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    200V TRANSISTOR NPN 2A Search Results

    200V TRANSISTOR NPN 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    200V TRANSISTOR NPN 2A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    200V transistor npn 2a

    Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
    Text: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A PDF

    nte2650

    Abstract: nte2649
    Text: NTE2649 Silicon NPN Transistor Darlington Compl to NTE2650 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2649 NTE2650) nte2650 nte2649 PDF

    NTE375

    Abstract: NTE398
    Text: NTE375 Silicon NPN Transistor TV Vertical Output Compl to NTE398 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE375 NTE398) 500mA 100mA NTE375 NTE398 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A


    Original     		ENA1836B PCP1208 450mm2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A


    Original     		ENA1836B PCP1208 450mm2 PDF

    transistor A1837

    Abstract: A1837
    Text: Ordering number : ENA1837A AML2002 Bipolar Transistor 200V, 0.7A, Low VCE sat , NPN Single TO-126ML http://onsemi.com Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


    Original     		ENA1837A AML2002 O-126ML A1837-7/7 transistor A1837 A1837 PDF

    KSB546

    Abstract: KSD401 vertical tv deflexion KSD401 O
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546


    Original     		KSD401 KSB546 KSB546 KSD401 vertical tv deflexion KSD401 O PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


    Original     		KSD401 KSB546 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


    OCR Scan     		KSD401 KSB546 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2307 PDF

    npn 200V 0.2A SOT89

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN process design, excellent power dissipation offers


    Original     		OT-89 OD-123+ 060TYP 118TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH npn 200V 0.2A SOT89 PDF

    NTE2307

    Abstract: No abstract text available
    Text: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2307 NTE2307 PDF

    2SC1766

    Abstract: transistor marking HB sot-89 MARKING HB SOT-89 P1766
    Text: WILLAS FM120-M+ 2SC1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN • Batch process design, excellent power dissipation offers


    Original     		OT-89 OD-123+ FM120-M+ 2SC1766 FM1200-M 060TYP 118TYP FM120-MH FM130-MH FM140-MH transistor marking HB sot-89 MARKING HB SOT-89 P1766 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		KSD401 KSB546 O-220 KSD401 PDF

    Untitled

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 Us A TELEPHONE: 973 376-2922 (212)227-6005 BUY72 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min.) • Low Collector Saturation Voltage:V CE(M i)=1.5V@lc=7A


    Original     		BUY72 PDF

    KSB546

    Abstract: KSD401
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		KSD401 KSB546 O-220 KSB546 KSD401 PDF

    a1837

    Abstract: transistor A1837
    Text: AML2002 Ordering number : ENA1837A SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


    Original     		AML2002 ENA1837A A1837-7/7 a1837 transistor A1837 PDF

    transistor n53

    Abstract: ZX5T653F h 033 Marking N53
    Text: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


    Original     		ZX5T653F ZX5T653FTA transistor n53 ZX5T653F h 033 Marking N53 PDF

    transistor a1837

    Abstract: a1837 A1837-2 a1837 transistor a1837 datasheet a18371 ENA1837 vceo200v ic10a AML2002 TC-00002562
    Text: AML2002 Ordering number : ENA1837 SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


    Original     		AML2002 ENA1837 A1837-4/4 transistor a1837 a1837 A1837-2 a1837 transistor a1837 datasheet a18371 ENA1837 vceo200v ic10a AML2002 TC-00002562 PDF

    Untitled

    Abstract: No abstract text available
    Text: PCP1208 Ordering number : ENA1836 SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A


    Original     		ENA1836 PCP1208 450mm2 A1836-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: AML2002 Ordering number : ENA1837A SANYO Semiconductors DATA SHEET AML2002 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.125V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3A


    Original     		ENA1837A AML2002 A1837-7/7 PDF

    PCP1208

    Abstract: a1836
    Text: PCP1208 Ordering number : ENA1836A SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A


    Original     		ENA1836A PCP1208 450mm2 A1836-7/7 PCP1208 a1836 PDF

    Untitled

    Abstract: No abstract text available
    Text: PCP1208 Ordering number : ENA1836A SANYO Semiconductors DATA SHEET PCP1208 NPN Epitaxial Planar Silicon Transistor LED Back Light Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE sat =0.115V(typ.)@IC=0.35A


    Original     		PCP1208 ENA1836A 450mm2Ã A1836-7/7 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF