20M diode zener
Abstract: 102k1k DTDG14GP T100
Text: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)
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DTDG14GP
500mA/5mA)
SC-62
100m200m500m
20M diode zener
102k1k
DTDG14GP
T100
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marking DIODE 2U 04
Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Text: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.
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DTDG23YP
500/50mA)
marking DIODE 2U 04
DTDG23YP
T100
marking 2U diode
II1001
Diode marking CODE 5M
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DTDG14GP
Abstract: T100 sc-62 zener
Text: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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DTDG14GP
500mA
SC-62
DTDG14GP
T100
sc-62 zener
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Untitled
Abstract: No abstract text available
Text: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)
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DTDG14GP
500mA/5mA)
SC-62
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5v 1a ZENER DIODE
Abstract: about zener diode JAPAN transistor Zener Diode frequency DTDG23YP T100 100M200M
Text: DTDG23YP Transistors 1A / 60V Digital transistor with built-in resistors and zener diode DTDG23YP zExternal dimensions (Unit : mm) MPT3 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High DC current gain. (Min. 300 at VO / IO=2V / 0.5A) 2) Low Vo(on). (Typ. 0.4V at IO / II=500mA / 5mA)
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DTDG23YP
500mA
5v 1a ZENER DIODE
about zener diode
JAPAN transistor
Zener Diode frequency
DTDG23YP
T100
100M200M
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DR marking
Abstract: 2SD1866 2SD2143 2SD2212 T100
Text: 2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Unit : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base.
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2SD2212
2SD2143
2SD1866
2SD2212
SC-62
DR marking
2SD1866
T100
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1N5230
Abstract: AMS diode package you lost me
Text: 1N5230 ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURF. Page 1 of 1 Enter Your Part # Home Part Number: 1N5230 Online Store 1N5230 Diodes ZENER VOLTAGE R EGULATOR DIODE IN HERMETIC Transistors Integrated Circuits CERAMIC SUR FACE MOUNT Optoelectronics
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1N5230
1N5230
DO-204AA
com/1n5230
AMS diode package
you lost me
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1N748
Abstract: 1N748H
Text: 1N748 500mW silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% stan. Page 1 of 1 Enter Your Part # Home Part Number: 1N748 Online Store 1N748 Diodes 500mW silicon zener diode. Zener voltage 3.9 V. Test Transistors current 20 mA. +-10% standard tolerance.
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1N748
500mW
1N748
pp/10k:
com/1n748
1N748H
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Untitled
Abstract: No abstract text available
Text: 1N5230A Zener Voltage Regulator Diode 0.03 Diodes Reference/Regulator Diodes Gene. Page 1 of 1 Enter Your Part # Home Part Number: 1N5230A Online Store 1N5230A Diodes Zener Voltage Regulator Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N5230A
1N5230A
DO-204AA
com/1n5230a
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1N753 zener
Abstract: 1n753 List of Zener diode
Text: 1N753 500mW - Silicon Zener Diode. Zener Voltage 6.2 V. Test Current 20 MA. +-10% . Page 1 of 1 Enter Your Part # Home Part Number: 1N753 Online Store 1N753 Diodes 500mW - Silicon Zener Diode. Zener Voltage 6.2 V. Test Current 20 Transistors MA. + -10% Standard Tolerance.
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1N753
500mW
1N753
pp/10k:
DO-35
com/1n753
1N753 zener
List of Zener diode
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20M diode zener
Abstract: BZM55C30
Text: BZM55C30 SURFACE MOUNT ZENER DIODE Molded Glass Unit: inch (mm) ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Power Dissipation up to Tamb = 25 C Ptot 500* mW Storage Temperature Tstg -65 to +175 o C Tj 175 o C RthA 0.3* K/mW VF 1 V o Junction Temperature
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BZM55C30
100mA
20M diode zener
BZM55C30
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1N755
Abstract: No abstract text available
Text: 1N755 500mW - Silicon Zener Diode. Zener Voltage 7.5 V. Test Current 20 MA. +-10% . Page 1 of 1 Enter Your Part # Home Part Number: 1N755 Online Store 1N755 Diodes 500mW - Silicon Zener Diode. Zener Voltage 7.5 V. Test Current 20 Transistors MA. + -10% Standard Tolerance.
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1N755
500mW
1N755
pp/10k:
DO-35
com/1n755
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1N748A
Abstract: 14308 1N748A DIODE zener diode voltage list
Text: 1N748A 500mW - Silicon Zener Diode. Zener Voltage 3.9 V. Test Current 20 MA. +-5%. Page 1 of 1 Enter Your Part # Home Part Number: 1N748A Online Store 1N748A Diodes 500mW - Silicon Zener Diode. Zener Voltage 3.9 V. Test Transistors Current 20 MA. + -5% Tolerance.
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1N748A
500mW
1N748A
com/1n748a
14308
1N748A DIODE
zener diode voltage list
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2143 / 2SD1866 z Dimensions (Unit : mm) 1.5 5.5 (2) 5.1 2.3 (1) 0.9 0.75 2SD2143 6.5 zFeatures 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"
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2SD2143
2SD1866
2SD2143
SC-63
R0039A
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20M diode zener
Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPT1G
500mA
SC-89
463C-01
463C-02.
20M diode zener
102k1k
LDTDG12GPT1G
SC-89
transistor collector diode protection
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LDTBG12GPLT1G
Abstract: 102k1k marking 20M resistor 20M diode zener
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPLT1G
500mA
OT-23
LDTBG12GPLT1G
102k1k
marking 20M resistor
20M diode zener
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102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPLT1G
500mA
OT-23
102k1k
20M diode zener
LDTDG12GPLT1G
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Diode marking CODE 5M
Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTDG12GPWT1G
500mA
Diode marking CODE 5M
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
LDTDG12GPWT1G
LDTDG12GPWT3G
diode 50M marking code
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Diode marking CODE 5M
Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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LDTBG12GPWT1G
500mA
Diode marking CODE 5M
diode 50M marking code
LDTBG12GPWT1G
transistor collector diode protection
RADIO FREQUENCY transistor marking CODE
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Zener diode marking
Abstract: DIODE-marking diode zener BZX55 C15 DO-34 BZX55 c3v9 BZX55-C2V2 BZX55-C2V4 BZX55-C2V7 BZX55-C3V0
Text: ZENER DIODES BZX55C-SERIES Device Type BZX55-C2V2 BZX55-C2V4 BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 BZX55-C10 BZX55-C11 BZX55-C12 BZX55-C13 BZX55-C15
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BZX55C-SERIES
BZX55-C2V2
BZX55-C2V4
BZX55-C2V7
BZX55-C3V0
BZX55-C3V3
BZX55-C3V6
BZX55-C3V9
BZX55-C4V3
BZX55-C4V7
Zener diode marking
DIODE-marking
diode zener BZX55
C15 DO-34
BZX55
c3v9
BZX55-C2V2
BZX55-C2V4
BZX55-C2V7
BZX55-C3V0
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marking D5 TOSHIBA
Abstract: IR zener 20M diode zener
Text: TO SHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U Q2 Z 3 QQ U nit in nun MAXIMUM RATINGS Ta = 25°C SYMBOL p* CHARACTERISTIC Power Dissipation Junction Tem perature Storage Tem perature Range Tj Tstg
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U02Z300
U02Z300
U02Z300-X
U02Z300-Y
U02Z300-Z
marking D5 TOSHIBA
IR zener
20M diode zener
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IN5555
Abstract: in5556 transient absorption zener IN5557 IN5558 zener diode Izsm IIN5555 ZENER DIODE 437 IN555
Text: POWERZORB IN5555 -IIN5558 1.5 KW Transient Absorption Zener Diode A range of Transient Absorption zener diodes specifically designed to meet high reliability requirements in the aviation industry. 1.5KW; 1mS expo surge _ _ 1 W max cont 3 0 .3 -175V
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OCR Scan
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IN5555
-IIN5558
10-12S
127mm
-IN5558
in5556
transient absorption zener
IN5557
IN5558
zener diode Izsm
IIN5555
ZENER DIODE 437
IN555
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20M diode zener
Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Text: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200
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OCR Scan
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PDF
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U02Z300
t-10ms
20M diode zener
MARKING LY toshiba
U02Z300
U02Z300-X
U02Z300-Y
U02Z300-Z
TOSHIBA DIODE GLASS
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ST02D-170F2
Abstract: AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180
Text: m n m ^ /u x Power-Clamper Surface M ount D evice m s Z e n e r Diode with F as t Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit £ V\ 'T ¿5 V
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OCR Scan
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ST02D-170F2
wavefi50HzTiS
ST02D-170F2
AHA 500
ST02D-1
Zener Diode marking 3a
DIODE CQ
U180
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