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IXYS Corporation IXGN200N60B3 IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGN200N60B3		212			1 $51.06 10 $41.2 100 $41.2 1000 $41.2 10000 $41.2	Buy Now
TTI	IXGN200N60B3	Tube	60		10	1 - 10 $40.79 100 $40.79 1000 $40.79 10000 $40.79	Buy Now
IXYS Corporation IXGE200N60B IGBT Transistors 175 Amps 600V 2.1 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGE200N60B					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXXX200N60B3 IGBTs PLUS247 600V 200A IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXXX200N60B3					1 - 10 - 100 - 1000 $11.57 10000 $11.57	Get Quote
TTI	IXXX200N60B3	Tube			300	1 - 10 - 100 - 1000 $17.14 10000 $17.14	Buy Now
IXYS Corporation IXXK200N60B3 IGBTs GenX3 XPT 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXXK200N60B3					1 - 10 - 100 - 1000 $16.35 10000 $16.35	Get Quote
TTI	IXXK200N60B3	Tube			300	1 - 10 - 100 - 1000 $18.37 10000 $18.37	Buy Now
IXYS Corporation IXXN200N60B3 IGBTs XPT 600V IGBT GenX3 XPT IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXXN200N60B3					1 - 10 - 100 - 1000 $18.07 10000 $18.07	Get Quote
TTI	IXXN200N60B3	Tube			300	1 - 10 - 100 - 1000 $25.77 10000 $25.77	Buy Now

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200N60B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
200n60 Abstract: robot control Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	200N60B 160ns 227TM 728B1 200n60 robot control	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	200N60B 160ns 227TM IXGN200N60B 405B2	PDF
200n60 Abstract: No abstract text available Text: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	200N60B 227TM 25crease 728B1 200n60	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	200N60B OT-227B,	PDF
200n60 Abstract: IXGN200N60B robot control RG200 Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V Preliminary Data E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C	Original	200N60B OT-227B, 728B1 200n60 IXGN200N60B robot control RG200	PDF
200N60B Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16 Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	200N60B 160ns 227TM IXGN200N60B 405B2 200N60B 200n60 SOT227B package SOT227B 123B16	PDF
200N60B Abstract: 200n60 Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C 200 A IL Terminal Current Limit	Original	200N60B OT-227B, 200N60B 200n60	PDF
200n60 Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30	Original	200N60B OT-227B, 200n60	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C 200 A IL Terminal Current Limit	Original	200N60B OT-227B,	PDF
200n60 Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30	Original	200N60B OT-227B, 200n60	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60	PDF

120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B	PDF