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    210A Search Results

    210A Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    142-10A08 Coilcraft Inc RF inductor, tunable, aluminum core, shielded, RoHS Visit Coilcraft Inc Buy
    142-10A08L Coilcraft Inc NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) Visit Coilcraft Inc Buy
    TPS2210APWP Texas Instruments 1A Single-Slot PC Card Power Switch w/ Serial Interface 24-HTSSOP -40 to 85 Visit Texas Instruments Buy
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    210A Price and Stock

    Kyocera AVX Components 1210AC272KAT1A

    CAP CER 2700PF 1KV X7R 1210
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    DigiKey 1210AC272KAT1A Cut Tape 7,388 1
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    Diodes Incorporated ZVN4210A

    MOSFET N-CH 100V 450MA TO92-3
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    DigiKey ZVN4210A Bulk 4,096 1
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    TME ZVN4210A 1
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    Avnet Silica ZVN4210A 10 Weeks 4,000
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    New Advantage Corporation ZVN4210A 4,000 1
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    Win Source Electronics ZVN4210A 11,900
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    Vishay Techno CRMV1210AF470KFKEF

    CRMV1210, 3-SIDED, SOLDER COATED
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    CRMV1210AF470KFKEF Digi-Reel 4,000 1
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    Vishay Techno CRMV1210AF2K70FKEF

    CRMV1210, 3-SIDED, SOLDER COATED
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    DigiKey CRMV1210AF2K70FKEF Reel 4,000 4,000
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    Vishay Techno CRMA1210AF549KDKEF

    CRMA1210, 3-SIDED, NICKEL BARRIE
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    DigiKey CRMA1210AF549KDKEF Digi-Reel 3,962 1
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    210A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    210A Allen-Bradley Cermet Resistor Networks, SIP Scan PDF
    210A100 Control Sciences Sine/cosine power oscillator Scan PDF
    210A101 Control Sciences Sine/cosine power oscillator Scan PDF
    210A102 Control Sciences Sine/cosine power oscillator Scan PDF
    210A103 Control Sciences Sine/cosine power oscillator Scan PDF
    210A200 Control Sciences Resolver Excitation Oscillator, 150mA Programmable Scan PDF
    210A200IT Control Sciences Resolver Excitation Oscillator, 150mA Programmable Scan PDF

    210A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BCM Bus Converter BCM48B x 030 y 210A00 S C NRTL US Unregulated DC-DC Converter FEATURES DESCRIPTION The VI Chip® bus converter is a high efficiency >94% Sine Amplitude Converter (SAC™) operating from a 38 to 55 Vdc primary bus to deliver an isolated, unregulated 2.4 to 3.4


    Original
    BCM48B 210A00 BCM48BF030T210A00 PDF

    HFA210NJ60D

    Abstract: IRFP250 PD-2515
    Text: PD -2.515 rev. A 02/99 HFA210NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC V R = 600V V F typ. ƒ = 1.2V IF(AV) = 210A Qrr (typ.) = 450nC


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    HFA210NJ60D 450nC HFA210NJ60D IRFP250 PD-2515 PDF

    lineage 2000 power plant ECS

    Abstract: KS20289 lineage 2000 ecs power plant controller 847307410 BL2W ECS CONTROLLER T-82673-30 resistor ks20289 KS20289L6C lineage 2000 power plant controller
    Text: Product Manual J85501X-1 Lists K1, K2, K3 Select Code 157-010-200 Comcode 107224446 Issue 5 March 1998 Lucent Technologies Lineage 2000 Battery Thermal Protection 210A Control Module Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.


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    J85501X-1 lineage 2000 power plant ECS KS20289 lineage 2000 ecs power plant controller 847307410 BL2W ECS CONTROLLER T-82673-30 resistor ks20289 KS20289L6C lineage 2000 power plant controller PDF

    Untitled

    Abstract: No abstract text available
    Text: BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GB 120 DN2 1200V 210A IC Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter


    Original
    C67076-A2108-A70 Oct-21-1997 PDF

    vfc 1200

    Abstract: BSM150GAL120DN2E3166 C67076-A2112-A70 dc chopper circuit
    Text: BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM150GAL120DN2E31661200V 210A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2112-A70


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    BSM150GAL120DN2E3166 C67076-A2112-A70 Nov-08-1996 vfc 1200 BSM150GAL120DN2E3166 C67076-A2112-A70 dc chopper circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: BSM 150 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GAL 120 DN2 1200V 210A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70


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    C67076-A2013-A70 Nov-24-1997 Sep-21-98 PDF

    BU 4520

    Abstract: 2N6962 TO210AC
    Text: IflE D SILICONIX INC • ÖSS47BS GOISCH? 1 ■ f 2N6962 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61 Isolated Case TOP VIEW This device contains beryllium oxide PRODUCT SUMMARY ■d V (BRJDSS 100


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    flSS47BS 2N6962 MIL-S-19500/568 O-210AC 1008C BU 4520 TO210AC PDF

    Untitled

    Abstract: No abstract text available
    Text: D465_TLA6T 1/2 LAN Components TLA-6T207A/208A/209A/210A 10/100BASE-TX Pulse Transformers FEATURES • Low profile(H=2.1mm max.) for PCMCIA(PC card). • 2 pulse transformers and 2 common-mode chokes are integrated into 14-pin SMD package. • Greater than 350µH[100kHz] at DC current bias 8mA.


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    10/100BASE-TX 14-pin 100kHz] TLA-6T207A 78Q2120, ICS1890, ML6673, TLA-6T208A QS6611. TLA-6T209A PDF

    IRFP3703

    Abstract: No abstract text available
    Text: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated


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    3917A IRFP3703 O-247AC IRFP3703 PDF

    IXGX320N60A3

    Abstract: No abstract text available
    Text: IXGK320N60A3 IXGX320N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 210A VCE sat  1.30V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M


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    IXGK320N60A3 IXGX320N60A3 IC110 O-264 320N60A3 3-08-A IXGX320N60A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 210A  14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings


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    IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3 PDF

    KAQY210A

    Abstract: KAQY210
    Text: High Voltage, Photo DEMos Relay KAQY210/210A UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQY210 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA 5. Low ON-Resistance


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    KAQY210/210A E108430) EN60950 FI13698) KAQY210 350VAC 130mA 00V/ms 3750VACrms KAQY210A KAQY210A KAQY210 PDF

    KAQV210AB

    Abstract: KAQV210B
    Text: High Voltage, Photo DEMos Relay KAQV210B/210AB UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQV210B 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA 5. Low ON-Resistance


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    KAQV210B/210AB E108430) EN60950 FI13698) KAQV210B 350VAC 130mA 00V/ms 3750VACrms KAQV210AB KAQV210AB KAQV210B PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


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    IXFB210N20P 200ns PLUS264TM 100ms 210N20P 5-10-A PDF

    Untitled

    Abstract: No abstract text available
    Text: euoec F BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter


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    C67076-A2108-A70 Oct-21-1997 PDF

    BSM150GAL120DN2

    Abstract: C67076-A2013-A70
    Text: BSM 150 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GAL 120 DN2 1200V 210A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70


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    C67076-A2013-A70 BSM150GAL120DN2 C67076-A2013-A70 PDF

    2N986

    Abstract: schematic diagram RPM meter transistor T K 2056 diak
    Text: M 1 L - S - 1 9 5 0 0 / 210I3 NAV Y 21 m a r c h 1969 _ S U P E R S E D IN G M1L-S-19500/210A(NAV Y) 20 September 1961 M IL IT A R Y S P E C IF IC A T IO N SEM IC O N D U C T O R D E V IC E , 1. T R A N S IS T O R , N PN , S IL IC O N , PH O T O -rypp 2N9§6


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    MIL-S-19500/210B MIL-S-19500/2 M1L-S-19500, 2N986. 2N986 schematic diagram RPM meter transistor T K 2056 diak PDF

    Untitled

    Abstract: No abstract text available
    Text: DB LECTRO Inc. High Voltage, Photo Mos Relay KAQW210/210A E D UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQW210 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA


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    KAQW210/210A E108430) EN60950 FI13698) KAQW210 350VAC 130mA 00V/ms 3750VACrms KAQW210A PDF

    TLA-6T207A

    Abstract: TDK Pulse Transformers 6T210A smd PULSE TRANSFORMER TDK common mode choke 78Q2120 ICS1890 ML6673 QS6611 QS6612
    Text: D465_TLA6T 1/2 LAN Components TLA-6T207A/208A/209A/210A 10/100BASE-TX Pulse Transformers FEATURES • Low profile(H=2.1mm max.) for PCMCIA(PC card). • 2 pulse transformers and 2 common-mode chokes are integrated into 14-pin SMD package. • Greater than 350µH[100kHz] at DC current bias 8mA.


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    TLA-6T207A/208A/209A/210A 10/100BASE-TX 14-pin 100kHz] TLA-6T207A 78Q2120, ICS1890, ML6673, TLA-6T208A QS6611. TDK Pulse Transformers 6T210A smd PULSE TRANSFORMER TDK common mode choke 78Q2120 ICS1890 ML6673 QS6611 QS6612 PDF

    LVDT to Digital

    Abstract: lvdt 210A200 lvdt and information 10 bit Controlled Oscillator
    Text: resolver excitation oscillator 150mA programmable series 210A200 FEATURES • 2.0" x 2.0" x 0.4" micro-module ■ Up to 15Vrms output ■ 10 bit amplitude control ■ Eight frequency ranges, 400Hz to 5000Hz ■ Short circuit and overload protection ■ Thermal cut-off protection


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    210A200 15Vrms 400Hz 5000Hz 210A200 240h5T7 0001D52 LVDT to Digital lvdt lvdt and information 10 bit Controlled Oscillator PDF

    IXTK210P10T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK210P10T IXTX210P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings


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    IXTK210P10T IXTX210P10T 200ns O-264 PLUS247 -100A 210P10T PDF

    d0109

    Abstract: sanken power transistor FMEN-210A 210A
    Text: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters


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    FMEN-210A Package---TO220F FMEN-210A D01-090EA-060310 d0109 sanken power transistor 210A PDF

    b061

    Abstract: 25CC B062 KAQW210 KAQW210A
    Text: cosmo High Voltage, Solid State Relay-MOSFET Output KAQW210/210A UL 1577/ UL 508 File NO.E108430 , Fl EN60950 (File NO.FI13698) Features KAQW210 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA


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    KAQW210/210A E108430) EN60950 FI13698) 350VAC 130mA 00V/ms 3750VACrms 130mA 500mW b061 25CC B062 KAQW210 KAQW210A PDF

    siemens igbt BSM 150 gb 100 d

    Abstract: siemens igbt BSM 100 gb siemens igbt BSM 300 siemens igbt chip a2108 C67076-A2108-A70 siemens igbt
    Text: SIEMENS BSM 150 GB 120 DN2 CT=> 3SS IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 VCE lc 1200V 210A Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings


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    C67076-A2108-A70 -V-100 Mar-28-1996 siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb siemens igbt BSM 300 siemens igbt chip a2108 C67076-A2108-A70 siemens igbt PDF