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    20N100 Search Results

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    20N100 Price and Stock

    Littelfuse Inc IXFH20N100P

    MOSFET N-CH 1000V 20A TO247AD
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    DigiKey IXFH20N100P Tube 285 1
    • 1 $8.95
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    • 100 $7.53767
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    Newark IXFH20N100P Bulk 300
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    • 1000 $7.9
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    RS IXFH20N100P Bulk 8 Weeks 30
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    • 100 $11.66
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    Vishay Siliconix SQP120N10-09_GE3

    MOSFET N-CH 100V 120A TO220AB
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    DigiKey SQP120N10-09_GE3 Tube 229 1
    • 1 $3.92
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    Mini-Circuits BW-20N100W-

    FXD ATTEN /N/20DB 100W ROHS
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    DigiKey BW-20N100W- Box 9 1
    • 1 $750
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    IXYS Corporation IXGP20N100

    IGBT 1000V 40A 150W TO220
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    DigiKey IXGP20N100 Tube
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    IXYS Corporation IXFR20N100P

    MOSFET N-CH 1000V 11A ISOPLUS247
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    DigiKey IXFR20N100P Tube 30
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    • 100 $6.941
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    Find more 20N100 price and stock on Findchips.com

    20N100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    20N100D2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N100E2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N100 O-247 O-268

    20N100

    Abstract: No abstract text available
    Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 20N100 O-220AB O-263 O-220haracteristic

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 20N100 O-220AB O-263

    Untitled

    Abstract: No abstract text available
    Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N100 20N100 O-268 O-247 O-268AA

    11n1000

    Abstract: CRP-10N-250 11N100
    Text: CRP-N Series BI-DIRECTIONAL COUPLERS 5 to 1500 MHz / Wideband / Low Profile 0.2" Device / Meri-Pac / PC Mount for Auto-Insertion PRINCIPAL SPECIFICATIONS Frequency Range, MHz Model Number CRP-10N-250 CRP- 20N-250 5 - 500 5 - 500 CRP-11N-1000 100 - 1500 CRP- 20N-1000


    Original     		PDF CRP-10N-250 20N-250 CRP-11N-1000 20N-1000 MIL-C-15370 25Mar96 11n1000 CRP-10N-250 11N100

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous


    Original     		PDF 20N120 247TM

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    20N120

    Abstract: 20N100
    Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous


    Original     		PDF 20N120 247TM 20N120 20N100

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IGBT IXGA 20N100 IXGP 20N100 V CES = ^C25 V CE sat = 1000 V 40 A 3.0 V Maximum Ratings Symbol Test Conditions V CES VCGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGE = 1 M£2 1000 V V GES Continuous ±20 V


    OCR Scan     		PDF 20N100 O-22QAB

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IX G H 2 0 N 1 0 0 IX G T 2 0 N 1 0 0 V CES ^C25 v CE sat ¡>c Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 1000 V V CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v GES Continuous ±20 V VGEM Transient


    OCR Scan     		PDF O-268 O-247 O-268

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    20n80

    Abstract: 20N90 20N80A 20N100
    Text: 4686226 I X Y S CORP ¡J3 ß T | MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r


    OCR Scan     		PDF IXGH20N80, IXGM20N80, IXGH20N80 IXGM20N80 IXGH20N90 IXGH20N100 IXGM20N90 IXGM20N100 20n80 20N90 20N80A 20N100

    11n1000

    Abstract: 11N100
    Text: CRP-N Series_ BI-DIRECTIONAL COUPLERS 5 to 1500 MHz / Wideband / Low Profile 0.2" Device / Meri-Pac / PC Mount for Auto-Insertion fo rw ard INPUT COUPLED PORT REVERSE COUPLED PORT O O CQJUR5 -O O MA IN OUTPUT L I NE PRINCIPAL SPECIFICATIONS Frequency


    OCR Scan     		PDF CRP-10N-250 20N-250 CRP-11N-1000 20N-1000 201-575-1300/FAX201-575-0531 11n1000 11N100