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    23S1C Search Results

    23S1C Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    SLW23S-1C7LF Amphenol Communications Solutions 1.00mm Flex Connectors, SLW-S series, 23 Position, Top Entry ZIF Connector, 1mm (0.039inch) Pitch, Kinked Terminal Visit Amphenol Communications Solutions
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    23S1C Price and Stock

    Electro Switch Corporation A223S1CWZQ

    SWITCH TOGGLE DPDT 6A 125V
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    DigiKey A223S1CWZQ Bulk 11 1
    • 1 $18.45
    • 10 $16.544
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    Mouser Electronics A223S1CWZQ 50
    • 1 $17.38
    • 10 $15.79
    • 100 $12.68
    • 1000 $11.45
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    Master Electronics A223S1CWZQ
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    • 10 $15.17
    • 100 $8.31
    • 1000 $7.58
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    Neutron USA A223S1CWZQ 24
    • 1 $71.97
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    Electro Switch Corporation A423S1CWZG

    SWITCH TOGGLE 4PDT 6A 125V
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    DigiKey A423S1CWZG Bulk 1
    • 1 $55.09
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    Mouser Electronics A423S1CWZG
    • 1 $54
    • 10 $49.86
    • 100 $40.26
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    Electro Switch Corporation A123S1CWZG

    SWITCH TOGGLE SPDT 6A 125V
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    DigiKey A123S1CWZG Bulk 1
    • 1 $18.41
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    Electro Switch Corporation A123S1CXZG

    SWITCH TOGGLE SPDT 6A 125V
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    DigiKey A123S1CXZG Bulk 1
    • 1 $14.97
    • 10 $14.97
    • 100 $14.97
    • 1000 $14.97
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    Electro Switch Corporation A223S1CWZG

    SWITCH TOGGLE DPDT 6A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A223S1CWZG Bulk 1
    • 1 $27.32
    • 10 $27.32
    • 100 $27.32
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    23S1C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2719

    Abstract: No abstract text available
    Text: 2SD2719 東芝トランジスタ シリコン NPN エピタキシャル形 ダーリントン接続 2SD2719 ○ ソレノイドドライブ用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2719 100ms* 2SD2719

    2SA2058

    Abstract: No abstract text available
    Text: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)


    Original     		PDF 2SA2058 2SA2058

    2SC5703

    Abstract: No abstract text available
    Text: 2SC5703 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5703 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.12 V (最大)


    Original     		PDF 2SC5703 2SC5703

    2SC6061

    Abstract: No abstract text available
    Text: 2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.4±0.1 1 3 2 Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage


    Original     		PDF 2SC6061 2SC6061

    2SA20

    Abstract: 2SA2056
    Text: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)


    Original     		PDF 2SA2056 2SA20 2SA2056

    2SC5784

    Abstract: No abstract text available
    Text: 2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5784 2SC5784

    2SC5784

    Abstract: No abstract text available
    Text: 2SC5784 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5784 ○ 高速スイッチング用 ○ DC-DC コンバータ用 • 単位: mm 直流電流増幅率が高い。 : hFE = 400~1000 IC = 0.15 A • コレクタ･エミッタ間飽和電圧が低い。


    Original     		PDF 2SC5784 2SC5784

    Untitled

    Abstract: No abstract text available
    Text: 2SC6033 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6033 ○ 高速スイッチング用 ○ DC−DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 250~400 IC = 0.3A 直流電流増幅率が高い。


    Original     		PDF 2SC6033

    Untitled

    Abstract: No abstract text available
    Text: 2SC5976 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5976 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: VCE sat = 0.14 V (最大)


    Original     		PDF 2SC5976

    TTA007

    Abstract: 23S1C
    Text: TTA007 東芝トランジスタ シリコンPNPエピタキシャル形 TTA007 単位: mm 高速スイッチング用 DC-DC コンバータ用 • 直流電流増幅率が高い。 : hFE = 200~500 IC = −0.1 A • コレクタ・エミッタ間飽和電圧が低い。


    Original     		PDF TTA007 645mm 645mm2) 645mm2 645mm2 TTA007 23S1C

    TTC007

    Abstract: No abstract text available
    Text: TTC007 東芝トランジスタ シリコンNPNエピタキシャル形 TTC007 単位: mm 高速スイッチング用 DC-DC コンバータ用 • 直流電流増幅率が高い。 : hFE = 400~1000 IC = 0.1 A • コレクタ・エミッタ間飽和電圧が低い。


    Original     		PDF TTC007 645mm 645mm2) 645mm2 645mm2 TTC007

    TTC007

    Abstract: No abstract text available
    Text: TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max)


    Original     		PDF TTC007 to1000 TTC007

    Untitled

    Abstract: No abstract text available
    Text: 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.2 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5755

    2SC5755

    Abstract: No abstract text available
    Text: 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.2 A · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5755 2SC5755

    2SC5755

    Abstract: No abstract text available
    Text: 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.2 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5755 2SC5755

    Untitled

    Abstract: No abstract text available
    Text: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)


    Original     		PDF 2SA2058

    Untitled

    Abstract: No abstract text available
    Text: 2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		PDF 2SC5784

    Untitled

    Abstract: No abstract text available
    Text: 2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2719 ○ Solenoid Drive Applications ○ Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Zener diode included between collector and base


    Original     		PDF 2SD2719

    Untitled

    Abstract: No abstract text available
    Text: TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain : hFE = 200 to 500 IC = −0.1 A • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max)


    Original     		PDF TTA007

    Untitled

    Abstract: No abstract text available
    Text: 2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)


    Original     		PDF 2SA2065

    2SC5906

    Abstract: No abstract text available
    Text: 2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 200 to 500 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)


    Original     		PDF 2SC5906 2SC5906

    2SC5692

    Abstract: 23S1C
    Text: 2SC5692 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。


    Original     		PDF 2SC5692 2SC5692 23S1C

    2SC6033

    Abstract: No abstract text available
    Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm Low collector-emitter saturation: VCE sat = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 6 V DC IC 2.5


    Original     		PDF 2SC6033 2SC6033

    2SA2056

    Abstract: No abstract text available
    Text: 2SA2056 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2056 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。


    Original     		PDF 2SA2056 ms100 2SA2056