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    24AUG09 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 2 FO-55110-B HONEYWELL PART NUMBER REV DOCUMENT D 0055940 CHANGED BY SJK CHECK 24AUG09 CMH 8PA81-TL PRODUCT CODE: SGL6275 B B CENTER POSITIVE, T1 3/4, MIDGET FLANGE LED COLOR:RED NOTES: 1 - THIS PACKET CONSISTS OF A REPLACEMENT LED TO BE USED WITH 4TL836-3D


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    FO-55110-B 24AUG09 8PA81-TL SGL6275 4TL836-3D 19JUN09 5M-1994 07FEB07 PDF

    Untitled

    Abstract: No abstract text available
    Text: WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead Pb -Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement


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    WTC2302 OT-23 OT-23 24-Aug-09 PDF

    SIR164DP

    Abstract: A7282 65060 spice model 740
    Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR164DP 18-Jul-08 A7282 65060 spice model 740 PDF

    SI4823DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4823DY 18-Jul-08 PDF

    si4154

    Abstract: SI415
    Text: SPICE Device Model Si4154DY Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si4154DY 18-Jul-08 si4154 SI415 PDF

    Untitled

    Abstract: No abstract text available
    Text: 464 MHz SAW Filter 5.68 MHz Bandwidth Part Number: SF0464BA02647S DESCRIPTION • • • Miniature 464 MHz SAW Filter with 5.68 MHz bandwidth. 5 x 7 mm LCC package. RoHS compliant TYPICAL PERFORMANCE . . 1 . 2 . 3 - . 4 - B d t t A . 5 . 6 . 7 . 8 . 4


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    SF0464BA02647S DSSF0464BA02647S 24-AUG-09 Par2647S PDF

    65075

    Abstract: No abstract text available
    Text: SPICE Device Model SiE882DF Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiE882DF 18-Jul-08 65075 PDF

    Si7145DP

    Abstract: si7145 EFB810-3/4-3/Si7145DP
    Text: SPICE Device Model Si7145DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si7145DP 18-Jul-08 si7145 EFB810-3/4-3/Si7145DP PDF

    D 1556

    Abstract: SiR416DP
    Text: SPICE Device Model SiR416DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR416DP 18-Jul-08 D 1556 PDF

    transistor aaa

    Abstract: No abstract text available
    Text: Device Orientation Vishay Siliconix Device Orientation for PowerPAIRTM DEVICE ORIENTATION PACKAGE METHOD PowerPAIR 6 x 3.7 T1 PowerPAIR 6 x 5 T1 AAA BBB CC AAA BBB CC AAA BBB CC AAA BBB CC AAA BBB CC User direction of feed * Letters are to show orientation only. Number of characters may vary.


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    Specification-PACK-0007-23 C09-0415, 24-Aug-09 transistor aaa PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiS438DN 18-Jul-08 PDF

    SUD35N10-26P-GE3

    Abstract: SUD35N10-26PGE3
    Text: SPICE Device Model SUD35N10-26P-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SUD35N10-26P-GE3 18-Jul-08 SUD35N10-26P-GE3 SUD35N10-26PGE3 PDF

    Si5471DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


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    Si5471DC 18-Jul-08 PDF

    d 1554

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ400DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiJ400DP 18-Jul-08 d 1554 PDF

    65070

    Abstract: No abstract text available
    Text: SPICE Device Model SiR406DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SiR406DP 18-Jul-08 65070 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC R EVISIO N S DIST E P B DESCRIPTION DATE DWN 08DEC04 24AUG09 EBDO—0 4 6 3 —04 F F 1 REVISED PER ECO —09 —0 2 0 6 8 9 NOTES: A LTR APVD RS MG KK AEG FOR S T R IP V E R S IO N S E E DWG. 1 6 4 1 5 3 . U N D E R C O A T IN G : 1 , 3 /Am Ni.


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    08DEC04 24AUG09 164169PARTNUMBER 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DO NOT M ETRIC SCA LE DIMENSIONS IN m m PRO JEC TIO N R EVISIO N S 3 1 ,5 P LTR G1 D E S C R IP T I O N DATE REVISED PER E C O -0 9 -0 2 0 6 8 9 S P R I N G :STAI N L E S S S T E E L 24AUG09 DWN APVD KK AEG 2 7 ,5 -o- -o- E1 ,6 THIRD ANGLE E D IA . STRIP LOOSE-PIECE


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    24AUG09 PDF

    114-57018

    Abstract: 1775442-1 ECR-09-01
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2009 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By TYCO ELECTRONICS CORPORATION. REVISIONS DW A1 JL WK 24AUG09 REVISED ECR— 0 9 — 0 1 8 8 6 6 5.0 0 .1 5 LO CN O -H in 00 Ô il o oo cn CN o -H y o ¡ oo ud


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    24AUG09 X-1775441-X. 31MAR2000 114-57018 1775442-1 ECR-09-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST REVISIONS H LTR G1 D G2 DESCRIPTION DATE EC R - 08- 014314 DWN APVD 23-09-08 AEG WRV 24AUG09 KK AEG REVISED PER E C 0 - 0 9 - 0 2 0 6 8 9


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    24AUG09 24APR78 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 3 DRAWING MADE IN THIRD ANG LE PR O JEC TIO N T H IS D R A W IN G IS U N P U B L I S H E D . C CO PYR IG HT 19 R E L E A S E D FOR P UB LIC ATIO N BY AMP IN C O R P O R A T E D . A L L IN T E R N A T IO N A L 2 D IS T LOC ,1 9 50 Ah R IG H TS R E S E R V E D .


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    ECO-09-020774 24AUG09 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR P U B L IC A T IO N ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S R IG H T S RESERVED. C O R P O R A T IO N . D .027 ~ T~ .3 20 C C REF "A” S P A C E S @ . 100 + .0 0 3 £ 100 _ <><> “


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    CO87331-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 7 THIS DRAWING IS UNPUBLISHED. I U / COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 0 0 REVISIONS P LTR E2 E3 DESCRIPTION DATE DWN APVD REVISED PER E C O - 07- 000244 1 /1 7 /0 7 ss NE REVISED PER E C 0 - 0 9 - 0 2 0 9 3 5


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    24AUG09 31MAR2000 30MAR99 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. R E VIS IO N S LTR THE NOTED DIMENSIONS APPLY AT THE INTERSECTION OF THE POST AND HOUSING DATE DWN APVD I6AU G 05


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    31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. £ D THE NOTED DIMENSION APPLIES AT THE INTERSECTION OF THE POST AND HOUSING POINT OF MEASUREMENT FOR PLATING THICKNESS. POSTS: .000030 GOLD IN CONTACT AREA .0 0 0 1 0 0 - , 0 0 0 2 0 0 MATTE


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    27DEC2007 ECO-09-021826 24AUG09 T103167-0 31MAR2000 PDF