz
FR4 substrate antenna
BAR63-02W
BAR63
BAR81W
siemens diodes
DECT siemens
140FF
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diode smd marking SOD323 5-6
Abstract: 20 GHz SMD PIN diode 20 GHz PIN diode smd marking blue 6 GHz SMD PIN diode BAR50-03W
Text: Diodes SMD Type Silicon PIN Diodes BAR50-03W SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz +0.1 2.6-0.1
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BAR50-03W
OD-323
diode smd marking SOD323 5-6
20 GHz SMD PIN diode
20 GHz PIN diode
smd marking blue
6 GHz SMD PIN diode
BAR50-03W
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MO-220
Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
Text: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
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CHE1270-QAG
5-44GHz
CHE1270-QAG
E1270
CHE1270
5-44GHz
DSCHE1270-QAG0329
MO-220
AN0017
CHE1270
esd protection smd
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type General Purpose PIN Diode BAP1321-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches ● Low diode capacitance +0.1
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BAP1321-03
OD-323
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type General Purpose PIN Diode BAP63-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High speed switching for RF signals +0.1 1.3-0.1 ● Low diode capacitance ● Low diode forward resistance +0.1 2.6-0.1 1.0max
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BAP63-03
OD-323
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MIL-STD-1686C
Abstract: 24GHZ AN0017
Text: CHV2411aQDG RoHS COMPLIANT Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC In QFN package Description The CHV2411a-QDG is a monolithic multifunction for frequency generation. It integrates a X-band “push-push” oscillator with frequency control VCO thanks to basecollector diodes, used as varactors, a K-band
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CHV2411aQDG
CHV2411a-QDG
DSCHV2411aQDG7254
MIL-STD-1686C
24GHZ
AN0017
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24GHZ
Abstract: AN0017
Text: CHV2411aQDG RoHS COMPLIANT Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC In QFN package Description The CHV2411a-QDG is a monolithic multifunction for frequency generation. It integrates a X-band “push-push” oscillator with frequency control VCO thanks to basecollector diodes, used as varactors, a K-band
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CHV2411aQDG
CHV2411a-QDG
DSCHV2411aQDG7254
24GHZ
AN0017
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type General Purpose PIN Diode BAP50-04 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low diode capacitance. 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low diode forward resistance. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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BAP50-04
OT-23
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Untitled
Abstract: No abstract text available
Text: CHV2411aQDG Fully Integrated HBT K-band VCO GaAs Monolithic Microwave IC in QFN package Description The CHV2411aQDG is a monolithic multifunction for frequency generation. It integrates an X-band “push-push” oscillator with frequency control VCO thanks to base-collector diodes, used as
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CHV2411aQDG
CHV2411aQDG
V2411A
DSCHV2411aQDG3232
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SMD 02W
Abstract: BAR64-02W SCD80
Text: BAR64-02W Silicon PIN Diode High voltage current controlled 2 RF resistor for RF attenuator and switches Frequency range above 1 MHz up to 3 GHz Low resistance and long carrier lifetime Very low capacitance at zero volts reverse 1 bias at frequencies above 1 GHz
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BAR64-02W
VES05991
SCD80
Aug-28-2001
100MHz
900MHz
1800MHz
SMD 02W
BAR64-02W
SCD80
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BAR64-02V
Abstract: SC79
Text: BAR64-02V Silicon PIN Diode 2 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz up to 3 GHz 1 Low resistance and long carrier lifetime VES05991 Very low capacitance at zero volts reverse bias at frequencies above 1 GHz
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BAR64-02V
VES05991
Aug-28-2001
900MHz
1800MHz
BAR64-02V
SC79
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SMD diode s26
Abstract: BAP64-02 BAP64 2s262 20 GHz SMD PIN diode s26 ir
Text: Silicon PIN diode BAP64 – 02 FEATURES • High voltage, current controlled · RF resistor for RF attenuators and switches · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 3 GHz. APPLICATIONS
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BAP64
OD523
SC-79
SMD diode s26
BAP64-02
BAP64
2s262
20 GHz SMD PIN diode
s26 ir
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PIN diode ADS model
Abstract: rx tx switch 433 APN1002 BAP51-02 ADS 10 diode BAP64-02 SC79 TL244 wireless switch circuit diagram with PCB Design
Text: Philips Semiconductors Application note AN10173-01 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high performance RF switch. The switch main function is to switch an RF port ANT between the transmitter
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AN10173-01
BAP64-02
APN1002
PIN diode ADS model
rx tx switch 433
BAP51-02
ADS 10 diode
SC79
TL244
wireless switch circuit diagram with PCB Design
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PIN diode ADS model
Abstract: APN1002 bluetooth advantages and disadvantages BAP51-02 diode ADS model BAP51 Series RX-2 -G rx tx switch 433 TXC18 microstripline FR4
Text: Philips Semiconductors Application note AN10173-01 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high performance RF switch. The switch main function is to switch an RF port ANT between the transmitter
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AN10173-01
BAP64-02
APN1002
PIN diode ADS model
bluetooth advantages and disadvantages
BAP51-02
diode ADS model
BAP51 Series
RX-2 -G
rx tx switch 433
TXC18
microstripline FR4
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diode N10 smd
Abstract: dfn10 footprint
Text: PL IA NT CO M *R oH S Features Applications • Low capacitance - 0.3 pF ■ USB 3.0 ■ ESD protection ■ HDMI 1.4 ■ Vcc + six I/O data lines ■ High speed port protection ■ RoHS compliant* ■ Portable electronics CDDFN10-0506N - TVS/Steering Diode Array
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CDDFN10-0506N
DFN-10
diode N10 smd
dfn10 footprint
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Surface Mount PIN Diodes HSMP-3830 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ultra-Low Distortion Switching +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Distortion Attenuating 0.4 3 ● Low Current Switching 2 +0.1 0.95-0.1 +0.1
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HSMP-3830
OT-23
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PIN diode ADS model
Abstract: BAP51-02 HIGH POWER ANTENNA SWITCH PIN DIODE APN1002 BAP64-02 SC79 bluetooth transmitter circuit diagram spdt switch ADS 10 diode tl144
Text: Application Philips Semiconductors Business Line RF Modules, MST Consumer Title: 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes Author: Johan Janssen Doc. Nr RNR-T20-APPL-01/1686 Date: 2001-09-25 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high
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RNR-T20-APPL-01/1686
BAP64-02
APN1002
PIN diode ADS model
BAP51-02
HIGH POWER ANTENNA SWITCH PIN DIODE
SC79
bluetooth transmitter circuit diagram
spdt switch
ADS 10 diode
tl144
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diode DB 03
Abstract: BAP63 BAP63-03 diode db 900 2S252
Text: Silicon PIN diode BAP63 – 03 FEATURES • High speed switching for RF signals · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 3 GHz. APPLICATIONS · RF attenuators and switches. DESCRIPTION
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BAP63
OD323
OD523
SC-79
diode DB 03
BAP63
BAP63-03
diode db 900
2S252
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Untitled
Abstract: No abstract text available
Text: PL IA NT CO M *R oH S Features Applications • Low capacitance - 0.3 pF ■ USB 3.0 ■ ESD protection ■ HDMI 1.4 ■ Vcc + six I/O data lines ■ High speed port protection ■ RoHS compliant* ■ Portable electronics CDDFN10-0506N - TVS/Steering Diode Array
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CDDFN10-0506N
DFN-10
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diode S4 05
Abstract: smd diode S4 diode smd JS 8 BAP51-02
Text: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
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BAP51
OD523
SC-79
diode S4 05
smd diode S4
diode smd JS 8
BAP51-02
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BAP63
Abstract: BAP63-03
Text: LESHAN RADIO COMPANY, LTD. Silicon PIN diode BAP63 – 03 FEATURES • High speed switching for RF signals · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 3 GHz. APPLICATIONS · RF attenuators and switches.
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BAP63
OD323
OD523
SC-79
BAP63
BAP63-03
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