AT90SC
Abstract: AT90SC9618RCT
Text: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2
|
Original
|
384-byte
64-byte
6512AS
28Feb05
AT90SC
AT90SC9618RCT
|
PDF
|
a96 laser diode
Abstract: a96 laser a96 "laser diode"
Text: Si8419DB New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ)
|
Original
|
Si8419DB
s-50341â
28-Feb-05
a96 laser diode
a96 laser
a96 "laser diode"
|
PDF
|
SC-75
Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated
|
Original
|
Si1012R/X
SC-75A
SC-89
Si1012R-Ted
08-Apr-05
SC-75
SC-89
Si1012R-T1
Si1012X-T1
|
PDF
|
64184
Abstract: No abstract text available
Text: MKT 304 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Partly Lacquered Type APPLICATIONS Blocking, coupling and decoupling. Bypass and energy reservoir w max l max 168x12 halfpage (h'max ) MARKING C-value; rated voltage; tolerance
|
Original
|
168x12
28-Feb-05
64184
|
PDF
|
LT 220
Abstract: No abstract text available
Text: MKP 479 Vishay BCcomponents AC and Pulse Polypropylene Film Capacitors MKP Radial Epoxy Lacquered Type APPLICATIONS Low losses due to low contact resistance and low loss dielectric result in applications where high currents at high frequency occur or high stability is preferred. Typical for
|
Original
|
168x12
28-Feb-05
LT 220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MKT 373 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Potted Type APPLICATIONS 168x12 halfpage Blocking and coupling. Bypass and energy reservoir w l MARKING C-value; tolerance; rated voltage; code for manufacturer; manufacturer’s type designation; code for dielectric material;
|
Original
|
168x12
28-Feb-05
|
PDF
|
1.5 MKT 400V
Abstract: 28106
Text: MKT 468 MKT/MKT 468 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Lacquered Type APPLICATIONS Blocking and coupling. Bypass and energy reservoir 168x12 halfpage l MARKING C-value; tolerance; rated voltage; code for manufacturer;
|
Original
|
168x12
28-Feb-05
1.5 MKT 400V
28106
|
PDF
|
TSOP34838YA1
Abstract: TSOP34836YA1 82257 TSAL6200 TSOP348
Text: TSOP348.YA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.YA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP348.
D-74025
28-Feb-05
TSOP34838YA1
TSOP34836YA1
82257
TSAL6200
TSOP348
|
PDF
|
TSAL6200
Abstract: TSOP348
Text: TSOP348.XG1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.XG1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP348.
D-74025
28-Feb-05
TSAL6200
TSOP348
|
PDF
|
Si1419DH
Abstract: No abstract text available
Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance
|
Original
|
Si1419DH
SC-70
OT-363
Si1419DH-T1--E3
08-Apr-05
|
PDF
|
TSOP34836RF1
Abstract: TSAL6200 TSOP348 TSOP34830RF1 TSOP34833RF1 TSOP34837RF1
Text: TSOP348.RF1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.RF1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP348.
D-74025
28-Feb-05
TSOP34836RF1
TSAL6200
TSOP348
TSOP34830RF1
TSOP34833RF1
TSOP34837RF1
|
PDF
|
Si5935DC
Abstract: Si5935DC-T1
Text: Si5935DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.086 @ VGS = −4.5 V −4.1 0.121 @ VGS = −2.5 V −3.4 0.171 @ VGS = −1.8 V −2.9 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent
|
Original
|
Si5935DC
Si5935DC-T1
Si5935DC-T1--E3
08-Apr-05
|
PDF
|
TSOP34836RF1
Abstract: No abstract text available
Text: TSOP348.RF1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.RF1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP348.
08-Apr-05
TSOP34836RF1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSOP341.UH1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341.UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP341.
08-Apr-05
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TSOP348.SX1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.SX1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP348.
08-Apr-05
|
PDF
|
TSOP34836SB1
Abstract: No abstract text available
Text: TSOP348.SB1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP348.SB1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
|
Original
|
TSOP348.
08-Apr-05
TSOP34836SB1
|
PDF
|
Si1905DL
Abstract: si1095
Text: SPICE Device Model Si1095DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si1095DL
S-50232Rev.
28-Feb-05
Si1905DL
si1095
|
PDF
|
71055
Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free
|
Original
|
Si5441DC
Si5441DC-T1--E3
S-50366--Rev.
28-Feb-05
71055
MAX 71055
D 71055
Si5441DC-T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch
|
Original
|
Si4410BDY
Si4410BDY--T1
Si4410BDY--E3
Si4410BDY-T1--E3
18-Jul-08
|
PDF
|
capacitor mkt 100nf 400v
Abstract: 05564 capacitor 100nf 100v polyester 10nF MKT Polyester capacitor capacitor 100nf 250v polyester vishay MKT 250V capacitor 1.5 MKT 400V 1/10 capacitor polyester mkt 400v vishay mkt capacitor ac mkt 100nf 400v
Text: MKT 467 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Lacquered Type APPLICATIONS 168x12 halfpage Blocking and coupling. Bypass and energy reservoir w l MARKING C-value; tolerance; rated voltage; code for manufacturer; manufacturer’s type designation; manufacturer’s symbol
|
Original
|
168x12
28-Feb-05
capacitor mkt 100nf 400v
05564
capacitor 100nf 100v polyester
10nF MKT Polyester capacitor
capacitor 100nf 250v polyester
vishay MKT 250V
capacitor 1.5 MKT 400V 1/10
capacitor polyester mkt 400v
vishay mkt
capacitor ac mkt 100nf 400v
|
PDF
|
Si1431DH
Abstract: 72707
Text: SPICE Device Model Si1431DH Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si1431DH
18-Jul-08
72707
|
PDF
|
Tyco 567
Abstract: LR7189
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — »— LOC ALL RIGHTS RESERVED. REVISIONS DIST G 14 LTR DESCRIPTION OWN DATE REV PER 0 G 3 A —0 0 3 5 —0 5 APVD JR MJS 28FEB05 D D U WIRE RANGE
|
OCR Scan
|
62mm2
31MAR2000
Tyco 567
LR7189
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST REVISIONS 00 LTR AD DESCRIPTION DWN DATE EC 0G3C 0838 04 APVD BSV JLG 28FEB05 POINT OF MEASUREMENT FOR PLATING THICKNESS
|
OCR Scan
|
28FEB05
|
PDF
|
PM582
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC GP RESERVED. REV I S I O N S D I ST 00 LTR DE S C R I P T I O N DATE D WN APVD SEE SHEET c C T H I S DRAWING I S a C ONT R OL L ED DOCUMENT FOR T l C O E L E C T R O N I C S C O RP ORA TI ON
|
OCR Scan
|
28FEB05
MAR200Ü
PM582
|
PDF
|