Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
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mosfet 20n60
Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
O-247
QW-R502-587
mosfet 20n60
600V 20A N-Channel MOSFET TO-3P
20n60 G
mosfet 20n60 600v
20N60 mosfet
20N60G-T3P-T
N-Channel 600V MOSFET
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mosfet 20n60
Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
20N60L-T47-T
20N6ntarily,
QW-R502-587
mosfet 20n60
IDA14
600V 20A N-Channel MOSFET TO-3P
20N60 mosfet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
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mosfet 20n60
Abstract: 20n60
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
mosfet 20n60
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20N60
Abstract: 20N60 mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
20N60 mosfet
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20N60
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient
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20N60
15N60
O-247
O-204
O-204
O-247
20N60
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20n60
Abstract: 20N60 datasheet p 20n60 15n60 20n60 to-247
Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V = 20 A ID25 RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient
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20N60
15N60
O-247
O-204
O-204
O-247
20n60
20N60 datasheet
p 20n60
15n60
20n60 to-247
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20n60
Abstract: 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A
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15N60
20N60
20n60
15N60
20N60 datasheet
20n60 G
20n60 to-247
20N6065
K 15N60
15n60 TO-247
IXFM20N60
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A
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15N60
20N60
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15N60
Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20
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15N60
20N60
15N60
20N60
sd 20n60
20n60 G
K 15N60
15n60 TO-247
20n60 to-247
20N60NS
SD 10 N60
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20N60
Abstract: 15N60 K 15N60 20n60 to-247
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A IDM TC = 25°C, pulse width limited by TJM
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15N60
20N60
20N60
O-247
O-204
100ms
K 15N60
20n60 to-247
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20N6065
Abstract: 20N60 15N60 50BVDSS p 20n60 D-68623 20n60 G IXTM15N60 K 15N60 tr/SD 10 N60
Text: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 600 V IXTH/IXTM 20 N60 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V V GS Continuous
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15N60
20N60
O-204
O-247
20N6065
20N60
15N60
50BVDSS
p 20n60
D-68623
20n60 G
IXTM15N60
K 15N60
tr/SD 10 N60
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20n60a40
Abstract: 20N60A 20N60 20N60A9 igbt 20n60
Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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O-247
O-204
O-204AE
20N60
20N60A
20N60U1
20N60AU1
20n60a40
20N60A9
igbt 20n60
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IXYS CS 2-12
Abstract: No abstract text available
Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD
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15N60
20N60
O-247
IXYS CS 2-12
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20n60 to-247
Abstract: 20N60 20N60D 91526E
Text: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous
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15N60
20N60
Cto150
20N60
O-247
20n60 to-247
20N60D
91526E
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IXTM80N60
Abstract: diode c248 20n60vd
Text: IXTH/IXTM 20N60 VDSS = 600 V lD25 = 20 A MegaMOS FET ^ D S o n " ß N-Channel Enhancement Mode Symbol Test Conditions VDSS ^ V„on Tj = 25° C to 1 50° C; RGS= Maximum Ratings =25°Cto 150°C 1 M£2 600 V 600 V v GS Continuous ±20 V v GSM Transient
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20N60
15N60
O-247
O-204
O-204
O-247
C2-50
IXTM80N60
diode c248
20n60vd
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Untitled
Abstract: No abstract text available
Text: h IXYS v HiPerFET Power MOSFETs " IXFH/IXFM15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15
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IXFH/IXFM15N60
15N60
20N60
20N60
O-247
O-204
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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20N60AU
Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V
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O-247
T0-204AE
20N60AU
20N60A
g20n60
N60A
20N60
30 N60A
bt 151 600
20n60 G
LT0B
igbt 20n60
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15n60
Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
Text: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C
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O-247
15N60
20N60
O-204
O-247
100ms
f sss 20n60
15N60A
IXTM15N60
IXTH15N60
5196
IXTH20n60 to-247
D-68623
IXTH20N60
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IRFP 640
Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140
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135XTP
01N100
1N100
2N100
2N100
100X2
01N100X3
O-251,
O-220AB
IRFP 640
IRFP 260 M
6N80A
0 280 130 023
IRFP
24n50
5N10
IXTM20N60
6N90A
01N100
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20NG0
Abstract: 15n60 DI-5 f sss 20n60
Text: VDSS MegaMOS FET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V R DS on ^D25 15 A 0.50 Q 20 A 0.35 Ü N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 600 Tj = 25°C to 150°C; Ros = 1 M il 600 V Vos Continuous
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15N60
20N60
O-247
O-204
O-204
O-247
C2-56
C2-57
20NG0
DI-5
f sss 20n60
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IRFP 260 M
Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH
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67N10
75N10
42N20
50N20
35N30
40N30
12N50A
21N50
24N50
30N50
IRFP 260 M
5n100
6n80
IRFP
IXTN 36N50 C
irfp 240
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