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    HYB39S16 Price and Stock

    Infineon Technologies AG HYB39S16320TQ-8

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    Bristol Electronics HYB39S16320TQ-8 372
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    Infineon Technologies AG HYB39S16160CT-8

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    Bristol Electronics HYB39S16160CT-8 300
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    Infineon Technologies AG HYB39S16160C1-8

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    Bristol Electronics HYB39S16160C1-8 121
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    Infineon Technologies AG HYB39S16160CT-10

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    Quest Components HYB39S16160CT-10 1,176
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    Siemens HYB39S16320TQ-5.5

    512K X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 NS, PQFP100
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    Quest Components HYB39S16320TQ-5.5 478
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    Find more HYB39S16 price and stock on Findchips.com

    HYB39S16 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HYB39S16160AT-10 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160AT-8 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160BT-10 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160BT-8 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160CT-10 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160CT-10 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160CT-10 Siemens 16 MBit Synchronous DRAM Scan PDF
    HYB39S16160CT-5.5 Infineon Technologies 183MHz 2B x 512k x 16 SDRAM Original PDF
    HYB39S16160CT-5.5 Infineon Technologies HYB 39S16160CT-5.5,-6,-7 Original PDF
    HYB39S16160CT-6 Infineon Technologies HYB 39S16160CT-5.5,-6,-7 Original PDF
    HYB39S16160CT-6 Siemens 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications Original PDF
    HYB39S16160CT-7 Infineon Technologies HYB 39S16160CT-5.5,-6,-7 Original PDF
    HYB39S16160CT-7 Siemens 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications Original PDF
    HYB39S16160CT-8 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160CT-8 Siemens 16 MBit Synchronous DRAM Original PDF
    HYB39S16160CT-8 Siemens 16 MBit Synchronous DRAM Scan PDF
    HYB 39S16320TQ Infineon Technologies HYB 39S16320TQ Original PDF
    HYB39S16320TQ Infineon Technologies 16M Synchronous Graphics RAM SGRAM Original PDF
    HYB39S16320TQ-10 Siemens Special Mode Registers Two color registers Burst Read with Single Write Operation Original PDF
    HYB39S16320TQ-6 Infineon Technologies 166MHz 16M Synchronous Graphics RAM Original PDF

    HYB39S16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Siemens SCR components Data Manual

    Abstract: HYB39S16320TQ HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 SIEMENS BST t
    Text: Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 Version 2.1.00 Preliminary Information SGRAM 1.1999 HYB39S16320TQ-6/-7/-8 Revision History: Current Version 2.1.00 Previous Version: 1.x.xx Page


    Original     		PDF HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 HYB39S16320TQ-6/-7/-8 HYB39S16320TQ-6 TQFP-100 20x14mm² MS-026 Siemens SCR components Data Manual HYB39S16320TQ HYB39S16320TQ-7 HYB39S16320TQ-8 SIEMENS BST t

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		PDF HYB39S16160CT-6/-7 16MBit GPX05956 P-TSOPII-50

    39S16802AT-10

    Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit 39S16802AT-10 Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T

    active suspension

    Abstract: No abstract text available
    Text: HYB39S1640x/80x/16xAT 16MBit Synchronous DRAM Timing Diagrams 1. Bank Activate Command Cycle 2. Burst Read Operation 3. Read Interrupted by a Read 4. Read to Write Interval 4.1 Read to Write Interval 4.2 Minimum Read to Write Interval 4.3 Non-Minimum Read to Write Interval


    Original     		PDF HYB39S1640x/80x/16xAT 16MBit active suspension

    hyb39s16

    Abstract: marking smd wmf CAY smd marking code
    Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 hyb39s16 marking smd wmf CAY smd marking code

    P-TSOPII-44

    Abstract: CAZ MARKING AZ2 marking
    Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •


    Original     		PDF HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 P-TSOPII-44 CAZ MARKING AZ2 marking

    Siemens SCR components Data Manual

    Abstract: HYB39S163200TQ-8
    Text: Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S163200TQ-7 HYB39S163200TQ-8 HYB39S163200TQ-10 Version 1.1.02 Preliminary Information SGRAM 09.97 HYB39S163200TQ-7/-8/-10 Revision History: Current Version: 09.97 Previous Version: - none Page


    Original     		PDF HYB39S163200TQ-7 HYB39S163200TQ-8 HYB39S163200TQ-10 HYB39S163200TQ-7/-8/-10 HYB39S163200TQ-7 TQFP-100 MS-026 Siemens SCR components Data Manual HYB39S163200TQ-8

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic Command


    Original     		PDF HYB39S16160CT-5 16MBit

    smd marking m11

    Abstract: M6 SMD MARKING CODE
    Text: 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 Units 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns fCK MAX. • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command


    Original     		PDF 39S16400/800/160CT-8/-10 cycles/64 P-TSOPI-44 400mil P-TSOPII-50 PC100 P-TSOPII-50 GPX05956 smd marking m11 M6 SMD MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF TC11IB D-81541

    SAF-TC11IB-64D96E

    Abstract: p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746
    Text: User’s Manual, V2.0, Sep. 2003 TC11IB System Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2003.


    Original     		PDF TC11IB 32-Bit D-81541 v135b AP326111 TC11IB AP3203011_ 2002-07/V1 TC11IBErrataSheetBBV17 SAF-TC11IB-64D96E p3x btr diagrams hitachi ecu Hitachi DSA00319 B.A. private examination 2011 manual 1746

    9633E

    Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
    Text: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS


    Original     		PDF 982e-01 814e-01 677e-01 602e-01 570e-01 640e-01 828e-01 126e-01 528e-01 027e-01 9633E 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E

    lmb 1021

    Abstract: bosch MA 3.1 ecu map wiring 37 pin BOSCH ECU microcontroller bosch ecu 0 261 200 218 connection diagram bosch 0 261 s06 122 nec Microcontroller transistor full 2000 to 2012 TC1130 AC bridg Properties hyundai ECU IC
    Text: U s e r ’ s M a n u a l , V 1 .3 , N o v . 2004 TC1130 32-Bit Single-Chip Microcontroller Volume 1 of 2 : System Units Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2004-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		PDF TC1130 32-Bit lmb 1021 bosch MA 3.1 ecu map wiring 37 pin BOSCH ECU microcontroller bosch ecu 0 261 200 218 connection diagram bosch 0 261 s06 122 nec Microcontroller transistor full 2000 to 2012 TC1130 AC bridg Properties hyundai ECU IC

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7


    OCR Scan     		PDF HYB39S16160CT-6/-7 16MBit

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16400/800/160CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    OCR Scan     		PDF HYB39S16400/800/160CT-8/-10 16MBit

    uras 14 manual

    Abstract: No abstract text available
    Text: SIEMENS Memories for Graphics Systems 16M Synchronous Graphics RAM SGRAM HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 Version 2.1.00 Preliminary Information SGRAM 1.1999 HYB39S16320TQ-6/-7/-8 Revision History: Current Version 2.1.00 Previous Version: 1 .x.xx


    OCR Scan     		PDF HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 HYB39S16320TQ-6/-7/-8 HYB39S16320TQ-61 TQFP-100 20x14mm2, MS-026 uras 14 manual

    smd marking KH

    Abstract: P-TSOPII-44
    Text: HYB39S16400/800CT-8/-10 16MBit Synchronous DRAM S IE M E N S 16 MBit Synchronous DRAM fourth generation Preliminary Information • • • • • • • • High Performance: -8 -10 Units fC K (m ax.) 125 100 MHz tC K 3 8 10 ns tA C 3 6 7 ns tC K 2 10


    OCR Scan     		PDF YB39S16400/800CT-8/-10 16MBit P-TSOPII-44 400mil, 16-to tsop-44 smd marking KH P-TSOPII-44

    Q67100-Q1279

    Abstract: 39516800 39S16800AT-8 39516800AT-10
    Text: SIEMENS HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: • Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Automatic


    OCR Scan     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil Q67100-Q1279 39516800 39S16800AT-8 39516800AT-10

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM SIEMENS 16 M Bit S yn c h ro n o u s DRAM A dvan ced In form atio n • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge


    OCR Scan     		PDF HYB39S16400/800/160BT-8/-10 16MBit

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16400/800CT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM fourth generation Preliminary Information • High Performance: Multiple Burst Operation -8 -10 Units fCK(max.) 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command Read with Single Write


    OCR Scan     		PDF HYB39S16400/800CT-8/-10 16MBit

    Untitled

    Abstract: No abstract text available
    Text: HYB39S16160CT-5.5/-6/-7 16MBit Synchronous DRAM isfm aon 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: full page optional around for sequencial wrap -5.5 -6 -7 Units fC K m a x @ C L = 3 183 166 143 M Hz tC K 3 5.5


    OCR Scan     		PDF HYB39S16160CT-5 16MBit

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


    OCR Scan     		PDF P-SOJ-26/20-5

    thv8

    Abstract: HYB39S16800T 16m x 4 hyb
    Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15


    OCR Scan     		PDF L-SIM-72-12 324020S/GS 324025S/GS L-SIM-72-15 328020S/GS 328025S/GS 364020S/GS L-SIM-72-13 364035S/GS thv8 HYB39S16800T 16m x 4 hyb

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications ATM Buffer Manager ABM PXB 4330 E Version 1.1 Preliminary Data Sheet 08.98 DS 2 PXB 4330 E Revision History: Current Version: 08.98 P revious Version: P relim inary Data S heet 05.98 DS1 Page in previous V ersion Page (in current


    OCR Scan     		PDF