Untitled
Abstract: No abstract text available
Text: aixYS Advanced Technical Information HiPerFET Power MOSFETs p bss DS on K IXFK/IXFX 26N90 900 V 26 A 0.30 Q. 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Q. 250 ns V DSS • Single MOSFET Die Maximum Ratings Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RGS= 1 M il
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26N90
25N90
25N90
O-264AA
215BSC
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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264AA
Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Text: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C
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IXFK33N50
IXFK35N50
to150
33N50
35N50
O-264AA
264AA
SMD-264
TO264AA
smd diode 513
TO-264-aa
diode 253
TO-264AA
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C-0120
Abstract: No abstract text available
Text: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE
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T0-204AA
C-0120
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G 50N60
Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C
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50N50BU1
50N60BU1
100ns
120ns
50N50
50N60
O-264
G 50N60
igbt 100a
IXGH50N60B
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IXFN27N80
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFK IXFK IXFN IXFN N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowt^ 27N80 25N80 27N80 25N80 D v DSS ^D25 800 V 800V 800 V 800 V 27 A 25 A 27 A 25 A DS on 0.30 n 0.35 O 0.30 Q 0.35 O TO-264AA(IXFK) Symbol vw DSS Test Conditions
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27N80
25N80
25N80
O-264AA
IXFN27N80
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