78015
Abstract: AMP PBT connector 109-52
Text: Product Specification 製品規格 108-78547 24DEC2008 Rev. A 0.64Ⅲ/2.3TW CONNECTOR 1. 適用範囲 1. Scope 1.1 内容 本規格は0.64/2.3 コネクタの製品性能、試験方法、品 質保証の必要条件を規定している。 適用製品名と型番は Fig.11 の通りである。
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24DEC2008
20Position
78015
AMP PBT connector
109-52
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 RELEASED FOR PUBLICATION - LOC - ALL RIGHTS RESERVED. - 1 REVISIONS DIST 00 P E REVISED PER ECR-13-019886 - WEAR PLATE DATE PER ECR-12-003178 F D DESCRIPTION LTR 0.05 72.00 0.20 B 24DEC2013 FL FY - - - - 7
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27-Oct-10
26-Oct-10
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BTS 132 SMD
Abstract: No abstract text available
Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package
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PD57002-E
PowerSO-10
BTS 132 SMD
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TPA6204A1
Abstract: TPA6204A1DRB TPA6204A1DRBG4 TPA6204A1DRBR TPA6204A1DRBRG4 TPA6211A1 TPA2005D1
Text: TPA6204A1 www.ti.com SLOS429B − MAY 2004 − REVISED SEPTEMBER 2009 1.7-W MONO FULLY DIFFERENTIAL AUDIO POWER AMPLIFIER FEATURES D Designed for Wireless or Cellular Handsets APPLICATIONS D Ideal for Wireless Handsets D PDAs D Notebook Computers and PDAs
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TPA6204A1
SLOS429B
TPA2005D1
TPA6211
TPA6204A1
TPA6204A1DRB
TPA6204A1DRBG4
TPA6204A1DRBR
TPA6204A1DRBRG4
TPA6211A1
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Untitled
Abstract: No abstract text available
Text: TLV271, TLV272, TLV274 FAMILY OF 550ƵA/Ch 3ĆMHz RAILĆTOĆRAIL OUTPUT OPERATIONAL AMPLIFIERS SLOS351D − MARCH 2001 − REVISED FEBRUARY 2004 D D D D D D D D D D Rail-To-Rail Output Wide Bandwidth . . . 3 MHz High Slew Rate . . . 2 .4 V/µs Supply Voltage Range . . . 2.7 V to 16 V
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TLV271,
TLV272,
TLV274
SLOS351D
OT-23
TLV271)
TLV272)
TLC27x
TLV27x
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SN54ACT08
Abstract: SN74ACT08 SN74ACT08D SN74ACT08DBR SN74ACT08DR SN74ACT08N SN74ACT08NSR SN74ACT08PW SN74ACT08PWR act08
Text: SN54ACT08, SN74ACT08 QUADRUPLE 2ĆINPUT POSITIVEĆAND GATES SCAS535C − SEPTEMBER 1995 − REVISED OCTOBER 2003 D 4.5-V to 5.5-V VCC Operation D Inputs Accept Voltages to 5.5 V D Max tpd of 10 ns at 5 V D Inputs Are TTL-Voltage Compatible SN54ACT08 . . . FK PACKAGE
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SN54ACT08,
SN74ACT08
SCAS535C
SN54ACT08
SN54ACT08
SN74ACT08
SN74ACT08D
SN74ACT08DBR
SN74ACT08DR
SN74ACT08N
SN74ACT08NSR
SN74ACT08PW
SN74ACT08PWR
act08
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sgx530* vector graphics manual
Abstract: universal shift register using cpld
Text: TMS320C6A8168 TMS320C6A8167 SPRS680B – OCTOBER 2010 – REVISED AUGUST 2011 www.ti.com TMS320C6A816x C6-Integra DSP+ARM Processors Check for Samples: TMS320C6A8168, TMS320C6A8167 1 Device Summary 1.1 Features 1234567891011 • High-Performance C6-Integra DSP+ARM
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TMS320C6A8168
TMS320C6A8167
SPRS680B
TMS320C6A816x
TMS320C6A8168,
16-bit
C674x
32K-Byte
256K-Byte
sgx530* vector graphics manual
universal shift register using cpld
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ADS1243-HT
Abstract: No abstract text available
Text: ADS1243-HT SBAS525 – DECEMBER 2011 www.ti.com 24-BIT ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS1243-HT FEATURES 1 • • 2 • • • • • • • • • • • 24-Bits No Missing Codes Simultaneous 50-Hz and 60-Hz Rejection –90 dB Minimum
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ADS1243-HT
SBAS525
24-BIT
24-Bits
50-Hz
60-Hz
C/210
ADS1243-HT
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Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
SiRA02DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC
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SiRA14DP
SiRA14DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4636DY
Abstract: Si4636DY-T1-E3
Text: New Product Si4636DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0085 at VGS = 10 V 17 0.0105 at VGS = 4.5 V 15.6 Qg (Typ)
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Si4636DY
Si4636DY-T1-E3
08-Apr-05
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SUD50N10-18P-E3
Abstract: SUD50N10-18P
Text: New Product SUU/SUD50N10-18P Vishay Siliconix N-Channel 100-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.0185 at VGS = 10 V 50 48 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS
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SUU/SUD50N10-18P
O-251
SUD50N10-18P-E3
SUU50N10-18P-E3
08-Apr-05
SUD50N10-18P-E3
SUD50N10-18P
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si4778
Abstract: Si4778DY Si4778DY-T1-E3 64bc30
Text: New Product Si4778DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 rDS(on) (Ω) ID (A) 0.023 at VGS = 10 V 8a 0.028 at VGS = 4.5 V a 8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 5.5 nC APPLICATIONS
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Si4778DY
Si4778DY-T1-E3
08-Apr-05
si4778
64bc30
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Untitled
Abstract: No abstract text available
Text: WT-B1911Y Top Mount Chip LED Product Specifications Specification Iv Material Quantity 2.85-18.0mcd O @20mA/ Ta= 25 ;Tolerance: + 10% Wavelength 584.5-594.5 nm O @20mA/ Ta= 25 C;Tolerance: + 0.5nm Vf 1.6-2.4V O @20mA/ Ta= 25 C ;Tolerance: + 0.05V Ir < 100 µA @ VR = 5 V
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WT-B1911Y
81-1A
220x240mm
4000pcs
30sec.
24-Dec-2013
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S7267
Abstract: SIE854DF
Text: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE854DF
08-Apr-05
S7267
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SIHW30N60E-GE3
Abstract: No abstract text available
Text: SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS
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SiHW30N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SIHW30N60E-GE3
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Untitled
Abstract: No abstract text available
Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS
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SiHP30N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0155 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • Package with Low Thermal Resistance
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SQD50P06-15L
AEC-Q101
O-252
O-252
SQD50P06-15L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQD50P04-09L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0190
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SQD50P04-09L
2002/95/EC
AEC-Q101
O-252
O-252
SQD50P04-09L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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A8483
Abstract: No abstract text available
Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile
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Si8483DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
A8483
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Untitled
Abstract: No abstract text available
Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS
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SiHG30N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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SQD25N15-52
AEC-Q101
O-252
O-252
SQD25N15-52-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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4810 mosfet
Abstract: No abstract text available
Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses
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SiHG47N60E
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
4810 mosfet
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING c IS UNPUBLISHED. R E LE AS ED FOR PUBLICATION rar , 1998 PTTT REV I 5 1 ONS BY AMP INCORPORATED.ALL RIGHTS RE 5 E R V E D . COPY RI GH T 1998 LTR -Y- •0. 1 -0. 05 5-0 1 .4 * 0.1 X Y ECN DESCRIPTION R ELEA S ED R EVISED DWN DATE F J0 0 -2 3 1 5-98 24DEC'98 N. 5
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24DEC
24/DEC/
24/DEC/
UKILE55
P1470-19
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