Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    225PCS Search Results

    SF Impression Pixel

    225PCS Price and Stock

    PEPPERL+FUCHS GmbH IUC77-28L90-M-FR2-25PCS

    IDENT RFID (INDUCTIVE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IUC77-28L90-M-FR2-25PCS Box 1
    • 1 $60.42
    • 10 $60.42
    • 100 $60.42
    • 1000 $60.42
    • 10000 $60.42
    		Buy Now

    PEPPERL+FUCHS GmbH IUC76-28L90-M-FR2 25PCS

    Ident Rfid (Inductive) |Pepperl+Fuchs Pa IUC76-28L90-M-FR2 25PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IUC76-28L90-M-FR2 25PCS Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    PEPPERL+FUCHS GmbH IUC77-28L90-M-FR2 25PCS

    Ident Rfid (Inductive) |Pepperl+Fuchs Pa IUC77-28L90-M-FR2 25PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IUC77-28L90-M-FR2 25PCS Bulk 1
    • 1 $69.33
    • 10 $69.33
    • 100 $62.29
    • 1000 $60.18
    • 10000 $60.18
    		Buy Now

    PEPPERL+FUCHS GmbH IUC76-28L90-M-FR2 25PCS (ALTERNATE: 293919)

    Ident Rfid (Inductive) | Pepperl+Fuchs Factory Automation IUC76-28L90-M-FR2 25PCS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IUC76-28L90-M-FR2 25PCS (ALTERNATE: 293919) Bulk 3 1
    • 1 $66.61
    • 10 $61.95
    • 100 $61.95
    • 1000 $61.95
    • 10000 $61.95
    		Buy Now

    PEPPERL + FUCHS AUTOMATION IUC76-28L90-M-FR2 25PCS

    RFID Transponder, Data carrier, Op: 902-928 MHz, Linear Polar, Memory bank: 00/01/10/11: 64/96-480/96/512bits, Higgs-3, Adhesive Install
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Neutron USA IUC76-28L90-M-FR2 25PCS 3
    • 1 $172.51
    • 10 $172.51
    • 100 $172.51
    • 1000 $172.51
    • 10000 $172.51
    		Buy Now

    225PCS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack


    Original     		PDF MS-0020 MS-0020 225pcs Room2321 CA95110

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack


    Original     		PDF MS-0020 MS-0020 225pcs E79-5777 Room2321 CA95110

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack


    Original     		PDF MS-0020 MS-0020 225pcs

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack


    Original     		PDF MS-0020 MS-0020 225pcs E79-5777 Room2321 CA95110

    MS-0020

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack


    Original     		PDF MS-0020 MS-0020 225pcs

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.2. Shipped in tray 225pcs per pack


    Original     		PDF MS-0020 MS-0020 225pcs

    R1LP0108ESA-7SR

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		PDF R1LP0108E R10DS0151EJ0100 072-word 32-pin R1LP0108ESA-7SR

    Untitled

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		PDF R1LP0108E R10DS0029EJ0300 072-word 32-pin

    m04a

    Abstract: MS-0040
    Text: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。


    Original     		PDF MS-0040 MS0040 225pcs/pack m04a MS-0040

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。


    Original     		PDF MS-0020 MS0020 225pcs

    R1LP0108ESP

    Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		PDF R1LP0108E R10DS0029EJ0200 072-word 32-pin R1LP0108ESP R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。


    Original     		PDF MS-0020 MS0020 225pcs

    M04A

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。


    Original     		PDF MS-0040 MS0040 225pcs/pack M04A

    半導体磁気抵抗素子

    Abstract: MS-0020 m02a
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。


    Original     		PDF MS-0020 MS0020 225pcs 半導体磁気抵抗素子 MS-0020 m02a

    Untitled

    Abstract: No abstract text available
    Text: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0300 Rev.3.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher


    Original     		PDF R1LV0108E R10DS0049EJ0300 072-word 32-pin

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。


    Original     		PDF MS-0020 MS0020 225pcs

    Untitled

    Abstract: No abstract text available
    Text: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0152EJ0100 Rev.1.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher


    Original     		PDF R1LV0108E R10DS0152EJ0100 072-word 32-pin

    Untitled

    Abstract: No abstract text available
    Text: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher


    Original     		PDF R1LP0408D 512-kword R10DS0104EJ0200 32-pin 55/70ns

    BL-AT1Z13

    Abstract: No abstract text available
    Text: LED LIGHT BAR, ARROW DISPLAY BL-AT1Z13 Features: Ø ARROW DISPLAY, 13mm small triangle Ø Ultra brightness available Ø Low current operation. Ø Excellent character appearance. Ø Easy mounting on P.C. Boards or sockets. Ø I.C. Compatible. Electrical-optical characteristics: Ta=25°C


    Original     		PDF BL-AT1Z13 BL-AT1Z13S-XX BL-AT1Z13D-XX BL-AT1Z13UR-XX BL-AT1Z13E-XX 225pcs/bag BL-AT1Z13

    Untitled

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0020 MS-0020は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.2のA/B相を出力します。


    Original     		PDF MS-0020 MS0020 225pcs

    M04A

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。


    Original     		PDF MS-0040 MS0040 225pcs/pack M04A

    M04A

    Abstract: No abstract text available
    Text: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040は SON型InSb半導体磁気抵抗素子です。バイアス磁石と組み合わせることにより高精度に 回転角を検出することができます。モジュールm=0.4のA/B相を出力します。


    Original     		PDF MS-0040 MS0040 225pcs/pack M04A

    R1LP0408D

    Abstract: R1LP0408DSB-5 R1LP0408DSP 032P2S-A R1LP0408DSB-5SI R1LP0408DSB R1LP0408DSP-7SI R10DS0104EJ0200 R1LP0408DSP-5SR R1LP0408DSP-5SI
    Text: R1LP0408D Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0104EJ0200 Rev.2.00 2012.5.30 Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher


    Original     		PDF R1LP0408D 512-kword R10DS0104EJ0200 32-pin 55/70ns R1LP0408DSB-5 R1LP0408DSP 032P2S-A R1LP0408DSB-5SI R1LP0408DSB R1LP0408DSP-7SI R1LP0408DSP-5SR R1LP0408DSP-5SI

    R1LV0108ESA-7SR

    Abstract: r1lv0108 R1LV0108ESP R1LV0108ESP-7SI R1LV0108E R1LV0108ESF-5SI R1LV0108ESF-7SR R1LV0108ESF-7SI#S0 r1lv0108esa-7sr#s0 R1LV0108ESA
    Text: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0200 Rev.2.00 2011.01.14 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher


    Original     		PDF R1LV0108E R10DS0049EJ0200 072-word 32-pin R1LV0108ESA-7SR r1lv0108 R1LV0108ESP R1LV0108ESP-7SI R1LV0108ESF-5SI R1LV0108ESF-7SR R1LV0108ESF-7SI#S0 r1lv0108esa-7sr#s0 R1LV0108ESA