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    260P Search Results

    260P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74ALVCH162260PV8 Renesas Electronics Corporation MULTIPLEXED D TYPE LATC Visit Renesas Electronics Corporation
    74ALVCHR16260PF8 Renesas Electronics Corporation BIDIRECTIONAL TRIPORT BUS Visit Renesas Electronics Corporation
    74ALVCHR16260PV Renesas Electronics Corporation BIDIRECTIONAL TRIPORT BUS Visit Renesas Electronics Corporation
    74ALVCH16260PAG8 Renesas Electronics Corporation 3.3V CMOS 12-Bit to 24-Bit Multiplexed D-Type Latch with 3-State Outputs, Bus-Hold Visit Renesas Electronics Corporation
    74ALVC16260PF8 Renesas Electronics Corporation 12 BIT 24 BIT MULTI. D Visit Renesas Electronics Corporation
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    260P Price and Stock

    Taiwan Semiconductor TSM260P02CX6-RFG

    MOSFET P-CHANNEL 20V 6.5A SOT26
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSM260P02CX6-RFG Reel 18,000 3,000
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    • 10000 $0.19633
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    Taiwan Semiconductor TSM260P02CX-RFG

    -20V, -6.5A, SINGLE P-CHANNEL PO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSM260P02CX-RFG Reel 12,000 3,000
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    • 10000 $0.17423
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    TT electronics / BI Technologies P260P-D1BS3CB100K

    POT 100K OHM 1/2W PLASTIC LINEAR
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    DigiKey P260P-D1BS3CB100K Tray 906 1
    • 1 $13.64
    • 10 $10.941
    • 100 $8.94025
    • 1000 $7.55691
    • 10000 $6.88346
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    ITT Interconnect Solutions QLC260P

    CONN PLUG 260POS
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    DigiKey QLC260P Tray 687 1
    • 1 $130.42
    • 10 $106.335
    • 100 $97.3375
    • 1000 $97.3375
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    Mouser Electronics QLC260P 22
    • 1 $104.03
    • 10 $94.04
    • 100 $93.59
    • 1000 $93.59
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    Interstate Connecting Components QLC260P 210
    • 1 $106.92
    • 10 $90.8088
    • 100 $84.9877
    • 1000 $84.9877
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    Avnet Abacus QLC260P 13 Weeks 40
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    onsemi NTLUD3A260PZTAG

    MOSFET 2P-CH 20V 1.3A 6UDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTLUD3A260PZTAG Digi-Reel 94 1
    • 1 $0.81
    • 10 $0.501
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    NTLUD3A260PZTAG Cut Tape 94 1
    • 1 $0.81
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    Bristol Electronics NTLUD3A260PZTAG 417
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    Richardson RFPD NTLUD3A260PZTAG 1
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    Find more 260P price and stock on Findchips.com

    260P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET http://onsemi.com 600V, 3.5A, 3.25Ω, TO-220F-3FS Features • • • ON-reistance RDS on =2.5Ω(typ.) Input capacitance Ciss=260pF(typ.) 10V drive TO-220F-3FS Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1368B 2SK4197FS O-220F-3FS 260pF A1368-5/5

    HEL07

    Abstract: E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR XEL07
    Text: Micrel, Inc. SY10EL07 SY100EL07 SY10EL07 2-INPUT XOR/XNOR FEATURES SY100EL07 DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107


    Original     		PDF SY10EL07 SY100EL07 260ps SY10/100EL07 M9999-031006 HEL07 E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR XEL07

    23N50

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN

    MICREL marking

    Abstract: XEL07
    Text: SY10EL07 SY100EL07 FINAL 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107


    Original     		PDF SY10EL07 SY100EL07 260ps SY10/100EL07 MICREL marking XEL07

    E107

    Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR EL07
    Text: 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With


    Original     		PDF SY10EL07 SY100EL07 260ps SY10/100EL07 SY10EL07ZCTR SY100EL07ZC SY100EL07ZCTR E107 SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR EL07

    018U

    Abstract: SY58016L SY58017U SY58018U SY58018UMI SY58018UMITR SY58019U SY58025U
    Text: 5Gbps DIFFERENTIAL LVPECL 2:1 MUX WITH INTERNAL TERMINATION Micrel Precision Edge SY58018U Precision Edge™ SY58018U FEATURES • Guaranteed AC performance over temperature and voltage: • > 5Gbps data throughput • > 4GHz fMAX clock • < 260ps propagation delay


    Original     		PDF SY58018U 260ps 110ps 800mV 16-pin 018U SY58016L SY58017U SY58018U SY58018UMI SY58018UMITR SY58019U SY58025U

    AZ100EL07

    Abstract: AZ100EL07D AZ10EL07 AZ10EL07D E107 MC100EL07 MC10EL07
    Text: DATA SHEET AZ10EL07 AZ100EL07 ARIZONA MICROTEK, INC. 2-Input XOR/XNOR FEATURES • • • • • 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


    Original     		PDF AZ10EL07 AZ100EL07 260ps MC10EL07 MC100EL07 AZ10EL/100EL07 AZ100EL07 AZ100EL07D AZ10EL07 AZ10EL07D E107 MC100EL07 MC10EL07

    E107

    Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR
    Text: SY10EL07 SY100EL07 FINAL 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107


    Original     		PDF SY10EL07 SY100EL07 260ps SY10/100EL07 SY10EL07ZCTR SY100EL07ZC SY100EL07ZCTR E107 SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR

    LP 3405

    Abstract: AZ100EL07 AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
    Text: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


    Original     		PDF AZ10EL07 AZ100EL07 260ps MC10EL07 MC100EL07 AZ10EL07D AZ100EL07D AZ10EL07T AZ100EL07T AZM10EL07 LP 3405 AZ100EL07 AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07

    AZ100EL07

    Abstract: AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
    Text: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


    Original     		PDF AZ10EL07 AZ100EL07 260ps MC10EL07 MC100EL07 AZ10EL07D AZ100EL07D AZ10EL07T AZ100EL07T AZM10EL07 AZ100EL07 AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07

    LP66N

    Abstract: No abstract text available
    Text: electronics, inc. POLYCARBONATE FILM CAPACITORS Metalized Polycarbonate Film Capacitors Typical Characteristics ………………D3 Type 259P …………………………………………………………………D4 Type 260P …………………………………………………………………D6


    Original     		PDF

    8140 SOURIAU

    Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
    Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 8140 SOURIAU BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115

    Untitled

    Abstract: No abstract text available
    Text: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates.


    OCR Scan     		PDF SY10EL07 SY100EL07 260ps 00EL07 T02ir

    ACT5260

    Abstract: ACT5260PC-P10-POD R4400 R4400PC R4700 R5000 E3199
    Text: A i r h i 260P c -F*10*•P G D ‘2 l-K % Aj •3iDte iJL 1 L_r [_ □ J The Aeroflex 260PC-P10-POD adapts a QED RM5260 MIPS microprocessor to an R4400PC, R4600 or R4700 processor’s 179 pin PGA footprint. This product allows the evaluation of the latest MIPS IV 5XXX series performance in existing 4XXX series hardware.


    OCR Scan     		PDF ACT5260PC-P10-POD RM5260 R4400PC, R4600 R4700 MlL-STD-883 004715b ACTS260PC ACT5260 R4400 R4400PC R5000 E3199

    Untitled

    Abstract: No abstract text available
    Text: Typen Types 260P, 260W, 260X 260P, 260W, 260X Prazisions-Trimmpotentiometer / Cermet Precision Trimming Potentiometers / Cermet Technische Daten Specifications Nennbelastbarkeit P70 Power rating P70 0,25 W Max. zulassige Betriebsspannung Max. cont. work, voltage


    OCR Scan     		PDF MIL-R-22097, MIL-R-22097.

    TC170G35

    Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
    Text: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


    OCR Scan     		PDF TC170G 5VTC170G 260ps TC160G TC170G35 TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16

    Dearborn 260P

    Abstract: Dearborn Wire catalog
    Text: DEARBORN METAL CASE METALIZED FILM CAPACITORS Type 260P Hermetically-Sealed M etal-Case Polycarbonate Film Capacitors Features * * * * * High S tability Small Size Low Power Dissipation Low D ielectric Absorption W ire leads or tab term inals 9922 Electrical Specifications


    OCR Scan     		PDF 260P474X9600S02 260P564X9600S02 260P684X9600S02 260P824X9600S02 260P105X9600S02 Dearborn 260P Dearborn Wire catalog

    TC170G35

    Abstract: No abstract text available
    Text: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


    OCR Scan     		PDF TC170G 260ps TC160G T0T7247 IS09000. TC170G35

    Untitled

    Abstract: No abstract text available
    Text: «0» SYNERGY PRELIMINARY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay The SY10EL/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With


    OCR Scan     		PDF SY10EL07 SY100EL07 260ps SY10EL/100EL07 100EL R0G13fll

    Untitled

    Abstract: No abstract text available
    Text: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates.


    OCR Scan     		PDF SY10EL07 SY100EL07 260ps 00EL07 T02ir

    Untitled

    Abstract: No abstract text available
    Text: «ö> SYNERGY SY10EL07 2-in p u t x o r / x n o r s y io o e l o ? SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75K£2 input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package


    OCR Scan     		PDF SY10EL07 260ps 10/100E T02ir

    Untitled

    Abstract: No abstract text available
    Text: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR S E M IC O N D U C T O R FEATURES DESCRIPTION • 260ps propagation delay T he S Y 1 0/1 0 0 E L 0 7 are 2 -in p u t X O R /X N O R gates. T hese devices are fu n ction a lly eq u iva le nt to the E107 d e vice s, w ith h ig h e r p e rfo rm a n ce ca p a b ilitie s .


    OCR Scan     		PDF SY10EL07 SY100EL07 260ps Typ14 100EL 100EL Typ280

    Untitled

    Abstract: No abstract text available
    Text: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES • 260ps propagation delay The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With


    OCR Scan     		PDF SY10EL07 SY100EL07 260ps SY10/100EL07 100EL