23C2100 Search Results

23C2100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MX23C2100 Abstract: No abstract text available Text: Introduction Selection Guide 23C2100 2M-BIT 256K x 8/128K x 16 CMOS MASK ROM FEATURES • • • • • Switchable organization - 256K x 8(byte mode) - 128K x 16(word mode) • Single +5V power supply • Fast access time: 150/200ns • Totally static operation	Original	PDF	MX23C2100 8/128K 150/200ns MX23C2100 CA95131
23c2100 Abstract: 8088 microprocessor circuit diagram MX23C2100 23C2100-15 Text: INDEX 23C2100 2M-BIT [256K x 8/128K x 16] CMOS MASK ROM FEATURES • Switchable organization - 256K x 8 byte mode - 128K x 16 (word mode) • Single +5V power supply • Fast access time:150/200ns • Totally static operation • • • • Completely TTL compatible	Original	PDF	MX23C2100 8/128K 150/200ns 100uA MX23C2100 150/200ns. PM0134 23c2100 8088 microprocessor circuit diagram 23C2100-15
Untitled Abstract: No abstract text available Text: m A M X 2 3 C 2 1O O MACRONIX. INC. 2 M - B I T 2 5 6 K x C M 8 O / 1 S M S 8 K A S K x 1 6 1 R O M FEATURES Completely TTL compatible Operating current: 60mA Standby current: 100\|iA Package - 40 pin DIP(600 rfiil • Switchable organization - 256K x 8(byte mode)	OCR Scan	PDF	MX23C21OO 150/200ns MX23C2100 DQ00SS7 MX23C2100 MX23C2100PC-15 MX23C2100PC-20
23c2100 Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15 Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7	OCR Scan	PDF	KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Untitled Abstract: No abstract text available Text: • ■ ■ ■ : M X 2 3 C 2 1 OO '■ ■ ; 2M-BIT [256K x 8/128K x 161 CMOS MASK ROM FEATURES • Switchable organization - 256K x 8 byte mode - 1 28K x 16 (word mode) • Single +5V power supply • Fast access time:150/200ns • Totally static operation	OCR Scan	PDF	X23C21 8/128K 150/200ns 100uA MX23C2100 150/200ns. PM0134
Untitled Abstract: No abstract text available Text: MA CR ONI X INC 53E D • 00DD3SS GT1 ■ nACX P R IU R IIN A R V l ¥ l J k . , M X23C21OO MACRONIX. INC. B M -B rT X e B B K x B / ie S K x 1 B C M O S M A S K R O M FEATURES Completely TTL compatible Operating current: 60mA Standby current: 10O^A Package	OCR Scan	PDF	00DD3SS MX23C21OO 150/200ns MX23C2100 44-PIN
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	PDF	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
23c2100 Abstract: KM23C2 Text: KM23C2ÎO0A CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x a Word Mode: 131,072 x 16 • Fast access time: 100ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	PDF	KM23C2 8/128K 100ns 40-pln 23C2100A KM23C210QA-12 KM23C2100A-15 KM23C2100A KM23C2100A) 23c2100