Untitled
Abstract: No abstract text available
Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM
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IRFP450
O-247
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Untitled
Abstract: No abstract text available
Text: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90
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P12N100AU1
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1xys
Abstract: No abstract text available
Text: Dimensions in inch and [mm] 1" = 25.4 mm 0MH1.02j 0.030(0.76] F □ ii 11 0.&30[P.76} 0.230(5-34] 0-500[12.70] 1XYS reserves the right to change limits, test conditions and dimensions. 1998 IXYS All rights reserved J - 7 Dimensions in inch and [mm] (1" = 25.4 mm)
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0L049jt
049fl
QJ56f910l
1xys
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Untitled
Abstract: No abstract text available
Text: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM
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22N55
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1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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IXTN36N45
IXTN36N50
IXTN36N45
Cto150Â
IXTN36N
D-68619;
1xys
IXTN36N50
36N50
E72873
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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1xys
Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80
Text: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (*typ) (*typ) (*typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min * /CH Vgs % '14 & F Ds(on) Vd s = or €
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IXTH12N50
O-247
IXTH12N50A
IXTH15N70
UTH15N70A
O-204
IKTM3N80A
IXTM3N90
1xys
IXTH50N10
IXTH20n60 to-247
IXTH25N50
HP 3800
IXTH25N45
IXTH25N50A
IXTH15N80
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IXDP630 application note
Abstract: IXDP630
Text: □IXYS Data Sheet No. 91560B October 1991 INVERTER INTERFACE & DIGITAL DEADTIME GENERATOR for 3-PHASE PWM Controls IXDP630 / IXDP631 Features 5 Volt H C M O S Logic Im plem entation M aintains Low P o w er a t High S p ee d R e p la c e s Devices 1 0 - 1 2 S ta n d a r d S S I/M S I Logic
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91560B
IXDP630
IXDP631
IXDP630 application note
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1xys
Abstract: ixfn48n50 smd diode 239
Text: V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions v DSS ^ = 25°C to 150°C 500 500 ^ = 25°C to 150°C; RGS= 1 MQ 500 500 V ±20 ±20 V VGS T ransient U Tc u T0 1« dv/dt Maximum Ratings IXFK IXFN
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44N50
IXFK48N50
IXFN48N50
48N50
OT-227
1xys
ixfn48n50
smd diode 239
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1xys
Abstract: 90a944
Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200
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60N60
OT-227
1xys
90a944
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B1180
Abstract: 1XYS DRIVE STEPPER MOTOR WITH CONTROLER D-6840
Text: T 'V " V C J[ 1 5 PRELIM INARY TE CHN IC AL INFORMATION* Data Sheet No. 915100C O ctober 1991 □ High Performance Dual PWM Microstepping Controler IXMS150 FEATURES Two com plete, synchronous PWMs. Wide frequency range: 20kHz to 400kHz. Com m and inp ut range: ±2.0 V fu ll scafe.
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915100C
IXMS150
20kHz
400kHz.
B1180
B1180
1XYS
DRIVE STEPPER MOTOR WITH CONTROLER
D-6840
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IXFN21N100
Abstract: No abstract text available
Text: HiPerFET Power MOSFET IXFN21N100 v DSS cont P DS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGS = 1 Mi2 1000 V Ves vGSM Continuous
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IXFN21N100
OT-227
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IXSE502PC
Abstract: Hearing Aid ARM processor based Circuit Diagram IXSE502 DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840
Text: 4bE D • MböbEEb □□Gill? E BIIXY I X Y S CORP T ‘5 * ^ 3 ' O S □IXYS PRELIMINARY INFORMATION D atasheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features Direct 2 channel Quadrature Inputs with Schmitt Trigger Circuitry
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15502A
IXSE502
IXSE503
IXSE502PC
IXSE502PI
IXSE503PC
IXSE503PI
24ct/1
POB1180
Hearing Aid ARM processor based Circuit Diagram
DOWN COUNTER using 8051
flow chart for automatic control of three phase motor using 8051 ic
circuit diagram of digital hearing aid
incremental shaft encoder
8086 microcomputer
quadrature shaft decoder
D-6840
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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1xys
Abstract: No abstract text available
Text: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR
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58N50
61N50
58N50
61N50
150eC,
1xys
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1xys
Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
Text: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing
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Mbflb25b
D00127S
11014A
VB006
VB015
VB035
---N02
VB015--
VB024--
VB010
1xys
D-6840
D6840
VB035-08N04
VB024-08N04
VB035-04N04
VB015-10N04
VB035
VB024-04N04
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B118Q
Abstract: full bridge igbt induction heating generator
Text: □ I X Y PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 S ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or G reater Low- to High-Side Isolation 20ns Switching Time with 10OOpF Load; 100ns Switching Time with 10,000pF Load.
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1503A
IXBD4410
IXBD4411
IXBD4412
IXBD4413
IXBD4410/4411)
10OOpF
100ns
000pF
B118Q
full bridge igbt induction heating generator
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1xys
Abstract: No abstract text available
Text: Low CE sat IGBT with Diode High speed IGBT with Diode Symbol IXGH17N100U1 IXGH17N100AU1 Maximum Ratings Test Conditions T, = 25“C to 1 5 0 °C 1000 V T j = 25°C to 150°C; RGE = 1 M il 1000 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc =25°C
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IXGH17N100U1
IXGH17N100AU1
O-247
1XGH17N100U1
11C6H
IXQH17N180AU1
1xys
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1xys
Abstract: E153432 80N60A 80n60
Text: High Current IGBT 600 V 160 A 3V IXSN 80N60A YCES IC25 VCE sat Short Circuit SO A Capability Preliminary Data Symbol Test Conditions v CES v CGR Tj = 25°C to 150°C 600 V 1, = 25°C to 150°C; RGE = 1 M n 600 A Maximum Ratings v GES v GEM Continuous ±20
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80N60A
OT-227B,
80N60AU1
1xys
E153432
80n60
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