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    20N60AU1 Price and Stock

    IXYS Corporation IXGH20N60AU1

    IGBT 600V 40A 150W TO247AD
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    20N60AU1 Datasheets Context Search

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    20n60a40

    Abstract: 20N60A 20N60 20N60A9 igbt 20n60
    Text: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF O-247 O-204 O-204AE 20N60 20N60A 20N60U1 20N60AU1 20n60a40 20N60A9 igbt 20n60

    IXGH20N60AU1

    Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient


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    PDF N60U1 N60AU1 O-247 IXGH20N60U1 IXGH20N60AU1 IXGH20N60AU1 IXGH20N60U1 20N60AU1 *GH20N60AU1

    20N60A

    Abstract: D-68623 20N60U1 20N60AU
    Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    PDF N60U1 N60AU1 D-68623 20N60U1 20N60AU1 20N60A 20N60U1 20N60AU

    20N60A

    Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90


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    PDF 20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60

    20N60AU1

    Abstract: ixgh 1500 IXGH20N60U1 ixgh20N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 20 N60U1 IXGH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF N60U1 N60AU1 20N60U1 20N60AU1 20N60AU1 ixgh 1500 IXGH20N60U1 ixgh20N60AU1

    20N60U1

    Abstract: 20N60AU1 N60AU1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR


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    PDF N60U1 N60AU1 20N60U1 20N60AU1 20N60U1 20N60AU1 N60AU1

    20N60A

    Abstract: 20n60 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90


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    PDF 20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 ixgh 1500 20N60 datasheet 20n60 G N60A 20N60AU MJ 900# f 20n60a

    IGBT 20N60

    Abstract: 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000
    Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF O-247 20N60 20N60A O-204AE IGBT 20N60 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


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    PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    20N60AU

    Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
    Text: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V


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    PDF O-247 T0-204AE 20N60AU 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60

    Untitled

    Abstract: No abstract text available
    Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


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    PDF 20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â

    Untitled

    Abstract: No abstract text available
    Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings


    OCR Scan
    PDF N60U1 N60AU1 O-247 4hflb22b 20N60U1 20N60AU1

    IXGH20N60U1

    Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
    Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package


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    PDF 1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB

    IXGH20N60AU1

    Abstract: N60A *GH20N60AU1 20N60AU 20N60
    Text: 600 V 600 V 40 A 40 A CO iO, LU ^C25 O IXGH 20 N60U1 IXGH 20 N60AU1 > Low VrP, n IGBT with Diode CE sat High speed IGBT with Diode v CES 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ


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    PDF IXGH20 N60U1 IXGH20N60AU1 O-247 4bflb22b 20N60U1 20N60AU1 N60A *GH20N60AU1 20N60AU 20N60

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


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    PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


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    PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

    12n60u

    Abstract: sta 750 tic 263a
    Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH


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