transistor directory
Abstract: NONLINEAR MODEL LDMOS microwave office Gan transistor LDMOS
Text: NXP RFpower Model Library Manual for Microwave Office Version 20120420 Contents • • • • • • Model library release notes How to install the NXP RFpower Model Library and add it to your design project How to install stand-alone NXP LDMOS Models and add them to your design project
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transistor directory
NONLINEAR MODEL LDMOS
microwave office
Gan transistor
LDMOS
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MIPF2520D4R7
Abstract: No abstract text available
Text: CD-TCE064-201204 Multi-layer Power Inductor：MIPF2520series （Small Size Type） Features MIPseries • 2.5x2.0 mm and 1 mm in height very compact size : CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class
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CD-TCE064-201204
InductorMIPF2520series
MIPF2520series
MIPF2520D4R7
MIPF2520D3R3
MIPF2520D2R2
MIPF2520D1R5
MIPF2520D1R5
MIPF2520D4R7
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MIPSTZ
Abstract: No abstract text available
Text: CD-TCE073-201204 Multi-layer Power Inductor : MIPSTZ2520D series Low Profile Type Features • 2.5x2.0 mm and 0.8 mm in height (small and low profile): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class
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MIPSTZ2520D
TZ2520D4R7
TZ2520D2R2
TZ2520D1R5
TZ2520D1R0
TZ2520D0R5
MIPSTZ
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SSM6J414TU
Abstract: No abstract text available
Text: SSM6J414TU MOSFETs Silicon P-Channel MOS U-MOS SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V)
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SSM6J414TU
SSM6J414TU
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Untitled
Abstract: No abstract text available
Text: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)
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TK80F06K3L
O-220SM
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Luxeon M
Abstract: 4 step MacAdam ellipse definition LXR7-SW40 4 step MacAdam PHILIPS marking Code 5C LXR7-SW57 MacAdam 5700K LXR7
Text: LUXEON M Array optimized for both high efficacy and high flux density enabling tight beam control Technical Datasheet DS103 LUXEON M High Flux Density and Efficacy Introduction LUXEON M emitters are illumination grade LEDs designed to enable outdoor and industrial applications
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DS103
Luxeon M
4 step MacAdam ellipse definition
LXR7-SW40
4 step MacAdam
PHILIPS marking Code 5C
LXR7-SW57
MacAdam
5700K
LXR7
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AN10876
Abstract: varistor 275 AN-1104 SSL2109AT AN1104 SSL2109 SSL2109A BYV25
Text: SSL2109 series GreenChip controller for LED lighting Rev. 3 — 4 June 2012 Product data sheet 1. General description The SSL2109 series is a range of high-voltage Integrated Circuits IC for driving LED lamps in general lighting applications. The main benefits of this IC include:
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SSL2108
AN10876
varistor 275
AN-1104
SSL2109AT
AN1104
SSL2109A
BYV25
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Abstract: No abstract text available
Text: 74LVC1G14 Single Schmitt-trigger inverter Rev. 12 — 6 August 2012 Product data sheet 1. General description The 74LVC1G14 provides the inverting buffer function with Schmitt-trigger input. It is capable of transforming slowly changing input signals into sharply defined, jitter-free
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74LVC1G14
74LVC1G14
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P8563
Abstract: NXP 8563T 8563t PCF8563T PCF8563P 8563S
Text: PCF8563 Real-time clock/calendar Rev. 10 — 3 April 2012 Product data sheet 1. General description The PCF8563 is a CMOS1 Real-Time Clock RTC and calendar optimized for low power consumption. A programmable clock output, interrupt output, and voltage-low detector are
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PCF8563
PCF8563
P8563
NXP 8563T
8563t
PCF8563T
PCF8563P
8563S
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. typ. Impedance @ 25 MHz 25 MHz Z 425 Ω Impedance @ 100 MHz 100 MHz Z 580 Ω typ. Rated Current ΔT = 40K IR 5.0 A max. C Schematic: E General information:
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Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 136 Ω ±25% Impedance @ 100 MHz 100 MHz Z 170 Ω ±25% C Schematic: E General information: Curie Temperature: +140°C Storage Temperature on Tape & Reel : -20°C to +40°C
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 15 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 200 Ω ±25% Z 13000 Ω typ. IR 5.0 A max. RDC 0.025 Ω
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Abstract: No abstract text available
Text: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 702 Ω ±25% Impedance @ 100 MHz 100 MHz Z 773 Ω ±25% Rated Current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C
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Abstract: No abstract text available
Text: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 598 Ω ±25% Impedance @ 100 MHz 100 MHz Z 800 Ω ±25% Rated Current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 30 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 300 Ω ±25% Z 7000 Ω typ. IR 7.0 A max. RDC 0.015 Ω
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Abstract: No abstract text available
Text: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 10 MHz 10 MHz Z 65 Ω ±25% Impedance @ 100 MHz 100 MHz Z 130 Ω ±25% Rated Current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C
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Abstract: No abstract text available
Text: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 145 Ω ±25% Impedance @ 100 MHz 100 MHz Z 230 Ω ±25% Rated Current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 20 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 200 Ω ±25% Z 8000 Ω typ. IR 5.5 A max. RDC 0.025 Ω
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Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Abstract: No abstract text available
Text: AP4432GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Fast Switching Characteristic D D G S S 30V RDS ON 15mΩ ID ▼ RoHS Compliant SO-8 BVDSS 10A S Description D The Advanced Power MOSFETs from APEC provide the
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AP4432GM
100ms
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MB9B300B
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-6v0-E
MB85RC64V
MB85RC64V
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Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00049-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B320M Series MB9BF324K/L/M, MB9BF322K/L/M, MB9BF321K/L/M DESCRIPTION The MB9B320M Series are highly integrated 32-bit microcontrollers dedicated for embedded controllers
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DS706-00049-1v0-E
32-bit
MB9B320M
MB9BF324K/L/M,
MB9BF322K/L/M,
MB9BF321K/L/M
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