PN3563 equivalent
Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
Text: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å
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Original
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CP317
CMPT918
2N918
2N2857
2N5179
2N5770
BFY90
PN3563
PN3564
22-March
PN3563 equivalent
2N5770
2n918 transistor
2n918 die
2N2857
2N5179
2N918
BFY90
CMPT918
CP317
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PDF
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CP318V
Abstract: MPS455
Text: PROCESS CP318V Small Signal Transistor NPN - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS ± 0.6 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization
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Original
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CP318V
MPS455
22-March
CP318V
MPS455
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PDF
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CP394R
Abstract: CEDM7004
Text: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å
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CP394R
CEDM7004
22-March
CP394R
CEDM7004
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PDF
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CP353V
Abstract: CZT853
Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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Original
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CP353V
CZT853
22-March
CP353V
CZT853
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PDF
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CPD05
Abstract: 1N4001 1N3611 1N3614 1N4007 1N4245 1N4249 1N5059 1N5062 1N5391
Text: PROCESS CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 36 x 36 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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Original
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CPD05
1N3611
1N3614
1N4001
1N4007
1N4245
1N4249
1N5059
1N5062
1N5391
CPD05
1N3614
1N4007
1N4249
1N5062
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PDF
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1N5400
Abstract: 1N5408 1N5550 1N5554 1N5624 1N5627 CMR3-02 CPD06
Text: PROCESS CPD06 General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 89 x 89 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 66 x 66 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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Original
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CPD06
1N5400
1N5408
1N5550
1N5554
1N5624
1N5627
CMR3-02
22-March
1N5408
1N5554
1N5627
CPD06
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PDF
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2N2484
Abstract: CMPT2484 CMPT5088 CMPT5089 CMPT6428 CMPT6429 CP188
Text: PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization
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Original
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CP188
CMPT2484
CMPT5088
CMPT5089
CMPT6428
CMPT6429
2N2484
22-March
2N2484
CMPT2484
CMPT5088
CMPT5089
CMPT6428
CMPT6429
CP188
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PDF
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"Darlington Transistor"
Abstract: CJD127 CP630 CZT127
Text: PROCESS CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å
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Original
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CP630
CZT127
CJD127
22-March
"Darlington Transistor"
CJD127
CP630
CZT127
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PDF
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CJD42C
Abstract: CP611 TIP42C r5 transistor
Text: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 46 MILS Top Side Metalization Al - 30,000Å
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Original
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CP611
CJD42C
TIP42C
22-March
CJD42C
CP611
TIP42C
r5 transistor
|
PDF
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1N5806
Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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Original
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CPD17
1N5802
1N5806
UES1101
UES1106
CMR3U-01
22-March
1N5806
CPD17
UES1106
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PDF
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CMLM2205
Abstract: CMLT2207 CMKT2207 CMLT2222A cp191v 699 NPN
Text: PROCESS CP191V Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization
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Original
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CP191V
CMLT2222A
CMLT2207
CMLM2205
CMKT2207
22-March
CMLM2205
CMLT2207
CMKT2207
CMLT2222A
cp191v
699 NPN
|
PDF
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CP312
Abstract: CZT3120 chip die npn transistor
Text: PROCESS CP312 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 70 x 70 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 11.4 x 18.1 MILS Emitter Bonding Pad Area 13.8 x 23.6 MILS Top Side Metalization Al - 30,000Å
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Original
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CP312
CZT3120
22-March
CP312
CZT3120
chip die npn transistor
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PDF
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LWH1035N
Abstract: STCF01 STPS1L40M VLF5014A
Text: AN2243 Application note Step up converter for camera flash light Introduction STCF01 is a dedicated IC to drive up to four white LEDs with constant current in camera flash for cellular phones. It provides up to 300mA over an input voltage range of 2.6V to 5.5V. A high
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Original
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AN2243
STCF01
300mA
LWH1035N
STPS1L40M
VLF5014A
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PDF
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Untitled
Abstract: No abstract text available
Text: PROCESS CPD77X Schottky Rectifier 3 Amp Schottky Rectifier Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 61 x 61 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 55 x 55 MILS Top Side Metalization Ti/Ag - 2,500Å/30,000Å Back Side Metalization
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Original
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CPD77X
CTLSH3-30M833
22-March
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PDF
|
|
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CMPZ5267B
Abstract: No abstract text available
Text: PROCESS CPZ28 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13 x 13 MILS Die Thickness 7.8 MILS Anode Bonding Pad Area 7.0 x 7.0 MILS Top Side Metalization Ti/Al - 13,000Å Back Side Metalization Au-As - 13,000Å GEOMETRY
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Original
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CPZ28
CMPZ5221B
CMPZ5267B
22-March
CMPZ5267B
|
PDF
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Untitled
Abstract: No abstract text available
Text: PROCESS CPD87R Schottky Diode Low Leakage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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Original
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CPD87R
22-March
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PDF
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Untitled
Abstract: No abstract text available
Text: CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN ENHANCED SPECIFICATION SURFACE MOUNT SILICON DUAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E are surface mount silicon transistors with enhanced specifications
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Original
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CMLT5078E
CMLT5087E
CMLT5088E
CMLT5078E,
CMLT5087E,
CMLT5078E:
CMLT5087E:
CMLT5088E:
OT-563
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PDF
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mje182 equivalent
Abstract: MJE182 cp208 transistor CR NPN CJD31C TIP31C
Text: PROCESS CP208 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å
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Original
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CP208
CJD31C
MJE182
TIP31C
22-March
mje182 equivalent
MJE182
cp208
transistor CR NPN
CJD31C
TIP31C
|
PDF
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CP710
Abstract: CMPTA94 CXTA94 CZTA94 MPSA94
Text: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization
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Original
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CP710
CMPTA94
CXTA94
CZTA94
MPSA94
22-March
CP710
CMPTA94
CXTA94
CZTA94
MPSA94
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PDF
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2N2907A die
Abstract: 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A
Text: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization
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Original
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CP591V
2N2905A
2N2907A
CMPT2907A
CMST2907A
CXT2907A
CZT2907A
PN2907A
22-March
2N2907A die
2N2907A
PN2907A
equivalent 2N2907A
2N2905A
CMPT2907A
CMST2907A
CP591V
CXT2907A
CZT2907A
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PDF
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diode S 335
Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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Original
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
diode S 335
1n4148 die
1n4148
1n4148 die chip
1N4154
1N4448
1N4454
1N914
DIODE CHIP 1N4148
CMPD2836
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PDF
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CPD73
Abstract: No abstract text available
Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)
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Original
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CPD73
22-March
CPD73
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PDF
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1N5807
Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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Original
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CPD18
1N5807
1N5811
UES1301
UES1306
UES1401
UES1403
CUDD8-02
22-March
1N5811
CPD18
UES1306
UES1403
|
PDF
|
DIODE 720
Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Text: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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Original
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CPD48V
22-March
DIODE 720
"Schottky Diode"
DIODE R3
CPD48V
high current schottky diode
|
PDF
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