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    24 PIN 16MBIT DRAM Search Results

    24 PIN 16MBIT DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    24 PIN 16MBIT DRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: WHITE /M ICRO ELECTRONICS WPD16M36-XMSC 16Mx36 DRAM SIM M FEATURES GENERAL DESCRIPTION • The W P D 16M 36-X M S C is a 16Mbit x 36 Dynamic RAM high density memory module. The W P D 16M 36-X M S C consists of 36 CM O S 16M x 1 bit DRAMs in 24-pin TS O P packages. The


    OCR Scan     		WPD16M36-XMSC 16Mx36 16Mbit 24-pin 72-pin 36-60M 36-70M 70nsm 15b3bTÃ PDF

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024 PDF

    Q67100-Q1279

    Abstract: 39516800 39S16800AT-8 39516800AT-10
    Text: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic


    OCR Scan     		HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil Q67100-Q1279 39516800 39S16800AT-8 39516800AT-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


    OCR Scan     		PD4516421 UPD4516421, UPD4516821, 152-word 576-word 288-word x16-bit 400-mil 44-pin 400-mil, PDF

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
    Text: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010, HY57V168010, HY57V161610 512Kbit HY57V164010- HY57V168010- 1SD10-03-NOV96 285ns hy57v168010a hy57v168010 HY57V164010 400k5 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16400/800CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM fourth generation Preliminary Information • High Performance: Multiple Burst Operation -8 -10 Units fCK(max.) 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command Read with Single Write


    OCR Scan     		HYB39S16400/800CT-8/-10 16MBit PDF

    NEC uPD

    Abstract: NEC AND 1994 AND sdram
    Text: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The uPD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 216-bit 152-word 576-word 288-word x16-bit NEC uPD NEC AND 1994 AND sdram PDF

    39S16802AT-10

    Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		HYB39S1640x/80x/16xAT-8/-10 16MBit 39S16802AT-10 Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T PDF

    NEC uPD 688

    Abstract: CQ-111
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 UPD4516421, UPD4516821, 216-bit 152-word 576-word 288-word x16-bit NEC uPD 688 CQ-111 PDF

    SS35L

    Abstract: smd marking YB Q67100-Q1244 AAFL1
    Text: SIEM EN S 16 MBit Synchronous DRAM Preliminary Information • High Performance: CAS latency = 3 -10 -12 Units fCK 100 83 MHz tCK3 10 12 ns tAC3 8 10 ns • Multiple Burst Operation Read • Autom atic Com mand • Data M ask for Read / W rite control x4, x8


    OCR Scan     		0235bOS SS35L smd marking YB Q67100-Q1244 AAFL1 PDF

    hyb39s16

    Abstract: marking smd wmf CAY smd marking code
    Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge


    Original     		HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 hyb39s16 marking smd wmf CAY smd marking code PDF

    SMD MARKING CODE A12

    Abstract: No abstract text available
    Text: HYB 39S16160CT-5.5/-6/-7 16-MBit Synchronous DRAM 1M x 16-MBit Synchronous DRAM for High-Speed Graphics Applications • High Performance: • Full page optional for sequential wrap around -5.5 -6 -7 Unit fCKMAX @ CL = 3 183 166 143 MHz tCK3 5.5 6 7 ns


    Original     		39S16160CT-5 16-MBit Cycles/64 P-TSOPII-50 GPX05956 SMD MARKING CODE A12 PDF

    HY57V161610FTP

    Abstract: HY57V161610F-Series
    Text: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Feb. 2006 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		16bits 11Preliminary 16Mbit 1Mx16bit) HY57V161610FT HY57V161610F-Series 216-bits HY57V161610FTP PDF

    HY57V161610FTP

    Abstract: No abstract text available
    Text: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Feb. 2006 Preliminary 1.0 Final Revision Apr. 2006 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		16bits 16Mbit 1Mx16bit) HY57V161610FT HY57V161610F-Series 216-bits 400mil HY57V161610FTP PDF

    Untitled

    Abstract: No abstract text available
    Text: Industrial Temperature 16Mbit Enhanced Synchronous DRAM 1Mx16 ESDRAM Preliminary Data Sheet Features Description • • As a JEDEC superset standard, the Enhanced Synchronous DRAM ESDRAM is an evolutionary modification to the JEDEC standard SDRAM. The industrial temperature grade


    Original     		16Mbit 1Mx16 SM2404T-7 50-pin SM2404T-10I 545-DRAM; PDF

    hy57v161610ftp

    Abstract: HY57V161610F-Series HY57V161610-ftp HY57V161610F
    Text: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Feb. 2006 Preliminary 1.0 Final Revision Apr. 2006 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		16bits 16Mbit 1Mx16bit) HY57V161610FT HY57V161610F-Series 216-bits 400mil hy57v161610ftp HY57V161610-ftp HY57V161610F PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
    Text: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 hy57v168010a hy57v168010 HY57V164010 hy57v168010altc hy57v16801 hy57v161610a MDQ13 M1023 OV9653 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		HYB39S16160CT-6/-7 16MBit GPX05956 P-TSOPII-50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		HYB39S16160CT-5 16MBit PDF

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


    OCR Scan     		HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333 PDF

    24 pin 16mbit DRAM

    Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
    Text: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)


    Original     		MSM6791 MSM6791 MSM6688 MSM6788) MSM511000A, MSM511001A) MSM514100A, MSM514101A) 16M-bit 24 pin 16mbit DRAM MSM5116100A MSM6788 sad a4 a5 gnd 05 we331 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6791 DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solidstate recording and playback ICs MSM6688 and MSM6789A . FEATURES • DRAM (x 1-bit configuration) lM-bit DRAM (MSM511000A, MSM511001A): 8 pcs. can be connected.


    OCR Scan     		MSM6791 MSM6791 MSM6688 MSM6789A) MSM511000A, MSM511001A) MSM514100A, MSM514101 16M-bit MSM5116100A) PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    OCR Scan     		HYB39S16400/800/160CT-8/-10 16MBit PDF