Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    25N90 Search Results

    SF Impression Pixel

    25N90 Price and Stock

    IXYS Corporation IXFX25N90

    MOSFET N-CH 900V 25A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX25N90 Tube 30
    • 1 -
    • 10 -
    • 100 $11.30733
    • 1000 $11.30733
    • 10000 $11.30733
    Buy Now
    Mouser Electronics IXFX25N90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Corporation IXFR25N90

    MOSFET N-CH 900V 25A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR25N90 Tube 30
    • 1 -
    • 10 -
    • 100 $12.37633
    • 1000 $12.37633
    • 10000 $12.37633
    Buy Now
    Mouser Electronics IXFR25N90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Corporation IXFK25N90

    MOSFET N-CH 900V 25A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK25N90 Tube 25
    • 1 -
    • 10 -
    • 100 $12.7372
    • 1000 $12.7372
    • 10000 $12.7372
    Buy Now
    Mouser Electronics IXFK25N90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    IXYS Corporation IXFN25N90

    MOSFET N-CH 900V 25A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN25N90 Tube 10
    • 1 -
    • 10 $20.968
    • 100 $20.968
    • 1000 $20.968
    • 10000 $20.968
    Buy Now
    Mouser Electronics IXFN25N90
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    SiTime Corporation SIT1408BC-23-25N-90.000000D

    OSCILLATOR, SIT1408, -20 to 70C, 3225, 50ppm, 2.5V, 90MHz, OE, T&R - Tape and Reel (Alt: SIT1408BC-23-25N-90.000000D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1408BC-23-25N-90.000000D Reel 12 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.60851
    Buy Now

    25N90 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    25N90 IXYS HiPerFET Power MOSFETs Original PDF

    25N90 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    26N90 25N90 247TM 25N90 125oC PDF

    26N90

    Abstract: IXFN26N90 125OC 25N90 IXFN25N90 max1828
    Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions


    Original
    26N90 25N90 OT-227 E153432 26N90 IXFN26N90 125OC 25N90 IXFN25N90 max1828 PDF

    125OC

    Abstract: 25N90 26N90
    Text: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    26N90 25N90 247TM 25N90 125oC 125OC PDF

    26N90

    Abstract: No abstract text available
    Text: VDSS Power MOSFETs Single Die MOSFET ID cont RDS(on) 26 A 25 A 0.30 Ω 0.33 Ω IXTN 26N90 900 V IXTN 25N90 900 V N-Channel Enhancement Mode D G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    26N90 25N90 26N90 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions


    Original
    26N90 25N90 25N90 Figure10. IXFN26N90 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


    Original
    26N90 25N90 25N90 247TM O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont 900 V 900 V 26 A 25 A RDS(on) trr 0.30 Ω 250 ns 0.33 Ω 250 ns D G Preliminary data sheet S S Symbol Test Conditions


    Original
    26N90 25N90 25N90 PDF

    fast IXFX

    Abstract: 125OC 25N90 26N90 IDSS
    Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original
    26N90 25N90 247TM O-264 fast IXFX 125OC 25N90 26N90 IDSS PDF

    IXFN26N90

    Abstract: 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET 25N90 IXFN26N90 VDSS ID25 RDS on 900V 25A 900V 26A 330mΩ Ω 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings


    Original
    IXFN25N90 IXFN26N90 OT-227 E153432 25N90 26N90 IXFN26N90 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original
    ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original
    O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original
    O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original
    AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    IXFX25N90

    Abstract: IXFX26N90
    Text: HiPerFETTM Power MOSFETs 25N90 25N90 IXFK26N90 IXFX26N90 VDSS ID25 RDS on 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 O-264 25N90 26N90 PLUS247 IXFX25N90 IXFX26N90 PDF

    LQ25

    Abstract: 0B4 DC-DC
    Text: inixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET v D DSS 900 V 900 V IXFN 26N90 IXFN 25N90 bss 26 A 25 A DS on tr r 0.30 Q 250 ns 0.33 Q 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions


    OCR Scan
    IXFN26N90 IXFN25N90 Cto150 26N90 25N90 LQ25 0B4 DC-DC PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol


    OCR Scan
    26N90 25N90 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: aixYS Advanced Technical Information HiPerFET Power MOSFETs p bss DS on K IXFK/IXFX 26N90 900 V 26 A 0.30 Q. 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Q. 250 ns V DSS • Single MOSFET Die Maximum Ratings Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RGS= 1 M il


    OCR Scan
    26N90 25N90 25N90 O-264AA 215BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS Single MOSFET Die Maximum Ratings Symbol Test Conditions v Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 900 900 V V Continuous Transient ±20 ±30 V V 26 25 104 100 26 25 A


    OCR Scan
    26N90 25N90 26N90 25N90 PDF

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan
    ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q PDF

    wabash

    Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
    Text: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 25N90 25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss


    OCR Scan
    IXGH25N80, IXGM25N80, IXGH25N80 IXGM25N80 IXGH25N90 IXGH25N100 IXGM25N90 IXGM25N100 wabash 25N80A LHi 978 25n80 25N100 25N90 PDF

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan
    67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 PDF