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Infineon Technologies AG IGW25N120H3FKSA1 IGBT TRENCH FS 1200V 50A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IGW25N120H3FKSA1	Tube	1,445		1	1 $5.94 10 $5.94 100 $3.36867 1000 $2.38641 10000 $2.3085	Buy Now
Mouser Electronics	IGW25N120H3FKSA1		2,047			1 $5.62 10 $5.62 100 $2.79 1000 $2.3 10000 $2.3	Buy Now
Newark	IGW25N120H3FKSA1	Bulk			1	1 $5.32 10 $4.63 100 $2.87 1000 $2.62 10000 $2.62	Buy Now
TME	IGW25N120H3FKSA1		76		1	1 $4.46 10 $3.82 100 $3.48 1000 $2.88 10000 $2.88	Buy Now
Chip One Stop	IGW25N120H3FKSA1	Tube	240	0 Weeks, 1 Days	1	1 $4.58 10 $3.84 100 $2.54 1000 $2.52 10000 $2.52	Buy Now

EBV Elektronik	IGW25N120H3FKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	IGW25N120H3FKSA1		955			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micro Commercial Components MIW25N120FA-BP IGBT TRENCH FS 1200V 50A TO247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MIW25N120FA-BP	Tube	1,163		1	1 $6.23 10 $4.181 100 $6.23 1000 $2.52492 10000 $2.45825	Buy Now
Mouser Electronics	MIW25N120FA-BP		1,027			1 $4.55 10 $3.58 100 $2.75 1000 $2.49 10000 $2.48	Buy Now
Micro Commercial Components SICW025N120H-BP SIC MOSFET,TO-247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SICW025N120H-BP	Tube	360		1	1 $17.04 10 $13.365 100 $13.365 1000 $17.04 10000 $17.04	Buy Now
Mouser Electronics	SICW025N120H-BP		360			1 $15.61 10 $13.76 100 $11.9 1000 $11.88 10000 $11.88	Buy Now
Newark	SICW025N120H-BP	Bulk			1	1 $19.29 10 $14.14 100 $12.34 1000 $11.14 10000 $11.14	Buy Now
New Advantage Corporation	SICW025N120H-BP		300		1	1 - 10 - 100 $14.36 1000 $13.4 10000 $13.4	Buy Now
Micro Commercial Components SICW025N120H4-BP SIC MOSFET,TO-247-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SICW025N120H4-BP	Bulk	350		1	1 $17.15 10 $13.478 100 $13.478 1000 $17.15 10000 $17.15	Buy Now
Mouser Electronics	SICW025N120H4-BP		360			1 $15.74 10 $13.87 100 $11.99 1000 $11.97 10000 $11.97	Buy Now
Newark	SICW025N120H4-BP	Bulk			1	1 $19.42 10 $14.24 100 $12.43 1000 $11.23 10000 $11.23	Buy Now
Infineon Technologies AG IKW25N120CS7XKSA1 IGBT TRENCH FS 1200V 55A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW25N120CS7XKSA1	Tube	341		1	1 $7.16 10 $7.16 100 $4.11667 1000 $2.95892 10000 $2.95663	Buy Now
Mouser Electronics	IKW25N120CS7XKSA1		299			1 $6.45 10 $5.98 100 $3.45 1000 $2.95 10000 $2.95	Buy Now
Newark	IKW25N120CS7XKSA1	Bulk	60		1	1 $5.94 10 $5.92 100 $2.87 1000 $2.65 10000 $2.65	Buy Now
Rochester Electronics	IKW25N120CS7XKSA1		240		1	1 $3.29 10 $3.29 100 $3.09 1000 $2.8 10000 $2.8	Buy Now
TME	IKW25N120CS7XKSA1				1	1 $5.75 10 $4.92 100 $4.19 1000 $4.1 10000 $4.1	Get Quote

Chip One Stop	IKW25N120CS7XKSA1	Tube	210	0 Weeks, 1 Days	1	1 $6.28 10 $6.25 100 $3.39 1000 $3.37 10000 $3.06	Buy Now
EBV Elektronik	IKW25N120CS7XKSA1			13 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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25N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
25N120		IXYS	Low Vce(sat) High Speed IGBT		Original	PDF

25N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
25N120 Abstract: 25N120 ixys Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C	Original	25N120 25N120D1 O-247 25N120 25N120 ixys	PDF
c2555 Abstract: IC IGBT 25N120 25N120 Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C	OCR Scan	25N120 25N120A 25N120A c2555 IC IGBT 25N120	PDF
tt 2146 m Abstract: No abstract text available Text: DIXYS IXSH 25N120A IGBT IC25 V CES r Short Circuit SOA Capability Symbol Test C onditions V CES Tj Tj v CQR V 0 ES vQEM CE sat Maximum Ratings = 25°C to 150°C = 25°C to 150°C; RGE= 1 MO Continuous Transient ' cm Tc = 25°C Tc =90°C Tc = 25°C, 1 ms SSOA	OCR Scan	25N120A O-247 tt 2146 m	PDF
IC IGBT 25N120 Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12 Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C	Original	25N120 25N120D1 O-247 IC IGBT 25N120 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12	PDF
25N120AU1 Abstract: No abstract text available Text: IGBT with Diode IXSH 25N120AU1 VC ES V C E sat SCSOA Capability Sym bol Te st C on d ition s V CES Tj = 25°C to 150°C 1200 V vCGR T, = 2 5 °C to 150°C; R se = 1 M£2 1200 V v vGEM Continuous T ransient ±20 ±30 V V Maximum Ratings 50 25 80 A A A = 50	OCR Scan	25N120AU1 O-247 -100/ps: 25N120AU1	PDF
25N120AU1 Abstract: No abstract text available Text: n ix Y S IGBT with Diode IXSH 25N120AU1 •C25 V CES SCSOA Capability CE sat Symbol Test Conditions VcHS T j = 25°C to 150°C 1200 V VC0R T j = 25°C to 150°C; RGE= 1 M il 1200 V v v GEM Continuous Transient U25 ' cm T c = 25°C T c = 90°C T 0 = 25°C, 1 ms	OCR Scan	25N120AU1 O-247AD IXSH25N120AU1 25N120AU1	PDF
25N120 Abstract: IC IGBT 25N120 25n120 IGBT D-68623 Text: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	25N120 25N120D1 O-247 25N120 IC IGBT 25N120 25n120 IGBT D-68623	PDF
IC IGBT 25N120 Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C	Original	25N120 25N120D1 O-247 IC IGBT 25N120 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E	PDF
100N120 Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352 Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50	Original	15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352	PDF
kgt25n120kda Abstract: 25N120KDA kgt25n120 IGBT 2000 25N120 Text: SEMICONDUCTOR 25N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.	Original	KGT25N120KDA kgt25n120kda 25N120KDA kgt25n120 IGBT 2000 25N120	PDF
10n120 Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120 Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp	Original	MHPM6B10N120/D MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 10n120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120	PDF
25N120 Abstract: No abstract text available Text: IGBT 25N120A IC25 = 50 A VCES = 1200 V VCE sat = 4.0 V Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	IXSH25N120A O-247AD 25N120	PDF
25N120 Abstract: IC IGBT 25N120 ixgh25n120 .25N120 Text: 25N120 25N120A L O W V CE sa« High speed IGBT V " ces C25 VCE(sat) 1200 V 1200 V 50 A 50 A 3V 4V Q_ $ Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V v CGR Tj = 25°C to 150°C; ReE = 1 MU 1200 V v GES Continuous ±20 V v GEM T ransient	OCR Scan	IXGH25N120 IXGH25N120A O-247 25N120A 25N120A 25N120 IC IGBT 25N120 .25N120	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1	PDF

25N120 Abstract: 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A Text: Low VCE sat High speed IGBT IXGH 25 N120 IXGH 25 N120A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C	Original	N120A O-247 25N120 25N120A 25N120 25N120A IC IGBT 25N120 .25n120 25N120 ixys .25N12 MOS-Gated Transistors N120 92783D N120A	PDF
Untitled Abstract: No abstract text available Text: □IXYS Preliminary D ata S heet 25N120A IGBT ^C25 VCES Improved SCSOA Capability Symbol V CE sat Test Conditions Maximum Ratings TO-247AD v CES Ta = 25°C to 150°C 1200 V v CGR Tj 1200 V = 25°C to 150°C; RGE= 1 MCI v GES Continuous ±20 V v GEM Transient	OCR Scan	IXSH25N120A O-247AD G00375S	PDF
Untitled Abstract: No abstract text available Text: 25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120IHLWG NGTB25N120IHLW/D	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
SMD diode b24 Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64	OCR Scan	12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF
25N120L Abstract: NGTB25N Text: 25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is	Original	NGTB25N120LWG NGTB25N120L/D 25N120L NGTB25N	PDF
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF

25N120 Search Results

25N120 Price and Stock

Infineon Technologies AG IGW25N120H3FKSA1

Micro Commercial Components MIW25N120FA-BP

Micro Commercial Components SICW025N120H-BP

Micro Commercial Components SICW025N120H4-BP

Infineon Technologies AG IKW25N120CS7XKSA1

25N120 Datasheets (1)

25N120 Datasheets Context Search

25N120

c2555

tt 2146 m

IC IGBT 25N120

25N120AU1

25N120AU1

25N120

IC IGBT 25N120

100N120

kgt25n120kda

10n120

25N120

25N120

B1116

25N120

Untitled

Untitled

40n80

SMD diode b24

ixgh 1500

25N120L

120n60b

200n60

7n60b