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    Kyocera AVX Components 200B104KW50XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 200B104KW50XT)
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    Avnet Americas 200B104KW50XT Tape w/Leader 24 Weeks 500
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    Mouser Electronics 200B104KW50XT
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    TTI 200B104KW50XT Reel 500
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    Richardson RFPD 200B104KW50XT 500
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    Kyocera AVX Components 200B104KW50XT1K

    Silicon RF Capacitors / Thin Film 50V 0.1uF Tol 10% Las Mkg
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    Mouser Electronics 200B104KW50XT1K
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    200B104KW50XT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    100A101JW150XT

    Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 100A101JW150XT transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1

    100A100JW150XT

    Abstract: transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 100A100JW150XT transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108