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Catalog Datasheet	MFG & Type	Document Tags	PDF
01C09 Abstract: No abstract text available Text: GoldStar 23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex	OCR Scan	GM23C32000FW 16BIT 23C32000FW 44-SOP, 100pF* 402fl757 00D4D4f 01C09	PDF
23C32000a Abstract: ICX 639 23c3200 Text: 23C32000A LG Semicon Co.,Ltd. 2,097,152 x 16 BIT CMOS MASK ROM Pin Configuration Description 42 DIP The G M 23C32000A high performance read only memory is organized as 2,097,152 x 16 bits and has an access time o f 120/150ns. It needs no external control clock to assure simple operation, because of	OCR Scan	GM23C32000A 120/150ns. 23C32000A GM23C32000A 120/150ns ICX 639 23c3200	PDF
23C32000 Abstract: No abstract text available Text: CMOS MASK ROM 23C32000C 32M-Bit 2Mx16 CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • • • • The KM 23C32000C is a fully static m ask program m able ROM • • • • 2,097,152x16 bit organization Fast access tim e : 100ns(Max.) Supply voltage : single +5V	OCR Scan	KM23C32000C 32M-Bit 2Mx16) 152x16 100ns 23C32000C 42-DIP-600 23C32000C 23C32000	PDF
23C32000 Abstract: No abstract text available Text: 23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)	OCR Scan	KM23C32000AG 32M-BH 120ns 32000AG P-600 23C32000AG 304x8bit 152x16bit 0D313SQ 23C32000	PDF
23C32000 Abstract: 23C32000CT 23c3200 Text: 23C32000C E T_ CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V	OCR Scan	KM23C32000C 32M-Bit 2Mx16) 304x8 152x16 100ns 23C32000C 44-TSQ P2-400 23C32000 23C32000CT 23c3200	PDF
MB8316200 Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S	OCR Scan	23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B	PDF
23C32000 Abstract: 23c3200 M23C32000 Text: GoldStar 23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because	OCR Scan	GM23C32000 120/150ns. 42-DIP, DDD4D44 23C32000 23c3200 M23C32000	PDF
23c3200 Abstract: 23C32000 Text: CMOS MASK ROM 23C32000CG 32M-Bit 4Mx8 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption	OCR Scan	KM23C32000CG 32M-Bit 2Mx16) 304x8 152x16 100ns 23C32000CG 44-SQ P-600 23C32000CG 23c3200 23C32000	PDF
23C3200 Abstract: 23C32000 Text: 23C32000C CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50(jA(Max.) • Fully static operation	OCR Scan	KM23C32000C 32M-Bit 2Mx16) 152x16 100ns 42-OIP-600 KM23C32000C 100pF 23C3200 23C32000	PDF