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    Microchip Technology Inc TC427IJA

    IC GATE DRVR LOW-SIDE 8CERDIP
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    Maxim Integrated Products TSC427IJA

    IC GATE DRVR
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    Microchip Technology Inc PIC16F527-I-JP

    IC MCU 8BIT 1.5KB FLASH 20UQFN
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    Microchip Technology Inc PIC16F527-I/JP

    MCU 8-Bit PIC16 PIC RISC 1.5KB Flash 5V 20-Pin UQFN EP Tube - Rail/Tube (Alt: PIC16F527-I/JP)
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    Microchip Technology Inc PIC16F527T-I/JP

    8-bit Microcontrollers - MCU 8Bit MCU 1.5KB Flash 64B Fl Data 8bit ADC
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    27IJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ic laf 0001

    Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
    Text: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses


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    IRGTI200F06 10KHz 50KHz applicationI200F06 100nH C-236 ic laf 0001 LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL PDF

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


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    BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944 PDF

    2N1026

    Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 2N1026 2N1025 2N2708 PDF

    2N3134

    Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


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    2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A PDF

    NPN transistor 2n2222A plastic package to116

    Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package


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    SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467 PDF

    P-CHANNEL POWER MOSFET

    Abstract: 27iJ
    Text: SFS9640 Advanced Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA Max. @ VDS = -200V


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    -200V SFS9640 P-CHANNEL POWER MOSFET 27iJ PDF

    ma 5558

    Abstract: MOLEX 5558 T
    Text: 2 * 00 NOTES oO * * CO lo * Li~> LD Q 0.2 0008 (CUT OFF TAB LENGTH) ( 1=9) -„075 00 L 2„ 3„ 4„ A AP PL I C A B L E HOUSING ° 5559 S E R I E S MATES WITH TERMINAL ; 5556 S E R I E S (METRIC) VALUES SHOWN GOVERN OVER ENGLISH CONVERSION VALUESo


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    SD-5558-002 EN-02JA1021) ma 5558 MOLEX 5558 T PDF

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor PDF

    SY 360 05

    Abstract: BT2222A 2n22 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 SY 360 05 BT2222A 2n22 PDF

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


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    2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 * 00 NOTES oO * * CO lo * Li~> LD Q 0.2 0008 (CUT OFF TAB LENGTH) ( 1=9) -„075 00 L 2„ 3„ 4„ A AP PL I C A B L E HOUSING ° 5559 S E R I E S MATES WITH TERMINAL ; 5556 S E R I E S (METRIC) VALUES SHOWN GOVERN OVER ENGLISH CONVERSION VALUESo GENERAL TOLERANCES OF ENGLISH CONVERSION VALUES s ±=008 INCH


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    SD-5558-002 EN-02JA1021) PDF

    Untitled

    Abstract: No abstract text available
    Text: ''-W . r s i l i p u i ^ l i s F -199-1 _ samTëc -1 2 5 -0 2 -S -D TFML-120-Q2-S-D E Materials: 1.27mm x 1.27mm} .050" Jf.050“ micro pitch Insulatcir M aterial: Black Liquid Crystal Polym ei Term inal Material: Phosphor B ronze Current Rating: 2A @ 8 0 “ C am bient


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    TFML-120-Q2-S-D 27ijm 1-800-SAM PDF

    NPN transistor 2n2222A

    Abstract: 2N2708 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max


    OCR Scan
    2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A BT2946 2N2946 BT3999 NPN transistor 2n2222A 2N2708 2N2219 2N2219A 2N2220 PDF

    equivalent transistor 2N1711

    Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


    OCR Scan
    2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSH4N80AS Advanced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology dss = ^D S o n = ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 jjA (Max.) @ VDS = 800V


    OCR Scan
    SSH4N80AS PDF