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    KSD401 Search Results

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    KSD401 Price and Stock

    onsemi KSD401G

    TRANS NPN 150V 2A TO220-3
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    onsemi KSD401Y

    TRANS NPN 150V 2A TO220-3
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    onsemi KSD401YTU

    TRANS NPN 150V 2A TO220-3
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    DigiKey KSD401YTU Tube 1,000
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    onsemi KSD401FYTU

    TRANS NPN 150V 2A TO220-3
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    Fairchild Semiconductor Corporation KSD401G

    Power Bipolar Transistor, 2A, 150V, NPN, TO-220AB, 3 Pin '
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    Rochester Electronics KSD401G 390 1
    • 1 $0.36
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    KSD401 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSD401 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    KSD401 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    KSD401 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSD401 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSD401FYTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401G Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401G Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401O Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401O Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401R Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401Y Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401Y Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401YTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD401YTU_NL Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF

    KSD401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSB546

    Abstract: KSD401 vertical tv deflexion KSD401 O
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546


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    PDF KSD401 KSB546 KSB546 KSD401 vertical tv deflexion KSD401 O

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    PDF KSD401 KSB546 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSD401 KSB546 O-220 KSD401

    KSB546

    Abstract: KSD401
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSD401 KSB546 O-220 KSB546 KSD401

    Untitled

    Abstract: No abstract text available
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


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    PDF KSB546 -200V KSD401 O-220 KSB546YTU KSB546O KSB546R KSB546Y

    Untitled

    Abstract: No abstract text available
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


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    PDF KSB546 -200V KSD401 O-220

    KSB546

    Abstract: KSD401
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSD401 KSB546 O-220 KSB546 KSD401

    Untitled

    Abstract: No abstract text available
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


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    PDF KSB546 -200V KSD401 O-220

    KSB546

    Abstract: KSD401
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


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    PDF KSB546 -200V KSD401 O-220 KSB546 KSD401

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


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    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r C urrent: lc=2A C ollecto r D issipation: P c= 2 5 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating


    OCR Scan
    PDF KSD401 KSB546

    KSB546

    Abstract: KSD401
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r Current: lc=2A C ollecto r D issipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit


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    PDF KSD401 KSB546 O-220 500uA, KSB546 KSD401

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    PDF KSD401 KSB546 O-220

    transistor t0-220

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT T0-220 • Complement to KAB546 • Collector-Base Voltage V Cb o = 2 0 0 V • Collector Current lc=2A • Collector Dissipation P0=25W Tc=25‘C A B S O LU TE MAXIMUM RATINGS Characteristic


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    PDF KSD401 KAB546 T0-220 500mA, transistor t0-220

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-B ase Voltage: V Cbo = -200V C ollecto r C urrent: lc = -2A C ollecto r D issipation: Pc= 2 5W T c=25°C ABSOLUTE MAXIMUM RATINGS Characteristic


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    PDF KSB546 KSD401 -200V

    Untitled

    Abstract: No abstract text available
    Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSD401 Collector-Base Voltage: V C b o = -200V Collector Current: lc = -2A Collector Dissipation: Pc= 25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage


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    PDF KSB546 KSD401 -200V

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Voltage: V Cbo = 2 0 0 V Collector Current: lc=2A Collector Dissipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    PDF KSD401 KSB546

    TS 4142

    Abstract: 18Oi S03 pnp KSD401 KSD526 samsung tv
    Text: SAMSUNG SEMICONDUCTOR 14E INC KSB546 D I T 'ib M m a 0 0 0 7 SOG PNP EPITAXIAL SILICON TRANSISTOR - T 33- TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-Base Voltage Vcso = -2 0 0 V C ollecto r C urrent lc = - 2 A C ollecto r D issipation PC=25W Tc =25°C


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    PDF ksb546 KSD401 -200V O-220 ksb601 r-33-Ã TS 4142 18Oi S03 pnp KSD401 KSD526 samsung tv

    ksb546

    Abstract: No abstract text available
    Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • Complement to KSD401 • Collector-Base Voltage V 0 e o = -200V • Collector Current l c = -2A • Collector Dissipation Pc= 25W Tc=25'C ABSOLUTE MAXIMUM RATINGS Rating Unit VcEO


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    PDF KSB546 KSD401 -200V 500mA, ksb546