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    22N55 Search Results

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    22N55 Price and Stock

    IXYS Corporation IXFH22N55

    MOSFET N-CH 550V 22A TO247AD
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    DigiKey IXFH22N55 Tube 50
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    OMRON Industrial Automation WLCA2-2N55

    SWITCH LIMIT ROLLER LEVER
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    DigiKey WLCA2-2N55 Bulk
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    ITT Interconnect Solutions KJ6T22N55SN

    CIRCULAR
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    DigiKey KJ6T22N55SN Bulk 25
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    Newark KJ6T22N55SN Bulk 25
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    Interstate Connecting Components KJ6T22N55SN
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    Master Electronics KJ6T22N55SN
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    ITT Interconnect Solutions KJ6T22N55PN

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    DigiKey KJ6T22N55PN Bulk 25
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    Mouser Electronics KJ6T22N55PN
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    TE Connectivity 5022N5522-9

    5022N5522-9
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    DigiKey 5022N5522-9 Bulk 2,500
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    Sager 5022N5522-9 1
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    22N55 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    22N55

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original
    PDF O-247

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original
    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    22N55

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original
    PDF O-247 100ms 22N55

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original
    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: □ 1XYS IXFH 22N55 ’reliminary Data HiPerFET“Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low t„ Symbol Test Conditions V*D SS ^ = 25°C to 150°C 550 V VDGR ^ = 25°C to 150°C; RGS = 1 M£2 550 V V GS Continuous ±20 V vw GSM


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    PDF 22N55

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


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    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


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    PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


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    PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B