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    20N60S5 Search Results

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    20N60S5 Price and Stock

    Infineon Technologies AG SPP20N60S5XKSA1

    HIGH POWER_LEGACY
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    DigiKey SPP20N60S5XKSA1 Tube 1,241 1
    • 1 $5.16
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    Bristol Electronics SPP20N60S5XKSA1 300
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    Rochester Electronics SPP20N60S5XKSA1 256 1
    • 1 $2.21
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    • 100 $2.08
    • 1000 $1.88
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    EBV Elektronik SPP20N60S5XKSA1 16 Weeks 500
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    onsemi NTHL120N60S5Z

    MOSFET N-CH 600V 22A TO3PN
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    DigiKey NTHL120N60S5Z Tube 449 1
    • 1 $4.91
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    Avnet Americas NTHL120N60S5Z Tube 0 Weeks, 2 Days 211
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    NTHL120N60S5Z Tube 22 Weeks 450
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    Mouser Electronics NTHL120N60S5Z 440
    • 1 $4.91
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    Newark NTHL120N60S5Z Bulk 450 1
    • 1 $6.59
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    Rochester Electronics NTHL120N60S5Z 6,215 1
    • 1 $3.3
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    Avnet Silica NTHL120N60S5Z 23 Weeks 30
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    EBV Elektronik NTHL120N60S5Z 24 Weeks 30
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    Flip Electronics NTHL120N60S5Z 5,085
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    New Advantage Corporation NTHL120N60S5Z 360 1
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    Infineon Technologies AG SPP20N60S5

    MOSFET N-CH 650V 20A TO220-3
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    DigiKey SPP20N60S5 Tube 500
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    Mouser Electronics SPP20N60S5 25
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    TME SPP20N60S5 60 1
    • 1 $7.36
    • 10 $5.87
    • 100 $5.29
    • 1000 $4.93
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    ComSIT USA SPP20N60S5 633
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    Infineon Technologies AG SPW20N60S5FKSA1

    MOSFET N-CH 600V 20A TO247-3
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    DigiKey SPW20N60S5FKSA1 Tube 240
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    Avnet Americas SPW20N60S5FKSA1 Tube 15 Weeks 240
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    EBV Elektronik SPW20N60S5FKSA1 16 Weeks 240
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    Infineon Technologies AG SPB20N60S5ATMA1

    MOSFET N-CH 600V 20A TO263-3
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    DigiKey SPB20N60S5ATMA1 Cut Tape 1
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    SPB20N60S5ATMA1 Digi-Reel 1
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    SPB20N60S5ATMA1 Reel 1,000
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    EBV Elektronik SPB20N60S5ATMA1 2,000 16 Weeks 1,000
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    New Advantage Corporation SPB20N60S5ATMA1 2,000 1
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    20N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Text: 20N60S5 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Text: 20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original
    PDF SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
    Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5

    20n60s5

    Abstract: smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751

    20N60S5

    Abstract: SPP20N60S5 Q67040-S4751 SPB20N60S5 20n60s
    Text: 20N60S5 20N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge G,1 S,3 • Improved periodic avalanche rating • Extreme dv/dt rated COOLMOS


    Original
    PDF SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 SPP20N60S5 P-TO220-3-1 P-TO263-3-2 20N60S5 Q67040-S4751 20N60S5 Q67040-S4751 SPB20N60S5 20n60s

    20n60s5

    Abstract: SPP20N60S5 4252 spp20n60 Q67040-S4751 SPB20N60S5
    Text: 20N60S5 20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Ultra low gate charge · Improved periodic avalanche rating · Extreme dv/dt rated · Optimized capacitances


    Original
    PDF SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 P-TO220-3-1 20N60S5 Q67040-S4751 P-TO263-3-2 SPP20N60S5 20n60s5 4252 spp20n60 Q67040-S4751 SPB20N60S5

    20n60s5

    Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
    Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor

    75V-8V

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 75V-8V

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Text: 20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    PDF SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s

    SPP20N60S5

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5

    20n60s

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s

    Untitled

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5

    20N60S5

    Abstract: 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s

    SPW20N60S5

    Abstract: No abstract text available
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan
    PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5

    20N60S5

    Abstract: No abstract text available
    Text: SIEMENS 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan
    PDF SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
    Text: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘


    OCR Scan
    PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 SPB20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O smd diode sm i7 siemens 350 98 Q67040-S4751

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
    Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances


    OCR Scan
    PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5